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Toshiba Semiconductor and Storage(13104)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Type Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Termination Max Operating Temperature Min Operating Temperature Technology Operating Mode RoHS Status Published Datasheet Current Rating Package / Case Capacitance Input Current Lead Free Number of Terminations Factory Lead Time Weight Approval Agency REACH SVHC Resistance Number of Pins Pbfree Code ECCN Code Contact Plating Radiation Hardening Reach Compliance Code Capacitance @ Frequency Applications Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Supply Voltage Operating Temperature (Max) Number of Channels Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Response Time Number of Elements Subcategory Supplier Device Package Input Capacitance Max Output Current Output Voltage Forward Current Max Input Current Turn On Delay Time Optoelectronic Device Type Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Zener Voltage Transistor Element Material Configuration Case Connection Transistor Application Drain to Source Voltage (Vdss) Propagation Delay Breakdown Voltage Voltage - Isolation Power Dissipation-Max Power Line Protection Voltage - Breakdown (Min) Current - Peak Pulse (10/1000μs) Voltage - Clamping (Max) @ Ipp Voltage - Reverse Standoff (Typ) Unidirectional Channels Clamping Voltage Peak Pulse Current Reverse Standoff Voltage Direction Number of Unidirectional Channels Power - Peak Pulse Bidirectional Channels Reference Voltage Voltage Tol-Max Working Test Current Voltage Tolerance Dynamic Impedance-Max Voltage - Forward (Vf) (Typ) Current - Output High, Low Rise / Fall Time (Typ) Current - DC Forward (If) (Max) Propagation Delay tpLH / tpHL (Max) Common Mode Transient Immunity (Min) Voltage - Output Supply Current - Peak Output Reverse Voltage (DC) Pulse Width Distortion (PWD) Output Current per Channel Pulsed Drain Current-Max (IDM) Drain to Source Resistance Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Rds On Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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TLP351(F) TLP351(F) Toshiba Semiconductor and Storage
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