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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMG8880LK3-13 | Diodes Incorporated | $9.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg8880lk313-datasheets-0801.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3.949996g | No SVHC | no | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 4 | 1 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.68W Ta | 48A | 0.0093Ohm | 30V | N-Channel | 1289pF @ 15V | 7.5m Ω @ 11.6A, 10V | 2.3V @ 250μA | 11A Ta | 27.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| DMN67D7L-7 | Diodes Incorporated | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn67d7l7-datasheets-0647.pdf | TO-236-3, SC-59, SOT-23-3 | 13 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 570mW Ta | N-Channel | 22pF @ 25V | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 210mA Ta | 0.821nC @ 10V | 5V 10V | ±40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K44FS,LF | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SC-75, SOT-416 | 12 Weeks | 30V | 150mW Ta | N-Channel | 8.5pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138W-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microcommercialco-bss138wtp-datasheets-0664.pdf | SC-70, SOT-323 | 22 Weeks | yes | 50V | 300mW Ta | N-Channel | 27pF @ 25V | 3.5 Ω @ 220mA, 10V | 1.5V @ 1mA | 220mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K36FS,LF | Toshiba Semiconductor and Storage | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SC-75, SOT-416 | 12 Weeks | EAR99 | unknown | 500mA | 20V | 150mW Ta | N-Channel | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | 1.5V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RUC002N05T116 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | 10 | 1 | FET General Purpose Power | 4 ns | 6ns | 55 ns | 15 ns | 200mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 200mW Ta | 0.2A | 2.4Ohm | N-Channel | 25pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 1V @ 1mA | 200mA Ta | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| VS-FC270SA20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfc270sa20-datasheets-0697.pdf | SOT-227-4, miniBLOC | 20 Weeks | SOT-227 | 200V | 937W Tc | N-Channel | 16500pF @ 100V | 4.7mOhm @ 200A, 10V | 4.3V @ 1mA | 287A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2372DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2372dst1ge3-datasheets-0645.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 13 Weeks | 43mOhm | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 960mW Ta 1.7W Tc | TO-236AB | 5.3A | N-Channel | 288pF @ 15V | 33m Ω @ 3A, 10V | 2.5V @ 250μA | 4A Ta 5.3A Tc | 8.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NX7002BKMYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-nx7002bkmyl-datasheets-0570.pdf | SC-101, SOT-883 | 3 | 8 Weeks | LOGIC LEVEL COMPATIBLE | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 350mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 350mW Ta 3.1W Tc | 0.35A | 3.2Ohm | N-Channel | 23.6pF @ 10V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 350mA Ta | 1nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J35AMFV,L3F | Toshiba Semiconductor and Storage | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-723 | 12 Weeks | 20V | 150mW Ta | P-Channel | 42pF @ 10V | 1.4 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 1.2V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU1J002YNTCL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-ru1j002yntcl-datasheets-0439.pdf | SC-85 | 1.05mm | Lead Free | 3 | 16 Weeks | 85 | EAR99 | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 150mW | 1 | 150°C | R-PDSO-F3 | 5 ns | 17 ns | 200mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150mW Ta | 0.2A | 2.8Ohm | 50V | N-Channel | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | 200mA Ta | 0.9V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| NX7002BKMBYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-nx7002bkmbyl-datasheets-0595.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | LOGIC LEVEL COMPATIBLE | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 350mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 350mW Ta 3.1W Tc | N-Channel | 23.6pF @ 10V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 350mA Ta | 1nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AO4494 | Alpha & Omega Semiconductor Inc. | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | 18A | 30V | 3.1W Ta | N-Channel | 1900pF @ 15V | 6.5m Ω @ 18A, 10V | 2.5V @ 250μA | 18A Tc | 36nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK49N65W5,S1F | Toshiba Semiconductor and Storage | $4.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCQ4822-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microcommercialco-mcq4822tp-datasheets-0428.