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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT5014SLLG/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5014sllgtr-datasheets-1921.pdf | TO-247-3 | TO-247 | 3.261nF | 35A | 500V | 403W Tc | N-Channel | 3261pF @ 25V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 140 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6849U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/564 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6849u-datasheets-1922.pdf | 18-CLCC | No | Qualified | 6.5A | 20V | 100V | 800mW Ta 25W Tc | P-Channel | 320m Ω @ 6.5A, 10V | 4V @ 250μA | 6.5A Tc | 34.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6766 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 3 | EAR99 | Lead, Tin | unknown | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 4W Ta 150W Tc | 120A | 0.085Ohm | 500 mJ | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| JANTX2N6798U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | no | EAR99 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/557 | QUAD | NO LEAD | NOT SPECIFIED | 18 | NOT SPECIFIED | 1 | Qualified | R-CQCC-N15 | 50ns | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 200V | 200V | 800mW Ta 25W Tc | 22A | 0.42Ohm | 98 mJ | N-Channel | 420m Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 42.07nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| JANTX2N6784 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/556 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6782-datasheets-1736.pdf | TO-205AF Metal Can | 3 | EAR99 | RADIATION HARDENED | e0 | Tin/Lead (Sn/Pb) | MILITARY STANDARD (USA) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | O-MBCY-W3 | 2.25A | SILICON | SINGLE | DRAIN | SWITCHING | 200V | 200V | 800mW Ta 15W Tc | TO-39 | 9A | 1.5Ohm | N-Channel | 1.6 Ω @ 2.25A, 10V | 4V @ 250μA | 2.25A Tc | 8.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| JANTX2N6788U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788u-datasheets-1767.pdf | 18-CLCC | 15 | EAR99 | HIGH RELIABILTY | MIL-19500 | QUAD | NO LEAD | NOT SPECIFIED | 18/15 | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | R-CQCC-N15 | 70ns | 4.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 100V | 100V | 800mW Tc | 6A | 18A | 0.35Ohm | 76 mJ | N-Channel | 350m Ω @ 6A, 10V | 4V @ 250μA | 4.5A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| JANTX2N6790 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788-datasheets-1773.pdf | TO-205AF Metal Can | 3 | EAR99 | RADIATION HARDENED | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | O-MBCY-W3 | 3.5A | SILICON | SINGLE | DRAIN | SWITCHING | 200V | 200V | 800mW Tc | TO-39 | 14A | 0.8Ohm | N-Channel | 850m Ω @ 3.5A, 10V | 4V @ 250μA | 3.5A Tc | 14.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| JAN2N6804 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/562 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n6804-datasheets-3638.pdf | TO-204AA, TO-3 | 2 | 3 | no | EAR99 | HIGH RELIABILTY | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | 2 | 1 | Other Transistors | Qualified | O-MBFM-P2 | 60 ns | 140ns | 140 ns | 140 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 75W Tc | 50A | P-Channel | 360m Ω @ 11A, 10V | 4V @ 250μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| JAN2N6800U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | No | FET General Purpose Power | Qualified | 30 ns | 35ns | 35 ns | 35 ns | 3A | 20V | Single | 400V | 800mW Ta 25W Tc | 3A | N-Channel | 1.1 Ω @ 3A, 10V | 4V @ 250μA | 3A Tc | 34.75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N7225 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | EAR99 | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | MIL-19500/592 | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | 27.4A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 200V | 200V | 4W Ta 150W Tc | 110A | 0.1Ohm | 500 mJ | N-Channel | 105m Ω @ 27.4A, 10V | 4V @ 250μA | 27.4A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| JANTX2N7236U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/595 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7236u-datasheets-1807.pdf | TO-267AB | 3 | 3 | no | EAR99 | e0 | Tin/Lead (Sn/Pb) | DUAL | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 4W | 1 | Qualified | 18A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 4W Ta 125W Tc | 72A | 0.22Ohm | 500 mJ | P-Channel | 220m Ω @ 18A, 10V | 4V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| JANTX2N6798 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | 3 | no | EAR99 | HIGH RELIABILITY | Lead, Tin | not_compliant | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 800mW | 1 | FET General Purpose Power | Qualified | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 800mW Ta 25W Tc | 0.42Ohm | N-Channel | 420m Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 42.07nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| JAN2N6770 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 36 Weeks | no | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 4W | 1 | Qualified | O-MBFM-P2 | 190ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 4W Ta 150W Tc | TO-204AA | 48A | 0.4Ohm | 750 mJ | N-Channel | 300ns | 225ns | 500m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| JANTX2N6770 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | no | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 4W | 1 | FET General Purpose Powers | Qualified | O-MBFM-P2 | 190ns | 12A | 20V | SILICON | SINGLE | DRAIN | 500V | 500V | 4W Ta 150W Tc | TO-3 | 0.4Ohm | N-Channel | 500m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| JANTXV2N6756 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | no | EAR99 | RADIATION HARDENED | not_compliant | e0 | Tin/Lead (Sn/Pb) | MIL-19500/542 | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | O-MBFM-P2 | 