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ContactIXYS-RF(112)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Voltage - Rated | Frequency | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Application | DS Breakdown Voltage-Min | FET Technology | Speed | Power - Output | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Current Rating (Amps) | Reverse Current-Max | Reverse Test Voltage | Reverse Recovery Time | Diode Type | Number of Phases | Output Current-Max | Rise / Fall Time (Typ) | Channel Type | Current - Test | Drain Current-Max (Abs) (ID) | Driven Configuration | Gate Type | Current - Peak Output (Source, Sink) | Logic Voltage - VIL, VIH | Voltage - DC Reverse (Vr) (Max) | Supplied Contents | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Transistor Type | Voltage - Test |
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| 150-201N09A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 200V | /files/ixysrf-150201n09a00-datasheets-2404.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | DE150 | 200W | 9A | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DVRFD615X2 | IXYS-RF |
Min: 1 Mult: 1 |
download | MOSFET Driver | 3 (168 Hours) | 2015 | 10 Weeks | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZ210N50L2 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 70MHz | ROHS3 Compliant | /files/ixysrf-ixz210n50l2-datasheets-8751.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | yes | 17dB | 390W | 10A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 375-102N15A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 1000V | /files/ixysrf-375102n15a00-datasheets-2418.pdf | 6-SMD, Flat Lead Exposed Pad | DE375 | 940W | 15A | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DVRFD631-375/475 | IXYS-RF |
Min: 1 Mult: 1 |
download | MOSFET Driver | 1 (Unlimited) | 2013 | 10 Weeks | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 150-501N04A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 500V | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixysrf-150501n04a00-datasheets-8755.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | 200W | 4.5A | 25μA | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZ318N50 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 65MHz | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/ixysrf-ixz318n50-datasheets-2425.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | 10 Weeks | yes | compliant | YES | DUAL | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | 23dB | Not Qualified | R-PDSO-F6 | SILICON | SINGLE | ISOLATED | SWITCHING | 880W | 500V | METAL-OXIDE SEMICONDUCTOR | 880W | 19A | 19A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||
| DVRFD630-375/475 | IXYS-RF |
Min: 1 Mult: 1 |
download | MOSFET Driver | 1 (Unlimited) | 2013 | 10 Weeks | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 475-102N21A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 1000V | 6-SMD, Flat Lead Exposed Pad | 26 Weeks | 1800W | 24A | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 275X2-102N06A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 1000V | /files/ixysrf-275x2102n06a00-datasheets-2434.pdf | 8-SMD, Flat Lead Exposed Pad | DE275 | 1180W | 8A | 2 N-Channel (Dual) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DVRFM631DF18N50 | IXYS-RF |
Min: 1 Mult: 1 |
download | MOSFET Driver | 1 (Unlimited) | Non-RoHS Compliant | 2014 | 10 Weeks | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZH10N50L2A | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 70MHz | /files/ixysrf-ixzh10n50l2a-datasheets-9029.pdf | TO-247-3 | 10 Weeks | 17dB | TO-247 (IXFH) | 200W | 10A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZR18N50 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 65MHz | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/ixysrf-ixzr18n50a00-datasheets-9109.pdf | TO-247-3 | 3 | 10 Weeks | yes | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | 23dB | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 350W | 500V | METAL-OXIDE SEMICONDUCTOR | 350W | 19A | 19A | N-Channel | ||||||||||||||||||||||||||||||||||||||||
| DVRFD630-150/275 | IXYS-RF |
Min: 1 Mult: 1 |
download | MOSFET Driver | 1 (Unlimited) | 2013 | 10 Weeks | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZH10N50L2B | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 70MHz | ROHS3 Compliant | /files/ixysrf-ixzh10n50l2a-datasheets-9029.pdf | TO-247-3 | 10 Weeks | 17dB | TO-247 (IXFH) | 200W | 10A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZ316N60 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 600V | 65MHz | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/ixysrf-ixz316n60-datasheets-2447.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | 10 Weeks | yes | compliant | YES | DUAL | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | 23dB | Not Qualified | R-PDSO-F6 | SILICON | SINGLE | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 880W | 18A | 18A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||
| PRF-1150 | IXYS-RF |
Min: 1 Mult: 1 |
download | MOSFET Driver | 1 (Unlimited) | 13.56MHz | /files/ixysrf-prf1150-datasheets-3656.pdf | 10 Weeks | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZR18N50A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 65MHz | ROHS3 Compliant | /files/ixysrf-ixzr18n50a00-datasheets-9109.pdf | TO-247-3 | 10 Weeks | 23dB | 350W | 19A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 475-501N44A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 500V | /files/ixysrf-475501n44a00-datasheets-2448.pdf | 6-SMD, Flat Lead Exposed Pad | DE475 | 1800W | 48A | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS150TA60110 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | /files/ixysrf-ss150ta60110-datasheets-3944.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | EAR99 | PD-CASE | 8541.10.00.80 | YES | DUAL | 175°C | 3 | Rectifier Diodes | R-PDFP-F6 | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 60W | 600V | 50μA | 0ns | Silicon Carbide Schottky | 1 | 10A | 600V | 50μA @ 600V | 1.8V @ 5A | 10A | -55°C~175°C | 3 Common Anode | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXZR08N120A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 1200V | 65MHz | /files/ixysrf-ixzr08n120a00-datasheets-9119.pdf | TO-247-3 | 10 Weeks | 23dB | PLUS247™-3 | 250W | 8A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZR08N120 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 1200V | 65MHz | ENHANCEMENT MODE | RoHS Compliant | /files/ixysrf-ixzr08n120a00-datasheets-9119.pdf | TO-247-3 | 3 | 10 Weeks | yes | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | 23dB | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250W | 1200V | METAL-OXIDE SEMICONDUCTOR | 250W | 8A | 8A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||
| IXRFD631-NRF | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2013 | /files/ixysrf-ixrfd631nrf-datasheets-0699.pdf | 6-SMD, Flat Lead Exposed Pad | 1 | 8V~18V | 4ns 4ns | Single | Low-Side | N-Channel, P-Channel MOSFET | 30A 30A | 0.8V 3.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS150TI60110 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | /files/ixysrf-ss150ta60110-datasheets-3944.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | EAR99 | PD-CASE | 8541.10.00.80 | YES | DUAL | 175°C | 3 | Other Diodes | R-PDFP-F6 | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 60W | 600V | 50μA | 600V | 0ns | Silicon Carbide Schottky | 1 | 10A | 600V | 50μA @ 600V | 1.8V @ 5A | 10A | -55°C~175°C | 3 Independent | |||||||||||||||||||||||||||||||||||||||||||||||
| IXZR08N120B-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 1200V | 65MHz | /files/ixysrf-ixzr08n120a00-datasheets-9119.pdf | TO-247-3 | 10 Weeks | 23dB | PLUS247™-3 | 250W | 8A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 475-102N20A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 1000V | /files/ixysrf-475102n20a00-datasheets-2477.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | DE475 | 1800W | 20A | N-Channel |
