| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Approval Agency | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Capacitance @ Frequency | Applications | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Response Time | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Memory Size | Max Input Current | Turn On Delay Time | Optoelectronic Device Type | Forward Current-Max | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Working Voltage | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Voltage - Isolation | Power - Max | Diode Element Material | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Direction | Bidirectional Channels | Number of Bidirectional Channels | Reference Voltage | Voltage Tol-Max | Working Test Current | Dynamic Impedance-Max | Voltage - Forward (Vf) (Typ) | Current - Output High, Low | Current - DC Forward (If) (Max) | Propagation Delay tpLH / tpHL (Max) | Common Mode Transient Immunity (Min) | Voltage - Output Supply | Current - Peak Output | Reverse Voltage (DC) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| HDEPV21GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG06ACA | 5°C~55°C | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 8TB | 3.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N44FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | YES | GULL WING | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 200mW Ta | 0.1A | 7Ohm | 2 N-Channel (Dual) | 8.5pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002BFE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 1.6mm | 550μm | 1.2mm | 16 Weeks | 150mW | 2 | 200mA | 10V | 60V | 60V | 2 N-Channel (Dual) | 17pF @ 25V | 2.1 Ω @ 500mA, 10V | 3.1V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-ssm6n7002kfulf-datasheets-7489.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | yes | AEC-Q101 | 285mW | GULL WING | 2 | R-PDSO-G6 | 300mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 285mW | 0.3A | 1.75Ohm | 2 N-Channel (Dual) | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPHR6503PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | 175°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 1mm | 12 Weeks | 8 | 1 | 960mW | 175°C | 8-SOP Advance (5x5) | 10nF | 36 ns | 100 ns | 150A | 20V | 30V | 1.1V | 960mW Ta 170W Tc | 410μOhm | 30V | N-Channel | 10000pF @ 15V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 150A Tc | 110nC @ 10V | 650 μΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K333R,LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 3 | 16 Weeks | unknown | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1W | 1 | R-PDSO-F3 | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 6A | 0.028Ohm | 30V | N-Channel | 436pF @ 15V | 28m Ω @ 5A, 10V | 2.5V @ 100μA | 6A Ta | 3.4nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J15FU,LF | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-70, SOT-323 | 12 Weeks | unknown | 100mA | 30V | 150mW Ta | P-Channel | 9.1pF @ 3V | 12 Ω @ 10mA, 4V | 1.7V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S30FS,L3M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s30fsl3m-datasheets-2654.pdf | SOD-923 | 12 Weeks | EAR99 | 7pF @ 1MHz | General Purpose | No | 28V | 23V Max | 1 | 23V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N48FU,LF | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | 6 | No | GULL WING | 2 | 2 | 35 ns | 180 ns | 100mA | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 300mW | 0.1A | 5.4Ohm | 2 N-Channel (Dual) | 15.1pF @ 3V | 3.2 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5A5.6CJE,LM | Toshiba Semiconductor and Storage | $0.27 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5a56cjelm-datasheets-4312.pdf | SOT-553 | 12 Weeks | EAR99 | 29pF @ 1MHz | General Purpose | No | 5.3V | 4 | 3.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8401(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2006 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 20V 12V | 1W | N and P-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA 5.5A | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S8.2FS,L3M | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s82fsl3m-datasheets-8306.pdf | SOD-923 | 2 | 12 Weeks | EAR99 | 20pF @ 1MHz | General Purpose | UNIDIRECTIONAL | YES | DUAL | FLAT | 1 | R-PDSO-F2 | SINGLE | SILICON | No | 7.7V | 6.5V Max | 1 | 8.2V | 6.09% | 5mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N48FU,RF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | unknown | 300mW | GULL WING | 300mW | 2 | R-PDSO-G6 | 100mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 5.4Ohm | 30V | 2 N-Channel (Dual) | 15.1pF @ 3V | 3.2 