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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFD113 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd113pbf-datasheets-5477.pdf | 4-DIP (0.300, 7.62mm) | 2 | 4 | EAR99 | unknown | DUAL | NOT SPECIFIED | 2 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDIP-T2 | 800mA | SILICON | DRAIN | SWITCHING | 60V | 60V | 1W Tc | 0.8A | 0.8Ohm | 25 pF | N-Channel | 200pF @ 25V | 800m Ω @ 800mA, 10V | 4V @ 250μA | 800mA Tc | 7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660-2 | Vishay Siliconix | $25.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | No | 725mW | 1 | TO-205AD (TO-39) | 50pF | 990mA | 20V | 60V | 725mW Ta 6.25W Tc | N-Channel | 50pF @ 25V | 3Ohm @ 1A, 10V | 2V @ 1mA | 990mA Tc | 3 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1004P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 15 Weeks | 14 | No | 2W | 4 | 460mA | 20V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR814DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir814dpt1ge3-datasheets-9493.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | EAR99 | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 6.25W | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-C5 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1V | 6.25W Ta 104W Tc | 0.0029Ohm | N-Channel | 3800pF @ 20V | 2.1m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 86nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-06AP-T4E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0306ape3-datasheets-0471.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | TO-252 | 3.8nF | 90A | 30V | 10W Ta 83W Tc | 5.7MOhm | N-Channel | 3800pF @ 15V | 5.7mOhm @ 20A, 10V | 2.4V @ 250μA | 90A Tc | 95nC @ 10V | 5.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1004P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | CDIP | 19.56mm | 3.05mm | 7.87mm | Lead Free | 14 | no | No | e0 | Tin/Lead (Sn/Pb) | 2W | 14 | 4 | 2W | FET General Purpose Power | 460mA | 20V | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 3.5Ohm | 60V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| VP1008B | Vishay Siliconix | $43.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | Contains Lead | 3 | 51 Weeks | 3 | EAR99 | No | e0 | TIN LEAD | BOTTOM | WIRE | 225 | 2 | 1 | Single | 30 | 1 | 11 ns | 30ns | 20 ns | 20 ns | 790mA | 20V | SILICON | DRAIN | SWITCHING | 6.25W Ta | 0.79A | 5Ohm | 25 pF | 100V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 790mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4752DY-T1-GE3 | Vishay Siliconix | $1.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4752dyt1ge3-datasheets-9507.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No SVHC | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 30 | 3W | 1 | 18 ns | 15ns | 8 ns | 25 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 3W Ta 6.25W Tc | 0.0055Ohm | 30V | N-Channel | 1700pF @ 15V | 5.5m Ω @ 10A, 10V | 2.2V @ 1mA | 25A Tc | 43nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| VP0808B | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | -280mA | TO-205AD, TO-39-3 Metal Can | 9 Weeks | 3 | No | e0 | Tin/Lead (Sn/Pb) | 2 | 1 | Single | 800mW | Other Transistors | 11 ns | 30ns | 20 ns | 20 ns | 880mA | 30V | 80V | 6.25W Ta | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661 | Vishay Siliconix | $16.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | Lead, Tin | No | 1 | Single | 6.25W | 1 | TO-39 | 50pF | 860mA | 20V | 90V | 725mW Ta 6.25W Tc | 4Ohm | 90V | N-Channel | 50pF @ 25V | 4Ohm @ 1A, 10V | 2V @ 1mA | 860mA Tc | 4 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTXP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishay-2n6661jtxp02-datasheets-9343.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 36 Weeks | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 2N6661JAN02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 860mA | 20V | 90V | 725mW Ta 6.25W Tc | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB30N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb30n60ee3-datasheets-9414.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.437803g | 3 | AVALANCHE RATED | No | GULL WING | 3 | 1 | Single | 250W | 1 | R-PSSO-G2 | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | SILICON | SWITCHING | 250W Tc | 65A | 690 mJ | 600V | N-Channel | 2600pF @ 100V | 125m Ω @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTXV02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | EAR99 | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW47N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n65ege3-datasheets-9424.pdf | TO-247-3 | 3 | 19 Weeks | 38.000013g | 3 | No | 1 | Single | 417W | 1 | 47 ns | 87ns | 103 ns | 156 ns | 47A | 20V | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AD | 0.072Ohm | N-Channel | 5682pF @ 100V | 72m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 273nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | Contains Lead | 3 | 26 Weeks | 4Ohm | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Lead, Tin | No | BOTTOM | WIRE | 2 | 1 | Single | 725mW | 1 | FET General Purpose Powers | 860mA | 20V | SILICON | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI8809EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8809edbt2e1-datasheets-9437.pdf | 4-XFBGA | Lead Free | 4 | 15 Weeks | 4 | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 30 | 500mW | 1 | Other Transistors | -2.6A | 8V | SILICON | SWITCHING | 20V | 20V | 500mW Ta | P-Channel | 90m Ω @ 1.5A, 4.5V | 900mV @ 250μA | 15nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9123 | Vishay Siliconix | $0.