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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPA60R520E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa60r520e6xksa1-datasheets-5529.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 12 ns | 10ns | 9 ns | 75 ns | 8.1A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 29W Tc | TO-220AB | 22A | 0.52Ohm | N-Channel | 512pF @ 100V | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMC6296 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 165.33333mg | No SVHC | 8 | yes | Single | 2.1W | 1 | 10 ns | 3ns | 8 ns | 27 ns | 11.5A | 20V | 1.8V | 900mW Ta 2.1W Tc | 30V | N-Channel | 2141pF @ 15V | 1.8 V | 10.5m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 19nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK754R0-40C,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk754r040c127-datasheets-5380.pdf | TO-220-3 | compliant | 3 | 40V | 203W Tc | N-Channel | 5708pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 97nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK763R6-40C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-buk763r640c118-datasheets-5355.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 40 ns | 95ns | 92 ns | 129 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 203W Tc | 668A | 292 mJ | N-Channel | 5708pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 97nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD60R750E6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/infineontechnologies-ipd60r750e6btma1-datasheets-5371.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 48W Tc | 15.7A | 0.75Ohm | 72 mJ | N-Channel | 373pF @ 100V | 750m Ω @ 2A, 10V | 3.5V @ 170μA | 5.7A Tc | 17.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PSMN017-30LL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 30V | 37W Tc | 15A | N-Channel | 526pF @ 15V | 17m Ω @ 5A, 10V | 2.15V @ 1mA | 15A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR6225PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr6225trpbf-datasheets-8439.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | No SVHC | 3 | EAR99 | No | Single | 63W | 9.7 ns | 37ns | 52 ns | 63 ns | 100A | 12V | 800mV | 63W Tc | 53 ns | 20V | N-Channel | 3770pF @ 10V | 800 mV | 4m Ω @ 21A, 4.5V | 1.1V @ 50μA | 100A Tc | 72nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLHM620TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlhm620trpbf-datasheets-8336.pdf | 8-VQFN Exposed Pad | 3.2766mm | 900μm | 3.3mm | No SVHC | 8 | No | 2.7W | 1 | 2.7W | 1 | 150°C | PQFN (3x3) | 3.62nF | 7.5 ns | 25ns | 37 ns | 57 ns | 26A | 12V | 20V | 800mV | 62 ns | 1.8mOhm | 20V | N-Channel | 3620pF @ 10V | 800 mV | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50μA | 26A Ta 40A Tc | 78nC @ 4.5V | 2.5 mΩ | |||||||||||||||||||||||||||||||||||||||||
| PSMN013-30LL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 30V | 41W Tc | 21A | N-Channel | 768pF @ 15V | 13m Ω @ 5A, 10V | 2.15V @ 1mA | 21A Tc | 12.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R5-30LL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 30V | 71W Tc | 40A | N-Channel | 2061pF @ 15V | 3.6m Ω @ 10A, 10V | 2.15V @ 1mA | 40A Tc | 37nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y54-75B,115 | NXP USA Inc. | $3.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7y5475b115-datasheets-5336.pdf | SC-100, SOT-669 | not_compliant | 4 | 75V | 59W Tc | N-Channel | 803pF @ 25V | 54m Ω @ 10A, 10V | 4V @ 1mA | 21.4A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R8-30LL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn5r830ll115-datasheets-5476.pdf | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 30V | 55W Tc | 40A | N-Channel | 1316pF @ 15V | 5.8m Ω @ 10A, 10V | 2.15V @ 1mA | 40A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK724R5-30C,118 | Nexperia USA Inc. | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk724r530c118-datasheets-5499.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | not_compliant | 3 | 30V | 157W Tc | N-Channel | 3760pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF19N20CYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack, Formed Leads | 2.565g | 3 | No | Single | 43W | 1 | 15 ns | 150ns | 115 ns | 135 ns | 19A | 30V | 200V | 43W Tc | N-Channel | 1080pF @ 25V | 170m Ω @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R750E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r750e6xksa1-datasheets-5339.pdf | TO-220-3 | 3 | 12 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 48W Tc | TO-220AB | 15.7A | 0.75Ohm | 72 mJ | N-Channel | 373pF @ 100V | 750m Ω @ 2A, 10V | 3.5V @ 170μA | 5.7A Tc | 17.