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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP086N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2014 | /files/infineontechnologies-ipp086n10n3ghksa1-datasheets-8293.pdf | TO-220-3 | 100V | 125W Tc | N-Channel | 3980pF @ 50V | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6444-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch6444tlh-datasheets-4192.pdf | 6-SMD, Flat Leads | Lead Free | No SVHC | 88 | yes | 4.2 ns | 4.7ns | 5.7 ns | 15 ns | 2.5A | 20V | 35V | 2.6V | 800mW Ta | N-Channel | 186pF @ 20V | 98m Ω @ 1.5A, 10V | 2.6V @ 1mA | 2.5A Ta | 4nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP045N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp045n10n3ghksa1-datasheets-8303.pdf | TO-220-3 | Lead Free | 3 | No | PG-TO220-3 | 8.41nF | 27 ns | 59ns | 14 ns | 48 ns | 100A | 20V | 100V | 214W Tc | 4.2mOhm | 100V | N-Channel | 8410pF @ 50V | 4.5mOhm @ 100A, 10V | 3.5V @ 150μA | 100A Tc | 117nC @ 10V | 4.5 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTY8N65X2 | IXYS | $2.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 8A | 650V | 150W Tc | N-Channel | 800pF @ 25V | 500m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA50JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | TO-263 | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 64-4123PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | DPAK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN63D1L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn63d1l13-datasheets-7298.pdf | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 380mA | 60V | 370mW Ta | N-Channel | 30pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 380mA Ta | 0.3nC @ 4.5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R199CPHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50r199cpxksa1-datasheets-8108.pdf | TO-220-3 | PG-TO220-3-1 | 550V | 139W Tc | N-Channel | 1800pF @ 100V | 199mOhm @ 9.9A, 10V | 3.5V @ 660μA | 17A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP030N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi030n10n3gxksa1-datasheets-9710.pdf | TO-220-3 | 300W | 1 | PG-TO220-3 | 14.8nF | 34 ns | 58ns | 28 ns | 84 ns | 100A | 20V | 100V | 300W Tc | N-Channel | 14800pF @ 50V | 3mOhm @ 100A, 10V | 3.5V @ 275μA | 100A Tc | 206nC @ 10V | 3 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP12CN10NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cn10ngxksa1-datasheets-8255.pdf | TO-220-3 | 3 | EAR99 | FAST SWITCHING | unknown | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | TO-220AB | 67A | 268A | 0.0129Ohm | 154 mJ | N-Channel | 4320pF @ 50V | 12.9m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP057N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp057n08n3ghksa1-datasheets-8258.pdf | TO-220-3 | 3 | EAR99 | SINGLE | 150W | 1 | FET General Purpose Power | R-PSFM-T3 | 18 ns | 66ns | 10 ns | 38 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150W Tc | TO-220AB | 320A | 0.0057Ohm | 80V | N-Channel | 4750pF @ 40V | 5.7m Ω @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 69nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SCH1337-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-sch1337tlh-datasheets-4268.pdf | SOT-563, SOT-666 | Lead Free | 4 Weeks | No SVHC | 6 | 4.5 ns | 4.2ns | 10.6 ns | 20 ns | 2A | 20V | 30V | -2.6V | 800mW Ta | P-Channel | 172pF @ 10V | 150m Ω @ 1A, 10V | 2.6V @ 1mA | 2A Ta | 3.9nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP040N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp040n06n3ghksa1-datasheets-8164.pdf | TO-220-3 | PG-TO220-3 | 60V | 188W Tc | N-Channel | 11000pF @ 30V | 4mOhm @ 90A, 10V | 4V @ 90μA | 90A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3374-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | /files/onsemiconductor-mch3374tle-datasheets-7001.pdf | 3-SMD, Flat Lead | Lead Free | 6 Weeks | No SVHC | 70 | yes | 8.8 ns | 80ns | 50 ns | 41 ns | 3A | 8V | 12V | -1.4V | 1W Ta | P-Channel | 405pF @ 6V | 70m Ω @ 1.5A, 4.5V | 1.4V @ 1mA | 3A Ta | 5.6nC @ 4.5V | 1.8V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP093N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp093n06n3ghksa1-datasheets-8178.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | SINGLE | 1 | 15 ns | 40ns | 5 ns | 20 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 71W Tc | TO-220AB | 200A | N-Channel | 2900pF @ 30V | 9.3m Ω @ 50A, 10V | 4V @ 34μA | 50A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDMS9409-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms9409f085-datasheets-8182.pdf | 8-PowerTDFN | 172.8mg | 8 | LIFETIME (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 65A | 40V | 100W Tj | N-Channel | 3130pF @ 20V | 3.2m Ω @ 65A, 10V | 4V @ 250μA | 65A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3360-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-cph3360tlw-datasheets-8190.