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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK624R5-30C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk624r530c118-datasheets-3751.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 158W Tc | 90A | 543A | 0.0075Ohm | 271 mJ | N-Channel | 4707pF @ 25V | 4.5m Ω @ 25A, 10V | 2.8V @ 1mA | 90A Tc | 78nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTD4970NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/onsemiconductor-ntd4970n35g-datasheets-2491.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 2.55W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 27.6ns | 5.7 ns | 12.5 ns | 11.6A | 20V | SILICON | DRAIN | SWITCHING | 1.38W Ta 24.6W Tc | 8.5A | 30V | N-Channel | 774pF @ 15V | 11m Ω @ 30A, 10V | 2.5V @ 250μA | 8.5A Ta 36A Tc | 8.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK6610-75C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | /files/nexperiausainc-buk661075c118-datasheets-3795.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 158W | 1 | R-PSSO-G2 | 18 ns | 40ns | 80 ns | 165 ns | 78A | 16V | 75V | SILICON | DRAIN | SWITCHING | 158W Tc | 75V | N-Channel | 5251pF @ 25V | 10m Ω @ 25A, 10V | 2.8V @ 1mA | 78A Tc | 81nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN8R0-30YL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 30V | 56W Tc | N-Channel | 1005pF @ 15V | 8.3m Ω @ 15A, 10V | 2.15V @ 1mA | 62A Tc | 18.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6209-30C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | /files/nexperiausainc-buk620930c118-datasheets-3820.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 80W | 1 | 9.2 ns | 23ns | 31.3 ns | 45.5 ns | 50A | 16V | 30V | 80W Tc | 30V | N-Channel | 1760pF @ 25V | 9.8m Ω @ 12A, 10V | 2.8V @ 1mA | 50A Tc | 30.5nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMR400UN,115 | NXP USA Inc. | $16.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmr400un115-datasheets-3805.pdf | SC-75, SOT-416 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 530mW Tc | 0.8A | 0.48Ohm | N-Channel | 43pF @ 25V | 480m Ω @ 200mA, 4.5V | 1V @ 250μA | 800mA Tc | 0.89nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK6228-55C,118 | Nexperia USA Inc. | $1.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk622855c118-datasheets-3838.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 60W | 6.6 ns | 21.9ns | 10.6 ns | 22.5 ns | 31A | 20V | 55V | 60W Tc | 55V | N-Channel | 1340pF @ 25V | 29m Ω @ 10A, 10V | 2.8V @ 1mA | 31A Tc | 20.2nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTD6N20ET5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtd6n20et4-datasheets-6415.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1.75W Ta 50W Tc | 6A | 18A | 0.7Ohm | 54 mJ | N-Channel | 480pF @ 25V | 700m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN011-30YL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 30V | 49W Tc | N-Channel | 726pF @ 15V | 10.7m Ω @ 15A, 10V | 2.15V @ 1mA | 51A Tj | 14.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R9-30YL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 30V | 63W Tc | N-Channel | 1226pF @ 15V | 6.1m Ω @ 20A, 10V | 2.15V @ 1mA | 78A Tc | 21.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS5835NLR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/onsemiconductor-ntms5835nlr2g-datasheets-3704.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | Unknown | 8 | OBSOLETE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 8 | Single | 1.5W | 1 | FET General Purpose Power | 15 ns | 45ns | 9 ns | 22 ns | 9.2A | 20V | SILICON | 1.85V | 1.5W Ta | 40V | N-Channel | 2115pF @ 20V | 1.85 V | 10m Ω @ 10A, 10V | 3V @ 250μA | 9.2A Ta | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PMR280UN,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmr280un115-datasheets-3483.pdf | SC-75, SOT-416 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 530mW Tc | 0.98A | 0.34Ohm | N-Channel | 45pF @ 20V | 340m Ω @ 200mA, 4.5V | 1V @ 250μA | 980mA Tc | 0.89nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y30-75B/C2,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk9y3075bc2115-datasheets-3649.pdf | SC-100, SOT-669 | 75V | N-Channel | 2070pF @ 25V | 28m Ω @ 15A, 10V | 2V @ 1mA | 34A | 19nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLHS2242TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-irlhs2242trpbf-datasheets-6771.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | Lead Free | No SVHC | 6 | No | 2.1W | Single | 2.1W | 1 | 6-PQFN (2x2) | 870pF | 7.9 ns | 54ns | 66 ns | 54 ns | 7.2A | 12V | 20V | -800mV | 41 ns | 31mOhm | -20V | P-Channel | 877pF @ 10V | -800 mV | 31mOhm @ 8.5A, 4.5V | 1.1V @ 10μA | 7.2A Ta 15A Tc | 12nC @ 10V | 31 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| PMF290XN,115 | NXP USA Inc. | $17.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | SC-70, SOT-323 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 560mW Tc | 1A | 0.35Ohm | N-Channel | 34pF @ 20V | 350m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 1A Tc | 0.72nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8052-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | unknown | 20A | 40V | 1.6W Ta 30W Tc | N-Channel | 2110pF @ 10V | 11.3m Ω @ 10A, 10V | 2.3V @ 200μA | 20A Ta | 25nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N04-37P-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0437pt4e3-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 37mOhm | 8A | 40V | 2W Ta 10.8W Tc | N-Channel | 640pF @ 20V | 37m Ω @ 5A, 10V | 2.5V @ 250μA | 5.4A Ta 8A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4923NET3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4923net1g-datasheets-8933.