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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7160DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7160dpt1ge3-datasheets-0207.pdf | PowerPAK® SO-8 | 5 | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 5W | 1 | R-PDSO-C5 | 29 ns | 115ns | 21 ns | 43 ns | 20A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 27.7W Tc | 60A | 20 mJ | 30V | N-Channel | 2970pF @ 15V | 8.7m Ω @ 15A, 10V | 2.5V @ 250μA | 20A Tc | 66nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| SIB412DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib412dkt1e3-datasheets-6377.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 95.991485mg | 34mOhm | 6 | 1 | Single | 2.4W | PowerPAK® SC-75-6L Single | 535pF | 6.6 ns | 16ns | 14 ns | 50 ns | -4.5A | 8V | 20V | 20V | 2.4W Ta 13W Tc | 34mOhm | 20V | N-Channel | 535pF @ 10V | -1.5 V | 34mOhm @ 6.6A, 4.5V | 1V @ 250μA | 9A Tc | 10.16nC @ 5V | 34 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI7102DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7102dnt1ge3-datasheets-0197.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 15 Weeks | Unknown | 3.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.8W | 1 | FET General Purpose Powers | S-XDSO-C5 | 27 ns | 125ns | 12 ns | 53 ns | 35A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 3.8W Ta 52W Tc | 25A | 60A | 12V | N-Channel | 3720pF @ 6V | 400 mV | 3.8m Ω @ 15A, 4.5V | 1V @ 250μA | 35A Tc | 110nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||
| SI7194DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7194dpt1ge3-datasheets-0232.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 15 Weeks | 506.605978mg | 8 | No | 1 | PowerPAK® SO-8 | 6.59nF | 46 ns | 25ns | 40 ns | 72 ns | 60A | 20V | 25V | 5.4W Ta 83W Tc | 2mOhm | 25V | N-Channel | 6590pF @ 15V | 2mOhm @ 20A, 10V | 2.6V @ 250μA | 60A Tc | 145nC @ 10V | 2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI7718DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7718dnt1ge3-datasheets-0243.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Powers | S-XDSO-C5 | 22 ns | 13ns | 12 ns | 26 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 3.7W Ta 52W Tc | 70A | 0.006Ohm | 20 mJ | 30V | N-Channel | 1600pF @ 15V | 6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SI7196DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | WFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7196dpt1ge3-datasheets-0247.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 30 | 5W | 1 | R-PDSO-C5 | 21 ns | 12ns | 12 ns | 22 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5W Ta 41.6W Tc | 50A | 20 mJ | 30V | N-Channel | 1577pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 16A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIA408DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sia408djt1ge3-datasheets-0264.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 15 Weeks | Unknown | 36mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 6 | 1 | Single | 40 | 3.4W | 1 | FET General Purpose Power | S-XDSO-C3 | 10 ns | 10ns | 15 ns | 35 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 1.6V | 3.4W Ta 17.9W Tc | 20A | 30V | N-Channel | 830pF @ 15V | 1.6 V | 36m Ω @ 5.3A, 10V | 1.6V @ 250μA | 4.5A Tc | 24nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||
| SI7802DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7802dnt1e3-datasheets-6209.pdf | PowerPAK® 1212-8 | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 21 ns | 1.24A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 1.5W Ta | 8A | 0.435Ohm | 0.3 mJ | 250V | N-Channel | 435m Ω @ 1.95A, 10V | 3.6V @ 250μA | 1.24A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI7405BDN-T1-GE3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7405bdnt1ge3-datasheets-0240.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 15 Weeks | 13mOhm | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 3.6W | 1 | Other Transistors | S-XDSO-C5 | 22 ns | 60ns | 45 ns | 80 ns | -16A | 8V | SILICON | DRAIN | SWITCHING | 12V | 3.6W Ta 33W Tc | 40A | -12V | P-Channel | 3500pF @ 6V | 13m Ω @ 13.5A, 4.5V | 1V @ 250μA | 16A Tc | 115nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI7758DP-T1-GE3 | Vishay Siliconix | $0.20 |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7758dpt1ge3-datasheets-0294.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | 2.