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | No SVHC | 3 | yes | Tin | unknown | e6 | DUAL | GULL WING | 1 | 4 ns | 3.3ns | 5.4 ns | 12 ns | 1.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -2.6V | 900mW Ta | P-Channel | 82pF @ 10V | 303m Ω @ 800mA, 10V | 2.6V @ 1mA | 1.6A Ta | 2.2nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIPC26N60S5X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2015 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R190P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r190p6atma1-datasheets-7997.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 20.2A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 151W Tc | 57A | 0.19Ohm | 419 mJ | N-Channel | 1750pF @ 100V | 190m Ω @ 7.6A, 10V | 4.5V @ 630μA | 20.2A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| MCH6331-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/onsemiconductor-mch6331tlh-datasheets-4167.pdf | 6-SMD, Flat Leads | Lead Free | 4 Weeks | No SVHC | 88 | yes | 5.4 ns | 12ns | 19 ns | 26 ns | 3.5A | 20V | 30V | -2.6V | 1.5W Ta | P-Channel | 250pF @ 10V | 98m Ω @ 1.5A, 10V | 2.6V @ 1mA | 3.5A Ta | 5nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP075N15N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi075n15n3gxksa1-datasheets-2038.pdf | TO-220-3 | 8 Weeks | No | 300W | 1 | PG-TO220-3 | 5.47nF | 25 ns | 35ns | 14 ns | 46 ns | 100A | 20V | 150V | 300W Tc | 7.2mOhm | 150V | N-Channel | 5470pF @ 75V | 7.5mOhm @ 100A, 10V | 4V @ 270μA | 100A Tc | 93nC @ 10V | 7.5 mΩ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP072N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp072n10n3ghksa1-datasheets-8220.pdf | TO-220-3 | 3 | No | PG-TO220-3 | 4.91nF | 19 ns | 37ns | 9 ns | 37 ns | 80A | 20V | 100V | 150W Tc | 7.2mOhm | 80V | N-Channel | 4910pF @ 50V | 7.2mOhm @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 68nC @ 10V | 7.2 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP052N06L3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp052n06l3gxksa1-datasheets-2713.pdf | TO-220-3 | PG-TO220-3 | 60V | 115W Tc | N-Channel | 8400pF @ 30V | 5mOhm @ 80A, 10V | 2.2V @ 58μA | 80A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp100n08n3ghksa1-datasheets-8247.pdf | TO-220-3 | 3 | EAR99 | No | SINGLE | 100W | 1 | R-PSFM-T3 | 14 ns | 46ns | 5 ns | 22 ns | 70A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 100W Tc | TO-220AB | 280A | 90 mJ | N-Channel | 2410pF @ 40V | 10m Ω @ 46A, 10V | 3.5V @ 46μA | 70A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP057N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp057n06n3ghksa1-datasheets-8144.pdf | TO-220-3 | 60V | 115W Tc | N-Channel | 6600pF @ 30V | 5.7m Ω @ 80A, 10V | 4V @ 58μA | 80A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R255P6AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/infineontechnologies-ipl60r255p6auma1-datasheets-7899.pdf | 4-PowerTSFN | Contains Lead | 4 | 12 Weeks | 4 | yes | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 15.9A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 126W Tc | 0.255Ohm | 352 mJ | N-Channel | 1450pF @ 100V | 255m Ω @ 6.4A, 10V | 4.5V @ 530μA | 15.9A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP052NE7N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp052ne7n3ghksa1-datasheets-8157.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | 3 | No | Single | PG-TO220-3 | 4.75nF | 14 ns | 11ns | 8 ns | 30 ns | 80A | 20V | 75V | 150W Tc | 5.2mOhm | 75V | N-Channel | 4750pF @ 37.5V | 5.2mOhm @ 80A, 10V | 3.8V @ 91μA | 80A Tc | 68nC @ 10V | 5.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP032N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp032n06n3ghksa1-datasheets-8160.pdf | TO-220-3 | No | 188W | 1 | PG-TO220-3 | 13nF | 35 ns | 120ns | 20 ns | 62 ns | 120A | 20V | 60V | 188W Tc | N-Channel | 13000pF @ 30V | 3.2mOhm @ 100A, 10V | 4V @ 118μA | 120A Tc | 165nC @ 10V | 3.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4004SPSQ-13 | Diodes Incorporated | $6.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth4004spsq13-datasheets-8063.pdf | 8-PowerTDFN | 5 | 7 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.6W Ta 167W Tc | 31A | 200A | 0.0027Ohm | 200 mJ | N-Channel | 4305pF @ 25V | 2.7m Ω @ 90A, 10V | 4V @ 250μA | 31A Ta 100A Tc | 68.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| DMN2400UFDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2400ufdq7-datasheets-8019.pdf | 3-PowerUDFN | 6 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 900mA | 20V | 400mW Ta | N-Channel | 37pF @ 16V | 600m Ω @ 200mA, 4.5V | 1V @ 250μA | 900mA Ta | 0.5nC @ 4.5V | 1.5V 4.5V | ±12V |
