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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Frequency | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Polarity | Case Code (Metric) | Case Code (Imperial) | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Application | Continuous Collector Current | Speed | Power - Output | Power - Max | Highest Frequency Band | Diode Element Material | Max Breakdown Voltage | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Current - Test | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | hFE Min | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Collector-Base Capacitance-Max | Noise Figure (dB Typ @ f) | Frequency - Transition | Voltage - Test | Number of Drivers/Receivers | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CRG07(TE85L,Q,M) | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 175°C | RoHS Compliant | 2008 | SOD-123F | 12 Weeks | No SVHC | 2 | Single | 700mA | 1.1V | Standard Recovery >500ns, > 200mA (Io) | 15A | 100V | Standard | 400V | 10μA @ 400V | 1.1V @ 700mA | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUS06(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 150°C | -40°C | RoHS Compliant | SC-76, SOD-323 | 12 Weeks | 2 | Single | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30mA | 20V | 20A | Schottky | 40pF @ 10V 1MHz | 30μA @ 20V | 450mV @ 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS14(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshiba-cms14te12lqm-datasheets-6769.pdf | SOD-128 | 12 Weeks | 2 | Silver, Tin | Single | 2A | 580mV | Fast Recovery =< 500ns, > 200mA (Io) | 40A | 200μA | 60V | 40A | Schottky | 60V | 2A | 200μA @ 60V | 580mV @ 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS08(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.42 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2009 | SOD-128 | 12 Weeks | 2 | Single | 25A | 380μA | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA | 30V | 25A | Schottky | 70pF @ 10V 1MHz | 1.5mA @ 30V | 370mV @ 3A | 1A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS10I40B(TE85L,QM | Toshiba Semiconductor and Storage | $0.04 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOD-123F | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 62pF @ 10V 1MHz | 40V | 100μA @ 40V | 450mV @ 1A | 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS01(TE12L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | Non-RoHS Compliant | 2005 | /files/toshibasemiconductorandstorage-cms01te12lqm-datasheets-1751.pdf | 30V | 3A | SOD-128 | 190pF | Contains Lead | 2 | no | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | Standard | DUAL | FLAT | NOT SPECIFIED | CMS01 | 2 | 125°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PDSO-F2 | 3A | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 30V | 3A | 40A | 1 | 5mA @ 30V | 370mV @ 3A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS02(T6L,CANO-O,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls02t6lclarq-datasheets-2716.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 420pF @ 10V 1MHz | 40V | 1mA @ 40V | 0.55V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS388(TL3,F,D) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-1ss388tl3fd-datasheets-2979.pdf | SC-79, SOD-523 | 2 | Single | 100mA | 1A | Small Signal =< 200mA (Io), Any Speed | 5μA | 45V | 1A | 40V | Schottky | 40V | 100mA | 18pF @ 0V 1MHz | 5μA @ 10V | 600mV @ 50mA | -40°C~100°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSF01S30SC(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-dsf01s30sctpl3-datasheets-2686.pdf | 2-SMD, No Lead | 620μm | 300μm | 320μm | Lead Free | 12 Weeks | 2 | No | 0603 | 0201 | DSF01S30 | Single | 100mA | 2A | 50μA | Small Signal =< 200mA (Io), Any Speed | 50μA | 30V | 2A | Schottky | 30V | 100mA | 9.3pF @ 0V 1MHz | 50μA @ 30V | 500mV @ 100mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5065-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | SC-70, SOT-323 | 16 Weeks | Copper, Silver, Tin | unknown | 100mW | Single | 12dB ~ 17dB | 100mW | 12V | 12V | 12V | 30mA | 20V | 3V | 80 | NPN | 120 @ 10mA 5V | 1.1dB @ 1GHz | 7GHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT4S300U(TE85L,O,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SC-82A, SOT-343 | 4 | 12 Weeks | LOW NOISE | YES | DUAL | GULL WING | 1 | 16.9dB | R-PDSO-G4 | SILICON GERMANIUM | SINGLE | AMPLIFIER | NPN | 250mW | KA B | 26500MHz | 4V | 50mA | NPN | 200 @ 10mA 3V | 0.27pF | 0.55dB @ 2GHz | 26.5GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3078A(TE12L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -45°C | 470MHz | RoHS Compliant | 2007 | 500mA | TO-243AA | 3 | EAR99 | unknown | 3W | 1 | 8dB | 500mA | 5V | 10V | 28dbm | 50mA | N-Channel | 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4215-O(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | SC-70, SOT-323 | 14 Weeks | YES | Other Transistors | 23dB | Single | NPN | 0.1W | 100mW | 260MHz | 30V | 20mA | NPN | 40 @ 1mA 6V | 5dB @ 100MHz | 550MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TD62083APG,N | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Through Hole | Through Hole | -40°C~85°C | Tube | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 2009 | 18-DIP (0.300, 7.62mm) | 5V | TD6208*A | 18-DIP | 8/0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TD62783AFNG,S,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Surface Mount | -40°C~85°C | Tube | 1 (Unlimited) | RoHS Compliant | 2009 | 18-LSSOP (0.173, 4.40mm Width) | 5V | 8/0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FYTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | SC-74, SOT-457 | 12 Weeks | NPN | 300mW | Dual | 80MHz | 300mW | 50V | 50V | 100mV | 250mV | 150mA | 60V | 5V | 120 | 100nA ICBO | 2 NPN (Dual) | 120 @ 2mA 6V | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 100MHz | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-hn3c51fgrte85lf-datasheets-4306.pdf | SC-74, SOT-457 | 6 | NPN | 300mW | Dual | 300mW | 2 | 100MHz | 120V | 120V | 300mV | 300mV | 100mA | 120V | 5V | 200 | 100nA ICBO | 2 NPN (Dual) | 200 @ 2mA 6V | 300mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | SC-74, SOT-457 | 4 Weeks | 6 | No | NPN | 300mW | Dual | 80MHz | 300mW | 50V | 50V | 100mV | 250mV | 150mA | 60V | 5V | 120 | 100nA ICBO | 2 NPN (Dual) | 120 @ 2mA 6V | 800MHz | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4738-GR,LF | Toshiba Semiconductor and Storage | $0.17 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-75, SOT-416 | 900μm | 12 Weeks | 3 | Silver, Tin | unknown | 100mW | 100mW | 1 | 125°C | 80MHz | 50V | 50V | 100mV | 50V | 150mA | 60V | 5V | 200 | 100nA ICBO | NPN | 200 @ 2mA 6V | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1955FVBTPL3Z | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2005 | /files/toshibasemiconductorandstorage-2sa1955fvatpl3z-datasheets-4505.pdf | SOT-723 | PNP | 100mW | Single | VESM | 100mW | 12V | 12V | -30mV | 250mV | 400mA | 12V | 400mA | 300 | 100nA ICBO | PNP | 300 @ 10mA 2V | 130MHz | 250mV @ 10mA, 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2713-BL,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | yes | 150mW | 150mW | 120V | 120V | 300mV | 100mA | 100nA ICBO | NPN | 350 @ 2mA 6V | 100MHz | 300mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2713-GR,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 150mW | 150mW | 120V | 120V | 300mV | 100mA | 120V | 5V | 100nA ICBO | NPN | 200 @ 2mA 6V | 100MHz | 300mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1182-Y,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 150mW | 200MHz | -500mA | 150mW | 30V | 30V | -250mV | 250mV | 500mA | -35V | -5V | 25 | 100nA ICBO | PNP | 120 @ 100mA 1V | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5359-O(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | Not Applicable | 30MHz | RoHS Compliant | 2007 | /files/toshiba-2sc5359oq-datasheets-4769.pdf&product=toshibasemiconductorandstorage-2sc5359oq-6311450 | TO-3PL | 20.5mm | 26mm | 5.2mm | Lead Free | 14 Weeks | 3 | EAR99 | No | 180W | Single | 180W | 1 | Other Transistors | 30MHz | NPN | 230V | 3V | 230V | 15A | 230V | 5V | 80 | 5μA ICBO | NPN | 80 @ 1A 5V | 3V @ 800mA, 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1162S-Y, LF(D | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2014 | TO-236-3, SC-59, SOT-23-3 | 3 | LOW NOISE | unknown | YES | DUAL | GULL WING | 2SA1162 | 1 | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | PNP | 150mW | 80MHz | 50V | 150mA | 100nA ICBO | PNP | 120 @ 2mA 6V | 80MHz | 300mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6FJT,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1930,LBS2DIAQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | /files/toshibasemiconductorandstorage-2sa1930qj-datasheets-1011.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 180V | 2A | 5μA ICBO | PNP | 100 @ 100mA 5V | 200MHz | 1V @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1869-Y,MTSAQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1869yqj-datasheets-1014.pdf | TO-220-3 Full Pack | TO-220NIS | 10W | 50V | 3A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 600mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1869-Y(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1869yqj-datasheets-1014.pdf | TO-220-3 Full Pack | TO-220NIS | 10W | 50V | 3A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 600mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1837,HFEYHF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1837fm-datasheets-6654.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | PNP | 100 @ 100mA 5V | 70MHz | 1.5V @ 50mA, 500mA |
