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ContactGeneSiC Semiconductor(3996)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | Contact Resistance | Polarity | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Turn On Delay Time | RMS Current (Irms) | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Max Reverse Leakage Current | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Off State | Voltage - Peak Reverse (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Structure | Number of SCRs, Diodes | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRH20040RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20040rl-datasheets-2948.pdf | D-67 HALF-PAK | 1 | EAR99 | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky, Reverse Polarity | 40V | 200A | 3000A | 1 | 40V | 5mA @ 40V | 600mV @ 200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA04JT17-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | /files/genesicsemiconductor-ga04jt17247-datasheets-6136.pdf | TO-247-3 | 25.934mm | 18 Weeks | No SVHC | 3 | EAR99 | NPN | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 106W | 10 ns | 28ns | 50 ns | 19 ns | 15A | 1700V | 106W Tc | 480m Ω @ 4A | 4A Tc 95°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA05JT03-46 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga05jt0346-datasheets-4010.pdf | TO-46-3 | 18 Weeks | 3 | 9A | 300V | 20W Tc | 240m Ω @ 5A | 9A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA080TH65-227SP | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-ga080th65227sp-datasheets-4111.pdf | Module | 18 Weeks | 139A | 6.5kV | 100mA | 80A | Single | 1 SCR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC3504W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2017 | 4-Square, GBPC-W | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | UL RECOGNIZED | unknown | UPPER | WIRE | 4 | Not Qualified | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 0.000005μA | Single Phase | 400A | 1 | 35A | 400V | 5μA @ 400V | 1.1V @ 17.5A | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU8G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 31 | Right Angle | 80mOhm | GBU | 600μm | 8A | 200A | 5μA | 5A | 400V | Single Phase | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBP202G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2006 | /files/genesicsemiconductor-kbp202g-datasheets-2789.pdf | 4-SIP, KBP | 4 Weeks | 4 | PRODUCTION (Last Updated: 5 months ago) | KBP | Single Phase | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBP202 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Cable | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbp204-datasheets-0360.pdf | 4-SIP, KBP | 4 Weeks | 30 | Straight | KBP | 2mm | 2A | 60A | 10μA | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 11 | Right Angle | 80mOhm | GBU | 600μm | 6A | 175A | 5μA | 5A | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL604G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2014 | 4-SIP, KBL | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | NO | WIRE | 4 | R-PSIP-W4 | 6A | 180A | 5μA | BRIDGE, 4 ELEMENTS | SILICON | 5A | 400V | Single Phase | 1 | 6A | 400V | 5μA @ 400V | 1.1V @ 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU15G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 15A | 240A | 5μA | 5A | 400V | Single Phase | 400V | 5μA @ 400V | 1.1V @ 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR610 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-6 | 4 Weeks | 6 | PRODUCTION (Last Updated: 5 months ago) | 6A | 125A | 10μA | 10A | 1kV | Single Phase | 1kV | 10μA @ 1000V | 1V @ 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ25005G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 39 | Right Angle | 5.05kV | 4 | Bridge Rectifier Diodes | 600μm | 25A | 350A | 5μA | BRIDGE, 4 ELEMENTS | 5A | 50V | Single Phase | 50V | 10μA @ 50V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC50005T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | /files/genesicsemiconductor-gbpc50005t-datasheets-3365.pdf | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 400A | 50A | 50V | 5μA @ 50V | 1.2V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC25010T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, KBPC-T | 28.8mm | 25.4mm | 28.8mm | 4 Weeks | 350A | 5μA | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 12.5A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC1501W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, GBPC-W | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | GBPC-W | Single Phase | 100V | 5μA @ 100V | 1.1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC3502W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, KBPC-W | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | KBPC-W | Single Phase | 200V | 5μA @ 200V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC2502T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-gbpc2502t-datasheets-2521.pdf | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 300A | 25A | 200V | 5μA @ 200V | 1.1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC5004T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbpc5004t-datasheets-2550.pdf | 4-Square, KBPC-T | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 400A | 50A | 400V | 5μA @ 400V | 1.1V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC3508T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | /files/genesicsemiconductor-gbpc3508t-datasheets-2597.pdf | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | Single Phase | 800V | 5μA @ 800V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL403G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2017 | /files/genesicsemiconductor-kbl403g-datasheets-0726.pdf | 4-SIP, KBL | 4 Weeks | 4A | 120A | 5μA | 5A | 200V | Single Phase | 200V | 5μA @ 200V | 1.1V @ 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W08M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | 125°C | -65°C | Standard | RoHS Compliant | 2008 | /files/genesicsemiconductor-w10m-datasheets-0746.pdf | 4-Circular, WOM | 7 Weeks | 4 | WOM | 1.5A | 50A | 10μA | 10A | 800V | Single Phase | 800V | 5μA @ 800V | 1V @ 1A | 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M3P100A-160 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 5-SMD Module | 18 Weeks | 6 | Bridge Rectifier Diodes | 100A | 1.2kA | BRIDGE, 6 ELEMENTS | 10μA | 1.6kV | 1.6kV | Three Phase | 10mA @ 1600V | 1.15V @ 100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURT40040R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | 2012 | Three Tower | 3 | 6 Weeks | No SVHC | 3 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 2 | 200A | 1.35V | 3.3kA | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3.3kA | 25μA | 400V | 400V | 180 ns | Standard, Reverse Polarity | 400V | 400A | 1 | 25μA @ 50V | 1.35V @ 200A | 200A DC | -55°C~150°C | 1 Pair Common Anode | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRT12030 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2017 | /files/genesicsemiconductor-mbrt12030-datasheets-9741.pdf | Three Tower | 3 | 6 Weeks | PRODUCTION (Last Updated: 4 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 2 | R-PUFM-X3 | 120A | 800A | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky | 30V | 120A | 1 | 60A | 1mA @ 20V | 750mV @ 60A | 120A DC | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRT10080(A)D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | Three Tower | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 100A | 800V | 10μA @ 800V | 1.1V @ 100A | -55°C~150°C | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST120200 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-fst120200-datasheets-9794.pdf | TO-249AB | 3 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | SINGLE | SOLDER LUG | 150°C | Common Cathode | 2 | R-PSFM-D3 | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | Schottky | 200V | 60A | 1000A | 1 | 1mA @ 200V | 920mV @ 60A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST16080 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2010 | TO-249AB | 3 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | SINGLE | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-D3 | 160A | 1.2kA | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 80V | Schottky | 80V | 160A | 1 | 1mA @ 20V | 880mV @ 160A | 160A DC | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR500200CT | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-mbr500200ct-datasheets-9879.pdf | Twin Tower | 2 | 4 Weeks | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | Common Cathode | 2 | R-PUFM-X2 | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 200V | 250A | 3500A | 1 | 3mA @ 200V | 920mV @ 250A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR120100CTR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | 2010 | Twin Tower | 2 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 2 | R-PUFM-X2 | 120A | 800A | 1μA | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky | 100V | 120A | 1 | 60A | 3mA @ 20V | 840mV @ 60A | 120A DC | 1 Pair Common Cathode |
