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ContactIXYS / Littelfuse(10406)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Feature | Terminal Finish | Applications | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Power Dissipation-Max | Reverse Voltage | JEDEC-95 Code | Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Number of Inputs | Voltage @ Pmpp | Power (Watts) - Max | Current @ Pmpp | Voltage - Open Circuit | Current - Short Circuit (Isc) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Avalanche Energy Rating (Eas) | Input | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| VII50-12P1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/ixys-vdi5012p1-datasheets-7497.pdf | ECO-PAC2 | 12 | 12 | yes | e4 | Gold (Au) - with Nickel (Ni) barrier | 208W | UPPER | UNSPECIFIED | NOT SPECIFIED | VII | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 1.65nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 208W | 1.2kV | 170 ns | 3.7V | 49A | Standard | 1200V | 570 ns | 20V | 1.1mA | 3.7V @ 15V, 50A | NPT | Yes | 1.65nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXEN60N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2003 | /files/ixys-ixen60n120d1-datasheets-7445.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 38.000013g | Nickel (Ni) | 445W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | R-PUFM-X4 | 3.8nF | 80 ns | 680 ns | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 445W | 1.2kV | 2.1V | 130 ns | 2.7V | 100A | Standard | 1200V | 710 ns | 20V | 6.5V | 800μA | 2.7V @ 15V, 60A | NPT | No | 3.8nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VID50-12P1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/ixys-vdi5012p1-datasheets-7497.pdf | ECO-PAC2 | 10 | 10 | yes | 208W | UPPER | UNSPECIFIED | NOT SPECIFIED | VID | 10 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | 1.65nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 208W | 1.2kV | 170 ns | 3.7V | 49A | Standard | 1200V | 570 ns | 20V | 1.1mA | 3.7V @ 15V, 50A | NPT | Yes | 1.65nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIAA15WE600TMH | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | RoHS Compliant | 2008 | /files/ixys-miaa15we600tmh-datasheets-8094.pdf | MiniPack2 | 22 | 2 | yes | UL RECOGNIZED | 80W | UPPER | UNSPECIFIED | NOT SPECIFIED | 26 | NOT SPECIFIED | 7 | Not Qualified | 700pF | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 80W | 1.6kV | 600V | 85 ns | 2.5V | 23A | Single Phase Bridge Rectifier | 280 ns | 600μA | 2.5V @ 15V, 15A | NPT | Yes | 0.7nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYN100N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | XPT™, GenX3™ | Chassis Mount, Surface Mount | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-ixyn100n120c3-datasheets-0108.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 17 Weeks | 4 | AVALANCHE RATED, UL RECOGNIZED | 830W | UPPER | UNSPECIFIED | 4 | 830W | 1 | Insulated Gate BIP Transistors | 6nF | 32 ns | 123 ns | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 2.9V | 122 ns | 1.2kV | 152A | Standard | 1200V | 265 ns | 20V | 5V | 25μA | 3.5V @ 15V, 100A | No | 6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXA70I1200NA | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Chassis, Stud, Surface Mount | Chassis, Stud Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/ixys-ixa70i1200na-datasheets-0558.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.25mm | 4 | 10 Weeks | 4 | EAR99 | UL RECOGNIZED | 350W | UPPER | UNSPECIFIED | 4 | 350W | 1 | Insulated Gate BIP Transistors | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 1.8V | 110 ns | 1.2kV | 100A | Standard | 1200V | 350 ns | 2.1 V | 20V | 100μA | 2.1V @ 15V, 50A | PT | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN120N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GenX3™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-ixgn120n60a3d1-datasheets-0688.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 38.000013g | yes | LOW CONDUCTION LOSS, UL RECOGNIZED | Nickel (Ni) | 595W | UPPER | UNSPECIFIED | IXG*120N60 | 4 | 1 | Insulated Gate BIP Transistors | R-PUFM-X4 | 14.8nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 595W | 600V | 123 ns | 1.35V | 200A | Standard | 830 ns | 20V | 50μA | 1.35V @ 15V, 100A | PT | No | 14.8nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN82N120B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GenX3™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-ixgn82n120b3h1-datasheets-0826.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | 4 | yes | ULTRA FAST, LOW CONDUCTION LOSS, UL RECOGNIZED | Nickel (Ni) | 595W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 7.9nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 595W | 1.2kV | 112 ns | 3.2V | 145A | Standard | 1200V | 760 ns | 20V | 5V | 50μA | 3.2V @ 15V, 82A | PT | No | 7.9nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPC7232K | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2013 | 48-LQFP | 4mA | 181.692094mg | 6V | 4.5V | 38Ohm | 48 | Buffered | Ultrasound | 2.3W | 8 | 2.3W | 48-LQFP | SPST | 5 μs | 5 μs | 200V | Dual, Single | -160V | 8 | 8 | 38Ohm | 1:1 | 4.5V~6V | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH50N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh50n20-datasheets-1852.pdf | 200V | 50A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 15ns | 16 ns | 72 ns | 50A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 200 ns | 200A | 200V | N-Channel | 4400pF @ 25V | 4 V | 45m Ω @ 25A, 10V | 4V @ 4mA | 50A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH160N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth160n10t-datasheets-2198.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 7MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Powers | Not Qualified | R-PSFM-T3 | 61ns | 42 ns | 49 ns | 160A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-247AD | 430A | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 160A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCB60P1200TLB-TUB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM150-0075P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-fmm1500075p-datasheets-4327.pdf | i4-Pac™-5 | 5 | yes | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | Not Qualified | R-PSIP-T5 | 150A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 0.0042Ohm | 2 N-Channel (Dual) | 4.2m Ω @ 120A, 10V | 4V @ 1mA | 225nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM110-015X2F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-fmm110015x2f-datasheets-0313.