| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Throw Configuration | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Power - Max | Power Dissipation-Max | Reverse Voltage | JEDEC-95 Code | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Number of Inputs | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | On-State Resistance (Max) | Avalanche Energy Rating (Eas) | Input | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Nom (toff) | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MUBW30-12A6K | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mubw3012a6-datasheets-7591.pdf | E1 | Lead Free | 25 | 20 Weeks | 1 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) | 130W | UPPER | UNSPECIFIED | NOT SPECIFIED | MUBW | 25 | NOT SPECIFIED | 7 | Not Qualified | R-XUFM-X25 | 1nF | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 130W | 1.6kV | 1.2kV | 180 ns | 3.8V | 30A | Three Phase Bridge Rectifier | 1200V | 570 ns | 1mA | 3.8V @ 15V, 30A | NPT | Yes | 1nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXN200N60B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | XPT™, GenX3™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/ixys-ixxn200n60b3h1-datasheets-0705.pdf | SOT-227-4, miniBLOC | 8 Weeks | 780W | 9.97nF | Single | 780W | 600V | 1.7V | 200A | Standard | 50μA | 1.7V @ 15V, 100A | PT | No | 9.97nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN72N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GenX3™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/ixys-ixgn72n60a3-datasheets-0821.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | UL RECOGNIZED, LOW CONDUCTION LOSS | Nickel (Ni) | 360W | UPPER | UNSPECIFIED | IXG*72N60 | 4 | 360W | 1 | 6.6nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 1.35V | 61 ns | 600V | 160A | Standard | 885 ns | 75μA | 1.35V @ 15V, 60A | PT | No | 6.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPC7220WTR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2013 | 28-LCC (J-Lead) | 4mA | 1.182714g | 6V | 4.5V | 38Ohm | 28 | Buffered | Ultrasound | 2.5W | 8 | 2.5W | 28-PLCC (11.51x11.51) | SPST | 5 μs | 5 μs | 200V | Dual, Single | -160V | 8 | 8 | 38Ohm | 1:1 | 4.5V~6V | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH96P085T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixth96p085t-datasheets-1752.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 96A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 298W Tc | TO-247AD | 1000 mJ | P-Channel | 13100pF @ 25V | 13m Ω @ 500mA, 10V | 4V @ 250μA | 96A Tc | 180nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN660N04T4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchT4™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixtn660n04t4-datasheets-2193.pdf | SOT-227-4, miniBLOC | 28 Weeks | yes | unknown | 660A | 40V | 1040W Tc | N-Channel | 44000pF @ 25V | 0.85m Ω @ 100A, 10V | 4V @ 250μA | 660A Tc | 860nC @ 10V | Current Sensing | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMM90-09P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM70-01P2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-gwm7001p2-datasheets-4287.pdf | ISOPLUS-DIL™ | 17 | yes | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 6 | Not Qualified | R-PDSO-F17 | 70A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.014Ohm | 6 N-Channel (3-Phase Bridge) | 14m Ω @ 35A, 10V | 4V @ 1mA | 110nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM120-0075X1-SLSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | /files/ixys-gwm1200075x1smd-datasheets-5782.pdf | 17-SMD, Flat Leads | GWM120 | 110A | 75V | 6 N-Channel (3-Phase Bridge) | 4.9m Ω @ 60A, 10V | 4V @ 1mA | 115nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM22-05PF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-fmm2205pf-datasheets-0347.pdf | i4-Pac™-5 | 5 | 30 Weeks | 5 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 132W | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 13A | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | METAL-OXIDE SEMICONDUCTOR | 132W | 0.27Ohm | 2 N-Channel (Dual) | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5V @ 1mA | 50nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCB20P1200LB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | MCB20P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTI145WX100GD-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | ISOPLUS-DIL™ | 24 | 28 Weeks | EAR99 | e3 | TIN OVER NICKEL | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6 | R-PDSO-G24 | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 190A | 0.0022Ohm | 6 N-Channel (3-Phase Bridge) | 11100pF @ 50V | 2.2m Ω @ 100A, 10V | 3.5V @ 275μA | 190A Tc | 155nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH6N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixth6n100d2-datasheets-5417.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 6A Tc | 95nC @ 5V | Depletion Mode | ±20V |
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