Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TSM60NB190CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb190cic0g-datasheets-2081.pdf | TO-220-3 | 3 | 24 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 33.8W Tc | TO-220AB | 18A | 54A | 0.19Ohm | 212.9 mJ | N-Channel | 1273pF @ 100V | 190m Ω @ 6A, 10V | 4V @ 250μA | 18A Tc | 31nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002/HAMR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-2n7002215-datasheets-5742.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | 60V | 830mW Tc | N-Channel | 50pF @ 10V | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 300mA Tc | 4.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW45NM50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw45nm50-datasheets-2365.pdf | 500V | 45A | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 16 Weeks | 9.071847g | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STW45N | 3 | 1 | Single | NOT SPECIFIED | 417W | 1 | FET General Purpose Power | Not Qualified | 150°C | 29.1 ns | 107.5ns | 87.7 ns | 21.6 ns | 45A | 30V | SILICON | SWITCHING | 4V | 417W Tc | TO-247AC | 500V | N-Channel | 3700pF @ 25V | 100m Ω @ 22.5A, 10V | 5V @ 250μA | 45A Tc | 117nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| STW70N60DM6-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw70n60dm64-datasheets-2374.pdf | TO-247-4 | 12 Weeks | 600V | 390W Tc | N-Channel | 4360pF @ 100V | 42m Ω @ 31A, 10V | 4.75V @ 250μA | 62A Tc | 99nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW38N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw38n65m5-datasheets-2380.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 95mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STW38N | Single | 190W | 1 | FET General Purpose Powers | 66 ns | 9ns | 9 ns | 66 ns | 30A | 25V | SILICON | ISOLATED | SWITCHING | 190W Tc | 660 mJ | 650V | N-Channel | 3000pF @ 100V | 95m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 71nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| SUP85N10-10-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sup85n1010ge3-datasheets-2385.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 14 Weeks | 6.000006g | 3 | 1 | Single | 6.55nF | 12 ns | 55 ns | 85A | 20V | 100V | 3.75W Ta 250W Tc | 10.5mOhm | 100V | N-Channel | 6550pF @ 25V | 10.5mOhm @ 30A, 10V | 3V @ 250μA | 85A Tc | 160nC @ 10V | 10.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STE40NC60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ II | Chassis Mount, Panel, Screw | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste40nc60-datasheets-2390.pdf | 600V | 40A | ISOTOP | 38.2mm | 9.1mm | 25.5mm | Lead Free | 4 | 8 Weeks | No SVHC | 130mOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | UPPER | UNSPECIFIED | STE40 | 4 | Single | 460W | 1 | FET General Purpose Power | 2.5kV | 49 ns | 42ns | 26 ns | 41 ns | 40A | 30V | SILICON | ISOLATED | SWITCHING | 460W Tc | 685 ns | 600V | N-Channel | 11100pF @ 25V | 130m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 430nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SIHP065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihp065n60ege3-datasheets-2394.pdf | TO-220-3 | 19.31mm | 14 Weeks | 1 | 250W | 150°C | 28 ns | 54 ns | 40A | 30V | 250W Tc | 600V | N-Channel | 2700pF @ 100V | 65m Ω @ 16A, 10V | 5V @ 250μA | 40A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB041PW C1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb041pwc1g-datasheets-2397.pdf | TO-247-3 | 36 Weeks | TO-247 | 600V | 446W Tc | N-Channel | 6120pF @ 100V | 41mOhm @ 21.7A, 10V | 4V @ 250μA | 78A Tc | 139nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R070C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r070c6fksa1-datasheets-2250.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 17 ns | 6 ns | 90 ns | 53.5A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 391W Tc | 0.07Ohm | N-Channel | 3900pF @ 100V | 70m Ω @ 17.6A, 10V | 3.5V @ 1.76mA | 53.5A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPH3206PD | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206pd-datasheets-2255.pdf | TO-220-3 | 10 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180m Ω @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP36N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcp36n60n-datasheets-2261.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | 2.421g | No SVHC | 90MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 312W | 1 | FET General Purpose Power | 23 ns | 22ns | 4 ns | 94 ns | 36A | 30V | SILICON | SWITCHING | 2V | 312W Tc | TO-220AB | 600V | N-Channel | 4785pF @ 100V | 90m Ω @ 18A, 10V | 4V @ 250μA | 36A Tc | 112nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPW65R099C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r099c6fksa1-datasheets-2270.pdf | TO-247-3 | Lead Free | 3 | 12 Weeks | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 278W | 1 | R-PSFM-T3 | 10.6 ns | 9ns | 6 ns | 77 ns | 38A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 278W Tc | 0.099Ohm | 845 mJ | N-Channel | 2780pF @ 100V | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 38A Tc | 127nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| R6076ENZ1C9 | ROHM Semiconductor | $61.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohm-r6076enz1c9-datasheets-9713.pdf | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 76A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 4V | 120W Tc | 228A | 0.042Ohm | 1954 mJ | N-Channel | 6500pF @ 25V | 42m Ω @ 44.4A, 10V | 4V @ 1mA | 76A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW47N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n60ege3-datasheets-2291.