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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Mfr |
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| SQD40131EL_GE3 | Vishay Siliconix | $2.86 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40131elge3-datasheets-1670.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 62W Tc | 9.5mOhm | P-Channel | 6600pF @ 25V | 11.5mOhm @ 30A, 10V | 2.5V @ 250μA | 50A Tc | 115nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7386DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7386dpt1ge3-datasheets-7400.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 12 ns | 9ns | 10 ns | 35 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.8W Ta | 50A | 32 mJ | 30V | N-Channel | 7m Ω @ 19A, 10V | 2.5V @ 250μA | 12A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||
| SIR164DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir164dpt1re3-datasheets-0464.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.2MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 69W | 1 | FET General Purpose Power | R-PDSO-C5 | 35 ns | 41ns | 39 ns | 52 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.2V | 5.2W Ta 69W Tc | 33.3A | 70A | 30V | N-Channel | 3950pF @ 15V | 2.5m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 123nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||
| SI7421DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7421dnt1e3-datasheets-6759.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 10 ns | 13ns | 42 ns | 57 ns | -9.8A | 20V | SILICON | DRAIN | SWITCHING | 30V | -3V | 1.5W Ta | 6.4A | 30A | 0.025Ohm | -30V | P-Channel | 25m Ω @ 9.8A, 10V | 3V @ 250μA | 6.4A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SI7119DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7119dnt1ge3-datasheets-4330.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 1.05Ohm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 9 ns | 11ns | 12 ns | 27 ns | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | 3.7W Ta 52W Tc | 5A | -200V | P-Channel | 666pF @ 50V | 1.05 Ω @ 1A, 10V | 4V @ 250μA | 3.8A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||
| SI4848DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4848dyt1e3-datasheets-7754.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 85mOhm | 8 | yes | EAR99 | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | 9 ns | 10ns | 17 ns | 24 ns | 2.7A | 20V | SILICON | 2V | 1.5W Ta | 150V | N-Channel | 85m Ω @ 3.5A, 10V | 2V @ 250μA (Min) | 2.7A Ta | 21nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||
| IRLR120TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 270mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||
| SI9407BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si9407bdyt1ge3-datasheets-7869.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.4W | 1 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 3.2A | 20V | SILICON | SWITCHING | 60V | 5W Tc | 4.7A | -60V | P-Channel | 600pF @ 30V | 120m Ω @ 3.2A, 10V | 3V @ 250μA | 4.7A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SIR606DP-T1-GE3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir606dpt1ge3-datasheets-2395.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100V | 44.5W Tc | N-Channel | 1360pF @ 50V | 16.2m Ω @ 15A, 10V | 3.6V @ 250μA | 37A Tc | 22nC @ 6V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4164DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4164dyt1ge3-datasheets-2194.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 3.2MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 3W | 1 | 35 ns | 16ns | 16 ns | 48 ns | 30A | 20V | SILICON | SWITCHING | 30V | 30V | 2.5V | 3W Ta 6W Tc | N-Channel | 3545pF @ 15V | 3.2m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SISS64DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss64dnt1ge3-datasheets-1951.pdf | PowerPAK® 1212-8S | 1.17mm | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 4.8W | 1 | 150°C | S-PDSO-N5 | 13 ns | 25 ns | 37A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 57W Tc | 40A | 0.00286Ohm | 45 mJ | 30V | N-Channel | 3420pF @ 15V | 2.1m Ω @ 10A, 10V | 2.2V @ 250μA | 40A Tc | 68nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||
| SQJB46ELP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
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| SQJB46EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
- | Vishay Siliconix |