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | e1 | TIN SILVER COPPER | 180W | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 53A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | METAL-OXIDE SEMICONDUCTOR | 180W | 300A | 0.02Ohm | 800 mJ | 2 N-Channel (Dual) | 8600pF @ 25V | 20m Ω @ 55A, 10V | 4.5V @ 250μA | 150nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM65-015P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-fmm65015p-datasheets-0348.pdf | i4-Pac™-5 | 5 | yes | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | Not Qualified | R-PSIP-T5 | 65A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | METAL-OXIDE SEMICONDUCTOR | 0.022Ohm | 2 N-Channel (Dual) | 22m Ω @ 50A, 10V | 4V @ 1mA | 230nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LKK47-06C5 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-lkk4706c5-datasheets-0388.pdf | ISOPLUS264™ | Lead Free | 5 | 32 Weeks | 5 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 480W | 2 | FET General Purpose Power | Not Qualified | 20ns | 10 ns | 100 ns | 47A | 20V | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 600V | 2 N-Channel (Dual) | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GMM3X60-015X2-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tray | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/ixys-gmm3x60015x2smd-datasheets-0346.pdf | ISOPLUS-DIL™ | 30 Weeks | 50A | 150V | 6 N-Channel (3-Phase Bridge) | 5800pF @ 25V | 24m Ω @ 38A, 10V | 4.5V @ 1mA | 97nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N100Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfa4n100q-datasheets-0756.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 3Ohm | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 150W Tc | 4A | 700 mJ | 1kV | N-Channel | 1050pF @ 25V | 3 Ω @ 2A, 10V | 4.5V @ 1.5mA | 4A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH6N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/ixys-ixta6n50d2-datasheets-1686.pdf | TO-247-3 | 3 | 24 Weeks | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44P15T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtp44p15t-datasheets-5534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 65MOhm | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 50 ns | 44A | 15V | SILICON | DRAIN | SWITCHING | 150V | 298W Tc | -150V | P-Channel | 13400pF @ 25V | 65m Ω @ 22A, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KXOB25-14X1F-TR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Monocrystalline | IXOLAR™ | -40°C~90°C | Tape & Reel (TR) | 0.906Lx0.315W x 0.071 H 23.00mmx8.00mmx1.80mm | 3 (168 Hours) | ROHS3 Compliant | /files/ixys-kxob2514x1ftr-datasheets-5350.pdf | Cells | 9 Weeks | 560mV | 30.7mW | 55mA | 690mV | 58.6mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB44N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfb44n100p-datasheets-5757.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 68ns | 56 ns | 90 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1250W Tc | 110A | 0.22Ohm | 2000 mJ | 1kV | N-Channel | 19000pF @ 25V | 220m Ω @ 22A, 10V | 6.5V @ 1mA | 44A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KXOB22-01X8F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Monocrystalline | IXOLAR™ | Tube | 0.866Lx0.276W x 0.074 H 22.00mmx7.00mmx1.80mm | 3 (168 Hours) | RoHS Compliant | /files/ixys-kxob2201x8f-datasheets-5624.pdf | Cell (8) | 1.8mm | 3.4V | KXOB22-01X8F | 3.8mA | 4.7V | 4.4mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA6N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfa6n120p-datasheets-9264.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | 8541.90.00.00 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 250W Tc | 6A | 18A | 0.0024Ohm | N-Channel | 2830pF @ 25V | 2.4 Ω @ 500mA, 10V | 5V @ 1mA | 6A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLMD121H04L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Monocrystalline | IXOLAR™ | Tray | 1.693Lx0.551W x 0.079 H 43.00mmx14.00mmx2.00mm | 1 (Unlimited) | RoHS Compliant | /files/ixys-slmd121h04l-datasheets-5763.pdf | Cell (4) | Lead Free | 25 Weeks | yes | 89mW | 2V | 44.6mA | 2.52V | 50mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ170N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt170n10p-datasheets-5567.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 5V | 715W Tc | 0.009Ohm | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XOB17-12X1-TR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Monocrystalline | IXOLAR™ | Tape & Reel (TR) | 0.866Lx0.276W x 0.063 H 22.00mmx7.00mmx1.60mm | 1 (Unlimited) | RoHS Compliant | /files/ixys-xob1712x1-datasheets-5984.pdf | Cells | 20mW | 510mV | 20mW | 39mA | 630mV | 42mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN62N80Q3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfn62n80q3-datasheets-2290.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 140MOhm | 4 | UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | Not Qualified | 54 ns | 300ns | 62 ns | 49A | 30V | SILICON | ISOLATED | SWITCHING | 960W Tc | 180A | 5000 mJ | 800V | N-Channel | 13600pF @ 25V | 140m Ω @ 31A, 10V | 6.5V @ 8mA | 49A Tc | 270nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLMD121H10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Monocrystalline | IXOLAR™ | Tray | 1.378Lx1.654W x 0.079 H 35.00mmx42.00mmx2.00mm | 1 (Unlimited) | RoHS Compliant | 2011 | /files/ixys-slmd121h08l-datasheets-5691.pdf | Cell (10) | Lead Free | yes | 223mW | 5.01V | 44.6mA | 6.3V | 50mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH67N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixth67n10-datasheets-1685.pdf | 100V | 67A | TO-247-3 | Lead Free | 3 | 8 Weeks | 25MOhm | 3 | yes | EAR99 | No | 3 | Single | 300W | 1 | FET General Purpose Power | 60ns | 30 ns | 100 ns | 67A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 268A | 100V | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V |