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | 4-DIP (0.300, 7.62mm) | Contains Lead | 3 | 639.990485mg | 4 | EAR99 | unknown | 1.3W | DUAL | 4 | 1 | Single | 1 | Not Qualified | R-PDIP-T3 | 1A | 4V | SILICON | DRAIN | 100V | TO-250AA | 0.8A | 0.8Ohm | -100V | P-Channel | 390pF @ 25V | 600m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | Lead Free | 3 | Tin | No | 1 | Single | 725mW | 1 | TO-39 | 50pF | 860mA | 20V | 90V | 725mW Ta 6.25W Tc | 4Ohm | 90V | N-Channel | 50pF @ 25V | 4Ohm @ 1A, 10V | 2V @ 1mA | 860mA Tc | 4 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTX02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | Contains Lead | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 3N164 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | 4 | no | Lead, Tin | unknown | e0 | Tin/Lead (Sn/Pb) | 8 | Single | 375mW | 1 | Other Transistors | 5 ns | 13ns | 25 ns | -50mA | 30V | 375mW Ta | 0.05A | -30V | P-Channel | 3.5pF @ 15V | 300 Ω @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3N163-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | Lead Free | Unknown | 250Ohm | 4 | Tin | No | 1 | Single | 375mW | TO-72 | 3.5pF | 5 ns | 13ns | 25 ns | -50mA | 30V | 40V | -2.5V | 375mW Ta | 250Ohm | -40V | P-Channel | 3.5pF @ 15V | -2.5 V | 250Ohm @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 250 Ω | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTX02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | Contains Lead | 3 | 3 | EAR99 | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PMF63UN,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmf63un115-datasheets-8944.pdf | SC-70, SOT-323 | 3 | 2013-06-14 00:00:00 | 20V | 275mW Ta 1.785W Tc | N-Channel | 185pF @ 10V | 74m Ω @ 1.8A, 4.5V | 1V @ 250μA | 1.8A Ta | 3.3nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA7628 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdma7628-datasheets-9396.pdf | 6-WDFN Exposed Pad | 2mm | 750μm | 2mm | 6 | 30mg | 6 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 1.9W | 1 | FET General Purpose Power | 9 ns | 11ns | 11 ns | 37 ns | 9.4A | 8V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 0.0145Ohm | 185 pF | 20V | N-Channel | 1680pF @ 10V | 14.5m Ω @ 9.4A, 4.5V | 1V @ 250μA | 9.4A Ta | 17.5nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SIB410DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sib410dkt1ge3-datasheets-9115.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 15 Weeks | 95.991485mg | Unknown | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 6 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | S-XDSO-C3 | 6 ns | 10ns | 10 ns | 20 ns | 9A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 2.5W Ta 13W Tc | 9A | 20A | 0.042Ohm | 30V | N-Channel | 560pF @ 15V | 42m Ω @ 3.8A, 4.5V | 1V @ 250μA | 9A Tc | 15nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SI4038DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4038dyt1ge3-datasheets-9275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 1 | 13 ns | 14ns | 10 ns | 14 ns | 42.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Ta 7.8W Tc | 0.0024Ohm | 40V | N-Channel | 4070pF @ 20V | 2.4m Ω @ 15A, 10V | 2.1V @ 250μA | 42.5A Tc | 87nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDD1600N10ALZD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/onsemiconductor-fdd1600n10alzd-datasheets-9147.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 6.73mm | 2.39mm | 6.22mm | 4 | 260.37mg | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | Single | 1 | FET General Purpose Power | R-PSSO-G4 | 7 ns | 2ns | 2 ns | 13 ns | 6.8A | 20V | SILICON | DRAIN | SWITCHING | 14.9W Tc | 0.16Ohm | 5.08 mJ | 100V | N-Channel | 225pF @ 50V | 160m Ω @ 3.4A, 10V | 2.8V @ 250μA | 6.8A Tc | 3.61nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| UPA2764T1A-E2-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2764t1ae2ay-datasheets-9335.pdf | 8-PowerVDFN | 16 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 8 | 1.5W | 1 | FET General Purpose Power | 47 ns | 160ns | 320 ns | 310 ns | 130A | 20V | Single | 30V | 1.5W Ta 83W Tc | N-Channel | 7930pF @ 10V | 2.45m Ω @ 35A, 4.5V | 130A Ta | 180nC @ 10V | 4.5V 10V | ±20V |
