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ContactGeneSiC Semiconductor(3996)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Gender | Number of Contacts | Orientation | ECCN Code | Additional Feature | Max Voltage Rating (DC) | HTS Code | Wire/Cable Gauge | Contact Resistance | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | RMS Current (Irms) | On-State Current-Max | Max Surge Current | Continuous Drain Current (ID) | Max Reverse Leakage Current | Configuration | Case Connection | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Application | Cable Length | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Trigger Device Type | Voltage - Off State | Repetitive Peak Off-state Voltage | Current - On State (It (RMS)) (Max) | Capacitance @ Vr, F | Voltage - Peak Reverse (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Circuit Commutated Turn-off Time-Nom | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Structure | Number of SCRs, Diodes | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB02SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | /files/genesicsemiconductor-gb02slt12220-datasheets-1160.pdf | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | PD-CASE | 8541.10.00.80 | 42W | NOT SPECIFIED | GB02SLT12 | Single | NOT SPECIFIED | 1 | 2A | 2.9V | 18A | 8μA | CATHODE | EFFICIENCY | 2.32 °C/W | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 17 ns | Silicon Carbide Schottky | 1.2kV | 2A | 1 | 2A | 138pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GAP05SLT80-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-gap05slt80220-datasheets-8611.pdf | Axial | 18 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 8kV | 50mA | 25pF @ 1V 1MHz | 8000V | 3.8μA @ 8000V | 4.6V @ 50mA | 50mA DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20040L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20040l-datasheets-2902.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 40V | 200A | 3000A | 1 | 40V | 5mA @ 40V | 600mV @ 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7636-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~225°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | TO-276AA | 18 Weeks | 3 | EAR99 | Other Transistors | 4A | N-CHANNEL | 650V | 125W Tc | 324pF @ 35V | 415m Ω @ 4A | 4A Tc 165°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA20JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 18 Weeks | 3 | YES | Other Transistors | 45A | N-CHANNEL | 1200V | 282W Tc | 3091pF @ 800V | 60m Ω @ 20A | 45A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA040TH65 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | /files/genesicsemiconductor-ga040th65-datasheets-4077.pdf | SOT-227-2 | 18 Weeks | No SVHC | 3 | EAR99 | Silicon Controlled Rectifiers | 69A | 40000A | 780mA | SCR | 6.5kV | 6500V | 69A | 30mA | 40A | 4.7 µs | Single | 1 SCR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC2508W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2016 | 4-Square, GBPC-W | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBPC-W | Single Phase | 800V | 5μA @ 800V | 1.1V @ 1.2A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBU | 6A | 175A | 5μA | 5A | 100V | Single Phase | 100V | 5μA @ 100V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB106G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-EDIP (0.321, 8.15mm) | 4 | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | NO | DUAL | NOT SPECIFIED | NOT SPECIFIED | 4 | 1A | 30A | 5μA | SILICON | 5A | 800V | Single Phase | 1 | 1A | 800V | 10μA @ 800V | 1.1V @ 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBP208 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbp208-datasheets-0375.pdf | 4-SIP, KBP | 4 | 4 Weeks | EAR99 | NO | WIRE | 4 | R-PSIP-W4 | 2A | 60A | 10μA | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 10A | 800V | Single Phase | 1 | 2A | 800V | 10μA @ 50V | 1.1V @ 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ408G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2006 | 4-SIP, KBJ | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 27 | Right Angle | 5.05kV | KBJ | 600μm | 4A | 120A | 5μA | 5A | 800V | Single Phase | 800V | 5μA @ 800V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR34 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, BR-3 | 4 Weeks | 280Ohm | 3 | PRODUCTION (Last Updated: 5 months ago) | 3A | 50A | 10μA | 10A | 400V | Single Phase | 400V | 10μA @ 400V | 1V @ 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU8A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 15 | Right Angle | 80mOhm | GBU | 600μm | 8A | 200A | 5μA | 5A | 50V | Single Phase | 50V | 5μA @ 50V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR605 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-6 | 4 | 4 Weeks | 35Ohm | 6 | PRODUCTION (Last Updated: 5 months ago) | yes | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | S-PUFM-W4 | 6A | 125A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 50V | Single Phase | 1 | 6A | 50V | 10μA @ 50V | 1V @ 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR84 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-8 | 4 Weeks | 8 | PRODUCTION (Last Updated: 5 months ago) | 24 AWG | 8A | 125A | 10μA | 2m | 10A | 400V | Single Phase | 400V | 10μA @ 400V | 1.1V @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ2506G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | NO | 4 | Bridge Rectifier Diodes | 25A | 350A | 5μA | 5A | 600V | Single Phase | 600V | 10μA @ 600V | 1.05V @ 12.