Harris Corporation(134)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Series Mounting Type Operating Temperature Technology Package / Case Capacitance Number of Elements Supplier Device Package Drain to Source Voltage (Vdss) Current - Peak Pulse (10/1000μs) Voltage - Off State Voltage - Breakover Voltage - On State Current - Hold (Ih) Current - Peak Pulse (8/20μs) Current - Hold (Ih) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - On State (It (AV)) (Max) SCR Type FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C FET Feature Vgs (Max) Mfr
2N4987 2N4987 Harris Corporation
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- Through Hole -65°C ~ 125°C (TJ) TO-98-3 TO-98 30 V 1.55 mA - 1 A Standard Recovery Harris Corporation
BUZ60BU BUZ60BU Harris Corporation
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* Harris Corporation
IRFU1920 IRFU1920 Harris Corporation
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* Harris Corporation
SGT10S10 SGT10S10 Harris Corporation
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- Through Hole TO-202 Short Tab 90pF 2 100 A 1V 100V 2 V 100 mA 200 A Harris Corporation
RFP15N12 RFP15N12 Harris Corporation $212.15
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- Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-220-3 TO-220-3 120 V N-Channel 1700 pF @ 25 V 150mOhm @ 7.5A, 10V 4V @ 1mA 15A (Tc) - ±20V Harris Corporation
IRFR220119 IRFR220119 Harris Corporation
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* Harris Corporation
IRF730R4587 IRF730R4587 Harris Corporation
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* Harris Corporation

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