14A | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 75W Tc | 30A | 0.18Ohm | N-Channel | 210m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| JANTX2N6796 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AD, TO-39-3 Metal Can | Contains Lead | 3 | 3 | no | EAR99 | HIGH RELIABILITY | Lead, Tin | not_compliant | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 800mW | 1 | Qualified | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 800mW Ta 25W Tc | TO-205AF | 8A | N-Channel | 195m Ω @ 8A, 10V | 4V @ 250μA | 8A Tc | 28.51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| JAN2N6796U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | yes | EAR99 | No | e4 | Gold (Au) - with Nickel (Ni) barrier | MIL-19500/557 | QUAD | 16 | 1 | Qualified | R-CQCC-N15 | 30 ns | 75ns | 45 ns | 40 ns | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 800mW Ta 25W Tc | 8A | 0.195Ohm | N-Channel | 195m Ω @ 8A, 10V | 4V @ 250μA | 8A Tc | 28.51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| JANTX2N6764 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 2 | EAR99 | Lead, Tin | not_compliant | e0 | Tin/Lead (Sn/Pb) | MIL-19500/543G | BOTTOM | PIN/PEG | 2 | 1 | Qualified | 190ns | 38A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 150W Tc | 0.055Ohm | 150 mJ | N-Channel | 65m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| JANTX2N7228 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | no | AVALANCHE RATED | No | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | 3 | 4W | 1 | FET General Purpose Powers | Qualified | S-MSFM-P3 | 12A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 500V | 500V | 4W Ta 150W Tc | 48A | 750 mJ | N-Channel | 515m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| JANTX2N6802 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-jantx2n6802-datasheets-9867.pdf | TO-205AF Metal Can | 3 | 3 | HIGH RELIABILITY | No | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 800mW | 1 | FET General Purpose Power | Qualified | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 800mW Ta 25W Tc | N-Channel | 1.6 Ω @ 2.5A, 10V | 4V @ 250μA | 2.5A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| JAN2N6790 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788-datasheets-1773.pdf | TO-205AF Metal Can | 3 | EAR99 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | WIRE | 1 | FET General Purpose Powers | Qualified | O-MBCY-W3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 800mW Tc | 14A | 0.8Ohm | N-Channel | 100ns | 90ns | 850m Ω @ 3.5A, 10V | 4V @ 250μA | 3.5A Tc | 14.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| JAN2N7227 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | HIGH RELIABILITY | No | 8541.29.00.95 | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 4W Ta 150W Tc | 56A | 0.415Ohm | 700 mJ | N-Channel | 415m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| JAN2N7228 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | HIGH RELIABILITY | No | 8541.29.00.95 | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 4W Ta 150W Tc | 48A | 0.515Ohm | 750 mJ | N-Channel | 515m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SSM3K301T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k301tte85lf-datasheets-1702.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | unknown | 1 | Single | FET General Purpose Powers | 18 ns | 14 ns | 3.5A | 12V | 700mW Ta | 20V | N-Channel | 320pF @ 10V | 56m Ω @ 2A, 4V | 3.5A Ta | 4.8nC @ 4V | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N7224 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | EAR99 | HIGH RELIABILITY | No | 8541.29.00.95 | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 4W Ta 150W Tc | 0.081Ohm | N-Channel | 81m Ω @ 34A, 10V | 4V @ 250μA | 34A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| JAN2N6782U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/556 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6784u-datasheets-1732.pdf | 18-CLCC | 15 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | QUAD | 18 | 1 | Qualified | R-CQCC-N15 | 3.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 100V | 100V | 800mW Ta 15W Tc | 0.61Ohm | N-Channel | 610m Ω @ 3.5A, 10V | 4V @ 250μA | 3.5A Tc | 8.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| JAN2N7236U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/595 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7236u-datasheets-1807.pdf | TO-267AB | 3 | 3 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | DUAL | 3 | 4W | 1 | Qualified | 18A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 4W Ta 125W Tc | 72A | 0.22Ohm | 500 mJ | P-Channel | 220m Ω @ 18A, 10V | 4V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| JANTX2N6796U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | 18 | no | EAR99 | HIGH RELIABILITY | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | MIL-19500/557 | QUAD | NO LEAD | NOT SPECIFIED | 16 | NOT SPECIFIED | 25W | 1 | Qualified | R-CQCC-N15 | 75ns | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 100V | 100V | 800mW Ta 25W Tc | 8A | 32A | 0.195Ohm | 134 mJ | N-Channel | 195m Ω @ 8A, 10V | 4V @ 250μA | 8A Tc | 28.51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| JANTX2N6766 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | Contains Lead | 2 | EAR99 | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 4W | 1 | FET General Purpose Powers | Qualified | O-MBFM-P2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| JANTX2N6901 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/570 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n6901-datasheets-1817.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | No | BOTTOM | WIRE | 2 | 8.33W | 1 | Qualified | 25 ns | 80ns | 80 ns | 45 ns | 1.69A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 8.33W Tc | N-Channel | 1.4 Ω @ 1.07A, 5V | 2V @ 1mA | 1.69A Tc | 5nC @ 5V | 5V | ±10V |