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | CONSULT SALES OFFICE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 930mW | 1 | Not Qualified | 91A | 20V | SILICON | DRAIN | SWITCHING | 930mW Ta 48W Tc | 12.7A | 0.0048Ohm | 30V | N-Channel | 4850pF @ 15V | 3.3m Ω @ 30A, 10V | 2V @ 250μA | 12.7A Ta 91A Tc | 22nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTMFS4827NET1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4827net3g-datasheets-3667.pdf | 8-PowerTDFN, 5 Leads | 5 | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | 58.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 870mW Ta 38.5W Tc | 8.8A | 0.0108Ohm | N-Channel | 1400pF @ 12V | 6.95m Ω @ 30A, 10V | 2.5V @ 250μA | 8.8A Ta 58.5A Tc | 16nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI8405DB-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8405dbt1e1-datasheets-6204.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | 4 | No | 1 | Single | 2.77W | 4-Microfoot | 16 ns | 32ns | 32 ns | 120 ns | -3.6A | 8V | 12V | 1.47W Ta | 55mOhm | -12V | P-Channel | 55mOhm @ 1A, 4.5V | 950mV @ 250μA | 3.6A Ta | 21nC @ 4.5V | 55 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS5838NLR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/onsemiconductor-ntms5838nlr2g-datasheets-3688.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 8 | Single | 1.5W | 1 | FET General Purpose Power | 11 ns | 23ns | 4 ns | 17 ns | 5.8A | 20V | SILICON | 1.5W Ta | 7.5A | 40V | N-Channel | 785pF @ 20V | 25m Ω @ 7A, 10V | 3V @ 250μA | 5.8A Ta | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMFS4827NET3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4827net3g-datasheets-3667.pdf | 8-PowerTDFN, 5 Leads | 5 | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | 58.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 870mW Ta 38.5W Tc | 8.8A | 0.0108Ohm | N-Channel | 1400pF @ 12V | 6.95m Ω @ 30A, 10V | 2.5V @ 250μA | 8.8A Ta 58.5A Tc | 16nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7860DP-T1-GE3 | Vishay Siliconix | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7860dpt1ge3-datasheets-3692.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 18 ns | 12ns | 19 ns | 46 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 45 mJ | 30V | N-Channel | 8m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK9Y19-55B/C2,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk9y1955b115-datasheets-1265.pdf | SC-100, SOT-669 | 4 | Tin | 18 ns | 180ns | 134 ns | 44 ns | 46A | 15V | 55V | N-Channel | 1992pF @ 25V | 17.3m Ω @ 20A, 10V | 2V @ 1mA | 18nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP110,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-bsp110115-datasheets-3529.pdf | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 4.535924g | No SVHC | 10Ohm | 3 | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 4 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-PDSO-G4 | 520mA | 20V | 100V | SILICON | DRAIN | SWITCHING | 2V | 6.25W Tc | 6 pF | 100V | N-Channel | 40pF @ 10V | 10 Ω @ 150mA, 5V | 2V @ 1mA | 520mA Tc | 5V | ±20V | ||||||||||||||||||||||||||||||||||||
| JANTX2N6804 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/562 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n6804-datasheets-3638.pdf | TO-204AA, TO-3 | 3 | No | TO-204AA | 60 ns | 140ns | 140 ns | 140 ns | 11A | 20V | 100V | 4W Ta 75W Tc | P-Channel | 360mOhm @ 11A, 10V | 4V @ 250μA | 11A Tc | 29nC @ 10V | 360 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH8337TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfh8337tr2pbf-datasheets-3420.pdf | 8-PowerTDFN | Lead Free | 5 | 17 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 3.2W | 1 | FET General Purpose Power | R-PDSO-F5 | 6.4 ns | 12ns | 4.1 ns | 5.7 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.2W Ta 27W Tc | 65A | 30V | N-Channel | 790pF @ 10V | 1.8 V | 12.8m Ω @ 16.2A, 10V | 2.35V @ 25μA | 12A Ta 35A Tc | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUP40N10-30-GE3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 1 | 11 ns | 12ns | 12 ns | 30 ns | 38.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 3.1W Ta 89W Tc | TO-220AB | 75A | 61 mJ | N-Channel | 2400pF @ 25V | 30m Ω @ 15A, 10V | 4V @ 250μA | 38.5A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFH8325TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh8325trpbf-datasheets-4982.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | Lead Free | No SVHC | 5MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | PQFN (5x6) | 2.487nF | 12 ns | 16ns | 7.1 ns | 14 ns | 21A | 20V | 30V | 1.8V | 24 ns | 5mOhm | 30V | N-Channel | 2487pF @ 10V | 1.8 V | 5mOhm @ 20A, 10V | 2.35V @ 50μA | 21A Ta 82A Tc | 32nC @ 10V | 5 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SUP65P04-15-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup65p0415e3-datasheets-3513.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | Other Transistors | 15 ns | 380ns | 140 ns | 75 ns | -65A | 20V | SILICON | DRAIN | -3V | 3.75W Ta 120W Tc | TO-220AB | 240A | 40V | P-Channel | 5400pF @ 25V | -3 V | 15m Ω @ 30A, 10V | 3V @ 250μA | 65A Tc | 130nC @ 10V | 4.5V 10V | ±20V |