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 19 Weeks | 38.000013g | Unknown | 64mOhm | 3 | yes | No | 1 | Single | 357W | 1 | FET General Purpose Powers | 50 ns | 25ns | 26 ns | 140 ns | 47A | 20V | SILICON | SWITCHING | 600V | 600V | 2.5V | 357W Tc | TO-247AD | N-Channel | 9620pF @ 100V | 64m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| C3M0120100J | Cree/Wolfspeed | $12.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 2017 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 16 Weeks | D2PAK-7 | 1000V | 83W Tc | 120mOhm | N-Channel | 350pF @ 600V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 22A Tc | 21.5nC @ 15V | 15V | +15V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60ege3-datasheets-2298.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 650V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2334DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2334dst1ge3-datasheets-1710.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 15 Weeks | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 30 | 1.3W | 1 | FET General Purpose Powers | 10ns | 8 ns | 4.9A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 400mV | 1.3W Ta 1.7W Tc | 0.044Ohm | N-Channel | 634pF @ 15V | 400 mV | 44m Ω @ 4.2A, 4.5V | 1V @ 250μA | 4.9A Tc | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SIHG35N60E-GE3 | Vishay Siliconix | $5.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg35n60ege3-datasheets-2303.pdf | TO-247-3 | 18 Weeks | 600V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG44N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg44n65efge3-datasheets-2307.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 46A | 154A | 0.073Ohm | 596 mJ | N-Channel | 5892pF @ 100V | 73m Ω @ 22A, 10V | 4V @ 250μA | 46A Tc | 278nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA12N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw12n120k5-datasheets-1855.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STWA12 | NOT SPECIFIED | 12A | 1200V | 250W Tc | N-Channel | 1370pF @ 100V | 690m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 44.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1204R7BFLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 1.2kV | 3.5A | TO-247-3 | 25.96mm | Lead Free | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | 135W | 1 | 150°C | R-PSFM-T3 | 7 ns | 2ns | 24 ns | 20 ns | 3.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 135W Tc | TO-247AD | 425 mJ | 1.2kV | N-Channel | 715pF @ 25V | 4.7 Ω @ 1.75A, 10V | 5V @ 1mA | 3.5A Tc | 31nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHG73N60AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg73n60aege3-datasheets-2318.pdf | TO-247-3 | 25.11mm | 14 Weeks | 1 | 417W | 150°C | 43 ns | 212 ns | 60A | 30V | 417W Tc | 600V | N-Channel | 5500pF @ 100V | 40m Ω @ 36.5A, 10V | 4V @ 250μA | 60A Tc | 394nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW75N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw75n60dm6-datasheets-2321.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STW75N | NOT SPECIFIED | 600V | N-Channel | 72A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW48N60M2-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw48n60m24-datasheets-2246.pdf | TO-247-4 | 26 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STW48N | NOT SPECIFIED | FET General Purpose Power | 42A | Single | 600V | 300W Tc | N-Channel | 3060pF @ 100V | 70m Ω @ 21A, 10V | 4V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP38N60E-GE3 | Vishay Siliconix | $10.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp38n60ege3-datasheets-2323.pdf | TO-220-3 | 14 Weeks | 600V | 313W Tc | N-Channel | 3600pF @ 100V | 65m Ω @ 19A, 10V | 4V @ 250μA | 43A Tc | 183nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP20N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp20n65m5-datasheets-2124.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 168MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STP20N | Single | 130W | 1 | 43 ns | 7.5ns | 7.5 ns | 43 ns | 18A | 25V | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 72A | 270 mJ | 650V | N-Channel | 1345pF @ 100V | 190m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| AUIRLS8409-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/infineontechnologies-auirls84097p-datasheets-2129.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 13 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 240A | 40V | 375W Tc | N-Channel | 16488pF @ 25V | 0.75m Ω @ 100A, 10V | 2.4V @ 250μA | 240A Tc | 266nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP32D9UFZ-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp32d9ufz7b-datasheets-1528.pdf | 3-XFDFN | 3 | 15 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 3.1 ns | 2.3ns | 10.5 ns | 19.9 ns | 200mA | 10V | SILICON | DRAIN | SWITCHING | 30V | 390mW Ta | 0.2A | 5Ohm | -30V | P-Channel | 22.5pF @ 15V | 5 Ω @ 100mA, 4.5V | 1V @ 250μA | 200mA Ta | 0.35nC @ 4.5V | 1.2V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| STP160N75F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb160n75f3-datasheets-0330.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 4MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP160 | 3 | Single | 330W | 1 | FET General Purpose Power | 22 ns | 65ns | 15 ns | 100 ns | 120A | 20V | SILICON | SWITCHING | 4V | 330W Tc | TO-220AB | 480A | 75V | N-Channel | 6750pF @ 25V | 4m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 85nC @ 10V | 10V | ±20V |