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 53 ns | 25ns | 30 ns | 56 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 6.25W Ta 104W Tc | 30V | N-Channel | 7150pF @ 15V | 2.9m Ω @ 20A, 10V | 2.7V @ 250μA | 60A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SI7784DP-T1-GE3 | Vishay Siliconix | $7.51 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7784dpt1ge3-datasheets-0268.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | Unknown | 6mOhm | 8 | No | 1 | Single | 5W | 1 | PowerPAK® SO-8 | 1.6nF | 22 ns | 13ns | 12 ns | 26 ns | 35A | 20V | 30V | 2.5V | 5W Ta 27.7W Tc | 6.5mOhm | 30V | N-Channel | 1600pF @ 15V | 6mOhm @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 45nC @ 10V | 6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7601DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7601dnt1ge3-datasheets-0272.pdf | PowerPAK® 1212-8 | 8 | Single | PowerPAK® 1212-8 | 1.87nF | 18 ns | 112ns | 80 ns | 53 ns | -16A | 12V | 20V | 3.8W Ta 52W Tc | 19mOhm | P-Channel | 1870pF @ 10V | 19.2mOhm @ 11A, 4.5V | 1.6V @ 250μA | 16A Tc | 27nC @ 5V | 19.2 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIB419DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib419dkt1ge3-datasheets-0341.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 95.991485mg | Unknown | 6 | 1 | 2.45W | 1 | PowerPAK® SC-75-6L Single | 562pF | 16 ns | 42ns | 9 ns | 28 ns | -9A | 8V | 12V | 12V | -1V | 2.45W Ta 13.1W Tc | 89mOhm | -12V | P-Channel | 562pF @ 6V | -1 V | 60mOhm @ 5.2A, 4.5V | 1V @ 250μA | 9A Tc | 11.82nC @ 5V | 60 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIB417DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib417dkt1ge3-datasheets-0352.pdf | PowerPAK® SC-75-6L | 3 | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 40 | 2.4W | 1 | Other Transistors | S-XDSO-N3 | 13 ns | 31ns | 18 ns | 35 ns | -9A | 5V | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 15A | 0.052Ohm | -8V | P-Channel | 675pF @ 4V | -1 V | 52m Ω @ 5.6A, 4.5V | 1V @ 250μA | 9A Tc | 12.75nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||
| SIB415DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib415dkt1ge3-datasheets-0356.pdf | PowerPAK® SC-75-6L | 3 | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 40 | 2.4W | 1 | Other Transistors | S-XDSO-N3 | 55ns | 10 ns | 14 ns | -9A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 0.087Ohm | -30V | P-Channel | 295pF @ 15V | -3 V | 87m Ω @ 4.17A, 10V | 3V @ 250μA | 9A Tc | 10.05nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIB414DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib414dkt1ge3-datasheets-0366.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 26mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 40 | 2.4W | 1 | FET General Purpose Power | S-XDSO-N3 | 7 ns | 13ns | 14 ns | 50 ns | 9A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 20A | 8V | N-Channel | 732pF @ 4V | 26m Ω @ 7.9A, 4.5V | 1V @ 250μA | 9A Tc | 14.03nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||
| SIA426DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia426djt1ge3-datasheets-0338.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 13 Weeks | Unknown | 6 | yes | EAR99 | Tin | No | e3 | DUAL | 260 | 6 | 1 | 40 | 3.5W | 1 | FET General Purpose Power | S-XDSO-N3 | 12 ns | 11ns | 11 ns | 27 ns | 4.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.5V | 3.5W Ta 19W Tc | 20A | 20V | N-Channel | 1020pF @ 10V | 1.5 V | 23.6m Ω @ 9.9A, 10V | 1.5V @ 250μA | 4.5A Tc | 27nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||
| SIB413DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib413dkt1ge3-datasheets-0345.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 95.991485mg | 75mOhm | 6 | 1 | 2.4W | PowerPAK® SC-75-6L Single | 357pF | 20.5 ns | 46ns | 6.5 ns | 20 ns | -9A | 12V | 20V | 20V | 2.4W Ta 13W Tc | 119mOhm | -20V | P-Channel | 357pF @ 10V | -1.5 V | 75mOhm @ 6.5A, 4.5V | 1.5V @ 250μA | 9A Tc | 7.63nC @ 5V | 75 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI7620DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7620dnt1ge3-datasheets-0229.pdf | PowerPAK® 1212-8 | 3.1496mm | 1.0668mm | 3.1496mm | Lead Free | 126MOhm | 8 | No | 3.8W | 1 | PowerPAK® 1212-8 | 600pF | 12 ns | 5ns | 5 ns | 15 ns | 13A | 20V | 150V | 3.8W Ta 5.2W Tc | 103mOhm | 150V | N-Channel | 600pF @ 75V | 126mOhm @ 3.6A, 10V | 4.5V @ 250μA | 13A Tc | 15nC @ 10V | 126 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIA419DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia419djt1ge3-datasheets-0334.pdf | PowerPAK® SC-70-6 | Lead Free | 3 | Unknown | 30MOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-XDSO-N3 | 46ns | 52 ns | 91 ns | -12A | 5V | SILICON | DRAIN | SWITCHING | 20V | -1V | 3.5W Ta 19W Tc | 8.8A | 30A | -20V | P-Channel | 1500pF @ 10V | -1 V | 30m Ω @ 5.9A, 4.5V | 850mV @ 250μA | 12A Tc | 29nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||
