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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | Number of Ports | ECCN Code | Radiation Hardening | Reach Compliance Code | Number of Functions | Capacitance @ Frequency | Applications | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Output Polarity | Qualification Status | JESD-30 Code | Family | Logic IC Type | Supplier Device Package | Input Capacitance | Memory Size | Number of Bits | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Neg Supply Voltage-Nom (Vsup) | FET Technology | Power - Max | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Output Characteristics | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Propagation Delay (tpd) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SA1931,BOSCHQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1931sinfqj-datasheets-1023.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 50V | 5A | 1μA ICBO | PNP | 100 @ 1A 1V | 60MHz | 400mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA949-Y(JVC1,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa949yte6fm-datasheets-1022.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | PNP | 70 @ 10mA 5V | 120MHz | 800mV @ 1mA, 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC1627A-O,PASF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc1627aopasfm-datasheets-1093.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 80V | 400mA | 100nA ICBO | NPN | 70 @ 50mA 2V | 100MHz | 400mV @ 20mA, 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1761,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1761fj-datasheets-0998.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 3A | 100nA ICBO | PNP | 120 @ 100mA 2V | 100MHz | 500mV @ 75mA, 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y(T6OMI,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1931,Q(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-2sa1931sinfqj-datasheets-1023.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 50V | 5A | 1μA ICBO | PNP | 100 @ 1A 1V | 60MHz | 400mV @ 200mA, 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y,T6KEHF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2655-Y,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | /files/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4604,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4604fj-datasheets-1200.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 3A | 100nA ICBO | NPN | 120 @ 100mA 2V | 100MHz | 500mV @ 75mA, 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5201,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5201t6murafj-datasheets-1204.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 600V | 50mA | 1μA ICBO | NPN | 100 @ 20mA 5V | 1V @ 500mA, 20mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5171(LBS2MATQ,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5171qj-datasheets-1207.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 180V | 2A | 5μA ICBO | NPN | 100 @ 100mA 5V | 200MHz | 1V @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6139,T2F(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc6139t2fm-datasheets-1431.pdf | SC-71 | 1W | 160V | 1.5A | 100nA ICBO | NPN | 140 @ 100mA 5V | 100MHz | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1242-Y(Q) | Toshiba Semiconductor and Storage | $1.77 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tube | 1 (Unlimited) | 150°C | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-2sa1242yq-datasheets-0300.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | PNP | 1W | Single | PW-MOLD | 170MHz | 1W | 20V | 1V | 5A | 20V | 5A | 35V | 8V | 160 | 100nA ICBO | PNP | 160 @ 500mA 2V | 170MHz | 1V @ 100mA, 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC74HC4053AFTEL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Cut Tape (CT) | 1 (Unlimited) | CMOS | RoHS Compliant | 2014 | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 4.4mm | 16 | 5 Weeks | 1 | YES | DUAL | GULL WING | 4.5V | 0.65mm | 74HC4053 | 2 | DPDT | Multiplexer or Switches | Not Qualified | R-PDSO-G16 | -4.5V | 100Ohm | 50 dB | 5Ohm | BREAK-BEFORE-MAKE | 2V~6V ±2V~6V | 3:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2695,T6F(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2695t6canoaf-datasheets-6746.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 60V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC7WBL3306CFK(5L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.9mm | RoHS Compliant | 2014 | 8-VFSOP (0.091, 2.30mm Width) | 8 | 10 Weeks | 8 | yes | 2 | unknown | 2 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 0.5mm | 8 | 3.6V | 2 | NOT SPECIFIED | TRUE | CBT/FST/QS/5C/B | BUS DRIVER | 1 | 3-STATE | 19Ohm | 10 ns | 1.65V~3.6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPW11GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG07ACA | 5°C~55°C | 147.00mmx101.85mmx26.10mm | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 12TB | 3.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N16FE,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 150mW Ta | 2 N-Channel (Dual) | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L35FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 16 Weeks | unknown | 150mW | SSM6L35 | 100mA | 20V | N and P-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA 100mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N15AFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | unknown | 300mW | GULL WING | 300mW | 2 | R-PDSO-G6 | 100mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 6Ohm | 30V | 2 N-Channel (Dual) | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K36MFV,L3F | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-723 | 12 Weeks | 3 | No | 30 ns | 75 ns | 500mA | 10V | 20V | 150mW Ta | N-Channel | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | 1.5V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K217FE,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 6 | ES6 | 130pF | 13 ns | 8 ns | 1.8A | 12V | 40V | 500mW Ta | N-Channel | 130pF @ 10V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.8A Ta | 1.1nC @ 4.2V | 195 mΩ | 1.8V 8V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K17FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-70, SOT-323 | 12 Weeks | unknown | 100mA | 50V | 150mW Ta | N-Channel | 7pF @ 3V | 20 Ω @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 2.5V 4V | ±7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S24FS,L3M | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s24fsl3m-datasheets-2792.pdf | SOD-923 | 12 Weeks | EAR99 | 8.5pF @ 1MHz | General Purpose | No | 22.8V | 19V Max | 1 | 19V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N36FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 16 Weeks | unknown | 150mW | SSM6N36 | 500mA | 20V | 150mW | 2 N-Channel (Dual) | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF3A3.6FV(TPL3,Z) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a36fvtpl3z-datasheets-4339.pdf | SOT-723 | 12 Weeks | 110pF @ 1MHz | General Purpose | No | 3.4V | 2 | 1.8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8405(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 750mW | Dual | 750mW | 2 | 8-SOP (5.5x6.0) | 1.24nF | 35 ns | 4.5A | 20V | 30V | 450mW | 42mOhm | -30V | N and P-Channel | 1240pF @ 10V | 26mOhm @ 3A, 10V | 2V @ 1mA | 6A 4.5A | 27nC @ 10V | Logic Level Gate | 26 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S6.8ASL,L3F | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s68asll3f-datasheets-2785.pdf | 0201 (0603 Metric) | 12 Weeks | 25pF @ 1MHz | General Purpose | No | 6.4V | 5V Max | 1 | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L11TU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-SMD, Flat Leads | 6 | unknown | 500mW | 2 | Dual | Other Transistors | 16 ns | 15 ns | 500mA | -1.1V | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.5A | N and P-Channel | 268pF @ 10V | 145m Ω @ 250MA, 4V | 1.1V @ 100μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF3D6.8MS,LF | Toshiba Semiconductor and Storage | $0.03 |
Min: 1 Mult: 1 |
download | Steering (Rail to Rail) | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3d68mslf-datasheets-5818.pdf | SC-75, SOT-416 | 8 Weeks | 0.5pF @ 1MHz | General Purpose | Yes | 6V | 1A 8/20μs | 11V Typ | 5V Max | 2 | 11V | 1A | 5V |