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 22 Weeks | YES | DUAL | GULL WING | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | 1.4W Ta | 30A | 0.016Ohm | N-Channel | 1250pF @ 15V | 30ns | 14ns | 26m Ω @ 6A, 4.5V | 3V @ 250μA | 8.5A Ta | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7403 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aon7403-datasheets-9395.pdf | 8-PowerVDFN | 5 | 16 Weeks | 8 | EAR99 | DUAL | FLAT | 8 | 25W | 1 | Other Transistors | Not Qualified | S-PDSO-F5 | 29A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 25W Tc | P-Channel | 1400pF @ 15V | 18m Ω @ 8A, 10V | 3V @ 250μA | 11A Ta 29A Tc | 24nC @ 15V | 5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| NX138BKWX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-nx138bkwx-datasheets-0436.pdf | SC-70, SOT-323 | 3 | 4 Weeks | IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 266mW Ta 1.33W Tc | 0.21A | N-Channel | 20pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 210mA Ta | 0.7nC @ 10V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K72CFS,LF | Toshiba Semiconductor and Storage | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SC-75, SOT-416 | 12 Weeks | 170mA | 60V | 150mW Ta | N-Channel | 17pF @ 10V | 3.9 Ω @ 100mA, 10V | 2.1V @ 250μA | 170mA Ta | 0.35nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J206FE(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6j206fete85lf-datasheets-0459.pdf | SOT-563, SOT-666 | 6 | No | Single | 500mW | Other Transistors | 2A | 8V | 20V | 500mW Ta | 2A | -20V | P-Channel | 335pF @ 10V | 130m Ω @ 1A, 4V | 1V @ 1mA | 2A Ta | 1.8V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7401 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-PowerVDFN | 16 Weeks | 8 | No | 29W | 1 | Other Transistors | 35A | 25V | Single | 30V | 3.1W Ta 29W Tc | P-Channel | 2600pF @ 15V | 14m Ω @ 9A, 10V | 3V @ 250μA | 12A Ta 35A Tc | 39nC @ 10V | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2015UFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2015ufde7-datasheets-0471.pdf | 6-PowerUDFN | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | 6 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 1 | 40 | 1 | FET General Purpose Power | R-PDSO-N3 | 7.4 ns | 16.8ns | 10.9 ns | 43.6 ns | 10.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 660mW Ta | 9.4A | 20V | N-Channel | 1779pF @ 10V | 11.6m Ω @ 8.5A, 4.5V | 1.1V @ 250μA | 10.5A Ta | 45.6nC @ 10V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
| NX138BKR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-nx138bkr-datasheets-0485.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | IEC-60134 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 265mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 310mW Ta | TO-236AB | 0.265A | 3.8Ohm | N-Channel | 20.2pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 265mA Ta | 0.49nC @ 4.5V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMP2033UCB9-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/diodesincorporated-dmp2033ucb97-datasheets-0508.pdf | 9-UFBGA, WLBGA | 7 Weeks | No SVHC | 9 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 1 | NOT SPECIFIED | Other Transistors | 8.5 ns | 11.8ns | 56 ns | 47 ns | 4.2A | -6V | Single | 20V | 1W Ta | 5.8A | -20V | P-Channel | 500pF @ 10V | 33m Ω @ 2A, 4.5V | 1.1V @ 250μA | 4.2A Ta | 7nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMS3016SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dms3016sfg7-datasheets-0540.pdf | 8-PowerVDFN | 5 | No SVHC | 8 | no | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 8 | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 980mW Ta | 7A | 0.013Ohm | N-Channel | 1886pF @ 15V | 13m Ω @ 11.2A, 10V | 2.2V @ 250μA | 7A Ta | 44.6nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| 2N7002-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-2n7002t1e3-datasheets-0519.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 1.437803g | Unknown | 7.5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | 15A | e3 | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 200mW | 1 | FET General Purpose Powers | 150°C | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 2.1V | 200mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 2.1 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||
| DMN3033LSNQ-7 | Diodes Incorporated | $0.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3033lsnq7-datasheets-0366.pdf | TO-236-3, SC-59, SOT-23-3 | 6 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 6A | 30V | 1.4W Ta | N-Channel | 755pF @ 10V | 30m Ω @ 6A, 10V | 2.1V @ 250μA | 6A Ta | 10.5nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMCM4401UPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmcm4401upez-datasheets-0404.pdf | 4-XFBGA, WLCSP | 4 | 13 Weeks | IEC-60134 | YES | BOTTOM | BALL | 1 | S-PBGA-B4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 400mW Ta 12.5W Tc | 3.2A | 0.095Ohm | P-Channel | 420pF @ 10V | 95m Ω @ 3A, 4.5V | 900mV @ 250μA | 4A Ta | 10nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN2069FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn6a07fta-datasheets-6652.pdf | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K7002KFU,LF | Toshiba Semiconductor and Storage | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SC-70, SOT-323 | 12 Weeks | 60V | 150mW Ta | N-Channel | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 400mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP1022UFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp1022ufde7-datasheets-0258.pdf | 6-UDFN Exposed Pad | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 6 | 2 | Single | 40 | 2.03W | 1 | Other Transistors | S-PDSO-N3 | 20 ns | 28ns | 93 ns | 117 ns | 9.1A | 8V | SILICON | DRAIN | SWITCHING | 12V | 660mW Ta | P-Channel | 2953pF @ 4V | 16m Ω @ 8.2A, 4.5V | 800mV @ 250μA | 9.1A Ta | 42.6nC @ 5V | 1.2V 4.5V | ±8V |
