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ContactGeneSiC Semiconductor(3996)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Contact Resistance | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | RMS Current (Irms) | Max Surge Current | Continuous Drain Current (ID) | Max Reverse Leakage Current | Configuration | Case Connection | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Off State | Capacitance @ Vr, F | Voltage - Peak Reverse (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Structure | Number of SCRs, Diodes | Current - Average Rectified (Io) | Operating Temperature - Junction | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
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| MBRH120200R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh120200r-datasheets-4792.pdf | D-67 | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | Schottky | 200V | 120A | 2000A | 1 | 200V | 1mA @ 200V | 920mV @ 120A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20040 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20040-datasheets-4850.pdf | D-67 | 1 | 6 Weeks | 67 | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | UNSPECIFIED | 1 | R-PUFM-X1 | 200A | 3kA | 1μA | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky | 40V | 200A | 1 | 5mA @ 20V | 650mV @ 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH24060 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | 240A | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 60V | Schottky | 60V | 240A | 1 | 1mA @ 60V | 780mV @ 240A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7580R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 880mV | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1kA | 1μA | 80V | Schottky, Reverse Polarity | 80V | 75A | 1 | 1mA @ 80V | 840mV @ 75A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR8030R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 80A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky, Reverse Polarity | 30V | 80A | 1 | 1mA @ 30V | 750mV @ 80A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GKN26/04 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-gkn2616-datasheets-1131.pdf | DO-203AA, DO-4, Stud | 10 Weeks | EAR99 | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | SINGLE | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 25A | 375A | 400V | 4mA @ 400V | 1.55V @ 60A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GB01SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | TO-220-2 | 18 Weeks | No SVHC | 2 | EAR99 | 42W | NOT SPECIFIED | GB01SLT12 | Single | NOT SPECIFIED | 1A | 10A | 4μA | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 17 ns | Silicon Carbide Schottky | 1.2kV | 1A | 69pF @ 1V 1MHz | 1200V | 2μA @ 1200V | 1.8V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20030L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20030l-datasheets-2857.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 30V | 200A | 3000A | 1 | 30V | 3mA @ 30V | 580mV @ 200A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20020RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20020rl-datasheets-3060.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky, Reverse Polarity | 20V | 200A | 3000A | 1 | 20V | 3mA @ 20V | 580mV @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7635-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | TO-257-3 | 18 Weeks | Unknown | 3 | EAR99 | Other Transistors | 4A | N-CHANNEL | 650V | 47W Tc | 324pF @ 35V | 415m Ω @ 4A | 4A Tc 165°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ25D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Yes with exemptions | /files/genesicsemiconductor-gbj25d-datasheets-1422.pdf | 4 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA080TH65-227SP | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-ga080th65227sp-datasheets-4111.pdf | Module | 18 Weeks | 139A | 6.5kV | 100mA | 80A | Single | 1 SCR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC3504W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2017 | 4-Square, GBPC-W | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | UL RECOGNIZED | unknown | UPPER | WIRE | 4 | Not Qualified | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 0.000005μA | Single Phase | 400A | 1 | 35A | 400V | 5μA @ 400V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU8G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 31 | Right Angle | 80mOhm | GBU | 600μm | 8A | 200A | 5μA | 5A | 400V | Single Phase | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBP202G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2006 | /files/genesicsemiconductor-kbp202g-datasheets-2789.pdf | 4-SIP, KBP | 4 Weeks | 4 | PRODUCTION (Last Updated: 5 months ago) | KBP | Single Phase | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBP202 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Cable | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbp204-datasheets-0360.pdf | 4-SIP, KBP | 4 Weeks | 30 | Straight | KBP | 2mm | 2A | 60A | 10μA | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 11 | Right Angle | 80mOhm | GBU | 600μm | 6A | 175A | 5μA | 5A | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL604G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2014 | 4-SIP, KBL | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | NO | WIRE | 4 | R-PSIP-W4 | 6A | 180A | 5μA | BRIDGE, 4 ELEMENTS | SILICON | 5A | 400V | Single Phase | 1 | 6A | 400V | 5μA @ 400V | 1.1V @ 6A |