| SIA417DJ-T1-GE3 | Vishay Siliconix | $0.96 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia417djt1ge3-datasheets-0374.pdf | PowerPAK® SC-70-6 | Lead Free | 3 | Unknown | 23mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 15 ns | 25ns | 45 ns | 80 ns | -12A | 5V | SILICON | DRAIN | SWITCHING | -1V | 3.5W Ta 19W Tc | 30A | 8V | P-Channel | 1600pF @ 4V | -1 V | 23m Ω @ 7A, 4.5V | 1V @ 250μA | 12A Tc | 32nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||
| SIR472DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir472dpt1ge3-datasheets-0439.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 10 Weeks | 506.605978mg | Unknown | 12mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 16 ns | 12ns | 10 ns | 16 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.9W Ta 29.8W Tc | 50A | 24 mJ | 30V | N-Channel | 820pF @ 15V | 12m Ω @ 13.8A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SIR840DP-T1-GE3 | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | PowerPAK® SO-8 | 506.605978mg | 1 | PowerPAK® SO-8 | 30V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR476DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir476dpt1ge3-datasheets-0428.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-C5 | 50 ns | 31ns | 48 ns | 60 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 6.25W Ta 104W Tc | 45A | 25V | N-Channel | 6150pF @ 10V | 1.7m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 135nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SIA814DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sia814djt1ge3-datasheets-0370.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 61mOhm | 6 | yes | EAR99 | No | 260 | 6 | 40 | 1.9W | 1 | FET General Purpose Power | 12ns | 12 ns | 15 ns | 4.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.5V | 1.9W Ta 6.5W Tc | 30V | N-Channel | 340pF @ 10V | 1.5 V | 61m Ω @ 3.3A, 10V | 1.5V @ 250μA | 4.5A Tc | 11nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SIR496DP-T1-GE3 | Vishay Siliconix | $0.66 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir496dpt1ge3-datasheets-0443.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 21 ns | 13ns | 17 ns | 29 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 5W Ta 27.7W Tc | 70A | 0.0045Ohm | 20 mJ | 20V | N-Channel | 1570pF @ 10V | 4.5m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SIB800EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib800edkt1ge3-datasheets-0465.pdf | PowerPAK® SC-75-6L | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | Single | 40 | 1 | FET General Purpose Power | 20 ns | 12ns | 20 ns | 70 ns | 1.5A | 6V | SILICON | DRAIN | SWITCHING | 20V | 20V | 1.1W Ta 3.1W Tc | 0.225Ohm | N-Channel | 225m Ω @ 1.6A, 4.5V | 1V @ 250μA | 1.5A Tc | 1.7nC @ 4.5V | Schottky Diode (Isolated) | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||||
| SI1046X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1046xt1ge3-datasheets-0125.pdf | SC-89, SOT-490 | 3 | 420mOhm | yes | EAR99 | unknown | e3 | PURE MATTE TIN | DUAL | FLAT | 260 | 3 | Single | 30 | 250mW | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-F3 | 19ns | 19 ns | 76 ns | 606mA | 8V | SILICON | SWITCHING | 250mW Ta | 0.606A | 20V | N-Channel | 66pF @ 10V | 420m Ω @ 606mA, 4.5V | 950mV @ 250μA | 1.49nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIR892DP-T1-GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir892dpt1ge3-datasheets-0488.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 15 Weeks | 506.605978mg | Unknown | 3.2mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 30 ns | 18ns | 25 ns | 40 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2.6V | 5W Ta 50W Tc | 30A | 70A | 25V | N-Channel | 2645pF @ 10V | 3.2m Ω @ 10A, 10V | 2.6V @ 250μA | 50A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SIR866DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir866dpt1ge3-datasheets-0504.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 13 Weeks | 506.605978mg | Unknown | 1.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 42 ns | 23ns | 49 ns | 66 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.3V | 5.4W Ta 83W Tc | 39A | 20V | N-Channel | 4730pF @ 10V | 1.9m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 107nC @ 10V | 4.5V 10V | ±20V |