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK7Y35-55B,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7y3555b115-datasheets-5344.pdf | SC-100, SOT-669 | not_compliant | 4 | 55V | 60W Tc | N-Channel | 781pF @ 25V | 35m Ω @ 15A, 10V | 4V @ 1mA | 28.43A Tc | 13.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN014-60LS,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 60V | 65W Tc | 40A | N-Channel | 1264pF @ 30V | 14m Ω @ 10A, 10V | 4V @ 1mA | 40A Tc | 19.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R600E6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd65r600e6btma1-datasheets-5361.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 63W Tc | 18A | 0.6Ohm | 142 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP65R280E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp65r280e6xksa1-datasheets-5258.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 11 ns | 9ns | 76 ns | 13.8A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104W Tc | TO-220AB | 0.28Ohm | 290 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP65R380E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp65r380e6xksa1-datasheets-5263.pdf | TO-220-3 | Lead Free | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 83W | 1 | Not Qualified | R-PSFM-T3 | 10 ns | 7ns | 8 ns | 57 ns | 10.6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 83W Tc | TO-220AB | 29A | 0.38Ohm | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPP60R600E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r600e6xksa1-datasheets-5268.pdf | TO-220-3 | 3 | 14 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 63W Tc | TO-220AB | 19A | 0.6Ohm | 133 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD60R1K4C6 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd60r1k4c6-datasheets-5273.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 28.4W Tc | 3.2A | 8A | 26 mJ | N-Channel | 200pF @ 100V | 1.4 Ω @ 1.1A, 10V | 3.5V @ 90μA | 3.2A Tc | 9.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDPF5N50TYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdpf5n50tydtu-datasheets-5283.pdf | TO-220-3 Full Pack, Formed Leads | 2.565g | 3 | No | Single | 13 ns | 22ns | 20 ns | 28 ns | 5A | 30V | 500V | 28W Tc | N-Channel | 640pF @ 25V | 1.4 Ω @ 2.5A, 10V | 5V @ 250μA | 5A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1072X-T1-GE3 | Vishay Siliconix | $5.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1072xt1e3-datasheets-7794.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | Single | 40 | 1 | FET General Purpose Powers | 31ns | 31 ns | 9 ns | 1.3A | 20V | SILICON | SWITCHING | 30V | 30V | 236mW Ta | 0.093Ohm | N-Channel | 280pF @ 15V | 93m Ω @ 1.3A, 10V | 3V @ 250μA | 8.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP60R520E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipp60r520e6xksa1-datasheets-5287.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | 3 | 12 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | NO | 3 | Single | 66W | 1 | 12 ns | 10ns | 9 ns | 75 ns | 8.1A | 20V | SILICON | SWITCHING | 600V | 66W Tc | TO-220AB | 22A | 0.52Ohm | 650V | N-Channel | 512pF @ 100V | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSC0908NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-bsc0908nsatma1-datasheets-5231.pdf | 8-PowerTDFN | 5 | no | EAR99 | compliant | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34V | 34V | 2.5W Ta 30W Tc | 14A | 200A | 0.0127Ohm | 10 mJ | N-Channel | 1220pF @ 15V | 8m Ω @ 30A, 10V | 2.2V @ 250μA | 14A Ta 49A Tc | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD60R3K3C6 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd60r3k3c6atma1-datasheets-9888.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 18.1W Tc | 1.7A | 4A | 6 mJ | N-Channel | 93pF @ 100V | 3.3 Ω @ 500mA, 10V | 3.5V @ 40μA | 1.7A Tc | 4.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD60R450E6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r450e6btma1-datasheets-5327.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 74W Tc | 26A | 0.45Ohm | 185 mJ | N-Channel | 620pF @ 100V | 450m Ω @ 3.4A, 10V | 3.5V @ 280μA | 9.2A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQA28N50_F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqa28n50-datasheets-5727.pdf | TO-3P-3, SC-65-3 | TO-3P | 500V | 310W Tc | N-Channel | 5600pF @ 25V | 160mOhm @ 14.2A, 10V | 5V @ 250μA | 28.4A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5414NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 9 Weeks | 4 | LIFETIME (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 58ns | 69 ns | 47 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 55W Tc | 75A | 0.037Ohm | N-Channel | 1200pF @ 25V | 37m Ω @ 24A, 10V | 4V @ 250μA | 24A Tc | 48nC @ 10V | 10V | ±20V |