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF3A3.3FV,L3F | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a33fvl3f-datasheets-5710.pdf | SOT-723 | 12 Weeks | 115pF @ 1MHz | General Purpose | No | 3.1V | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK9J90E,S1E | Toshiba Semiconductor and Storage | $2.36 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-3P-3, SC-65-3 | 16 Weeks | 6.961991g | 1 | Single | TO-3P(N) | 2nF | 80 ns | 40ns | 35 ns | 140 ns | 9A | 30V | 900V | 250W Tc | 1Ohm | 900V | N-Channel | 2000pF @ 25V | 1.3Ohm @ 4.5A, 10V | 4V @ 900μA | 9A Ta | 46nC @ 10V | 1.3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF3A5.6FV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a56fvl3f-datasheets-4503.pdf | SOT-723 | 12 Weeks | 65pF @ 1MHz | General Purpose | No | 5.3V | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J355R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | 6A | 0.0388Ohm | P-Channel | 1030pF @ 10V | 30.1m Ω @ 4A, 4.5V | 1V @ 1mA | 6A Ta | 16.6nC @ 4.5V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5A6.8JE,LM | Toshiba Semiconductor and Storage | $0.24 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5a68jelm-datasheets-5648.pdf | SOT-553 | 12 Weeks | 45pF @ 1MHz | General Purpose | No | 6.4V | 5V | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPWR6003PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 16 Weeks | 30V | 960mW Ta 170W Tc | N-Channel | 10000pF @ 15V | 600μ Ω @ 50A, 10V | 2.1V @ 1mA | 150A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5A6.2CFU(TE85L,F | Toshiba Semiconductor and Storage | $0.37 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5a62cfute85lf-datasheets-7028.pdf | 5-TSSOP, SC-70-5, SOT-353 | 12 Weeks | EAR99 | 25pF @ 1MHz | General Purpose | 150°C | 4 | Voltage Reference Diodes | 0.2W | No | 5.8V | 4 | 5V | 6.2V | 5mA | 30Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK49N65W,S1F | Toshiba Semiconductor and Storage | $9.27 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | RoHS Compliant | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S24UCT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s24uctl3f-datasheets-9179.pdf | SOD-882 | 12 Weeks | 1.6pF @ 1MHz | General Purpose | No | 22V | 19V Max | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J15CT(TPL3) | Toshiba Semiconductor and Storage | $0.57 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SC-101, SOT-883 | 12 Weeks | 3 | unknown | 1 | Single | 100W | Other Transistors | 65 ns | 175 ns | 100mA | -1.7V | 30V | 100mW Ta | -30V | P-Channel | 9.1pF @ 3V | 12 Ω @ 10mA, 4V | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2B12M2SC,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b12m2scl3f-datasheets-9905.pdf | 0201 (0603 Metric) | 400FF | 10 Weeks | 2 | 0.2pF @ 1MHz | General Purpose | Single | SC2 | 8V | No | 10V | 1A 8/20μs | 18V Typ | 8V Max | 18V | 1A | 8V | Bidirectional | 1 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J422TU,LF | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 1W Ta | P-Channel | 840pF @ 10V | 42.7m Ω @ 3A, 4.5V | 1V @ 1mA | 4A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | +6V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP251(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -20°C~85°C | Tube | 1 (Unlimited) | Optical Coupling | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp251f-datasheets-9770.pdf | 8-DIP (0.300, 7.62mm) | 9.66mm | 3.65mm | 6.4mm | Lead Free | 20 Weeks | UR | 8 | UL RECOGNIZED | No | 1 | 1 | 400mA | 10mA | 1 μs | LOGIC IC OUTPUT OPTOCOUPLER | 1μs | 1 μs | SINGLE | 1 μs | 2500Vrms | Unidirectional | 1.6V | 100mA 100mA | 20mA | 1μs, 1μs | 5kV/μs | 10V~30V | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J401TU,LF | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | P-Channel | 730pF @ 15V | 73m Ω @ 2A, 10V | 2.6V @ 1mA | 2.5A Ta | 16nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP705(D4,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~100°C | 1 (Unlimited) | Optical Coupling | RoHS Compliant | 6-SOIC (0.268, 6.80mm Width) | CSA, cUR, UR, VDE | YES | 20V | 1 | 2e-7 ns | 1 | Optocoupler - IC Outputs | 0.02A | 5000Vrms | 1.6V | 300mA 300mA | 20mA | 200ns, 200ns | 10kV/μs | 10V~20V | 450mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK39N60W5,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-247-3 | 16 Weeks | TO-247 | 4.1nF | 38.8A | 600V | 270W Tc | N-Channel | 4100pF @ 300V | 74mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 38.8A Ta | 135nC @ 10V | 74 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP523(SHRP-MA,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) |
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