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC5010T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 400A | 50A | 1kV | 5μA @ 1000V | 1.1V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC1502T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-gbpc1502t-datasheets-2475.pdf | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 300A | 15A | 200V | 5μA @ 200V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC1506T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-gbpc1506t-datasheets-2493.pdf | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 300A | 15A | 600V | 5μA @ 600V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC1504W | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, GBPC-W | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBPC-W | Single Phase | 400V | 5μA @ 400V | 1.1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC3510T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, KBPC-T | 4 Weeks | 4 | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 4 | Bridge Rectifier Diodes | Single Phase | 35A | 1kV | 5μA @ 1000V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBPC35005T | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | /files/genesicsemiconductor-gbpc35005t-datasheets-2595.pdf | 4-Square, GBPC | 4 Weeks | PRODUCTION (Last Updated: 5 months ago) | Single Phase | 50V | 5μA @ 50V | 1.1V @ 17.5A | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL603G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-SIP, KBL | 4 | 7 Weeks | EAR99 | NO | WIRE | 4 | R-PSIP-W4 | 6A | 180A | 5μA | BRIDGE, 4 ELEMENTS | SILICON | 5A | 200V | Single Phase | 1 | 6A | 200V | 5μA @ 200V | 1.1V @ 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W01M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | 125°C | -65°C | Standard | RoHS Compliant | 2008 | /files/genesicsemiconductor-w005m-datasheets-0733.pdf | 4-Circular, WOM | 4 Weeks | WOM | 1.5A | 50A | 10μA | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1V @ 1A | 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPM208G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | /files/genesicsemiconductor-kbpm210g-datasheets-0738.pdf | 4-SIP, KBPM | 7 Weeks | 4 | 6 | Straight | 5.05kV | 1.25mm | 2A | 65A | 5μA | 5A | 800V | Single Phase | 800V | 5μA @ 50V | 1.1V @ 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST16035 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | Bulk | 1 (Unlimited) | Solder | 125°C | -40°C | RoHS Compliant | 2010 | TO-249AB | 3 | 6 Weeks | No SVHC | 3 | PRODUCTION (Last Updated: 6 months ago) | yes | 10 | Straight | EAR99 | 20mOhm | SINGLE | NOT SPECIFIED | Common Cathode | NOT SPECIFIED | 2 | 2.54mm | 160A | 750mV | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.2kA | 1μA | 35V | Schottky | 35V | 160A | 1 | 80A | 1mA @ 20V | 750mV @ 160A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR30035CTR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | 2003 | Twin Tower | 2 | 4 Weeks | No SVHC | 2 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 2 | 150A | 650mV | 2.5kA | 1μA | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 35V | Schottky, Reverse Polarity | 35V | 300A | 1 | 1mA @ 35V | 700mV @ 150A | -55°C~150°C | 1 Pair Common Anode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRT12060R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | Bulk | 1 (Unlimited) | Solder | 150°C | -40°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbrt12060r-datasheets-9759.pdf | Three Tower | 3 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 22 | Right Angle | EAR99 | 8541.10.00.80 | 20mOhm | UPPER | UNSPECIFIED | 2 | R-PUFM-X3 | 2.5mm | 120A | 800A | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 60V | Schottky | 60V | 120A | 1 | 60A | 1mA @ 20V | 800mV @ 60A | 120A DC | -55°C~150°C | 1 Pair Common Anode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRTA400120(A) | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/genesicsemiconductor-msrta400160a-datasheets-4158.pdf | Three Tower | 10 Weeks | Common Cathode | Three Tower | 400A | 4.15kA | Standard Recovery >500ns, > 200mA (Io) | 25μA | 1.2kV | 1.2kV | Standard | 1.2kV | 400A | 1200V | 25μA @ 600V | 1.2V @ 400A | 400A DC | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST120100 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | Bulk | 1 (Unlimited) | Solder | 125°C | -40°C | RoHS Compliant | 2010 | TO-249AB | 3 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | Female | 3 | Straight | 20mOhm | SINGLE | 2 | 2.54mm | 120A | 1.2kA | 1μA | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky | 100V | 120A | 1 | 60A | 2mA @ 20V | 840mV @ 120A | 120A DC | -55°C~150°C | 1 Pair Common Cathode |
