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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Current | Circuit Type | Forward Current | Forward Voltage | Turn On Delay Time | On-State Current-Max | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Leakage Current (Max) | Threshold Voltage | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Repetitive Peak Reverse Voltage | Trigger Device Type | Voltage - Off State | Utilized IC / Part | Repetitive Peak Off-state Voltage | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Current - Hold (Ih) (Max) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | SCR Type | Voltage - On State (Vtm) (Max) | Current - Off State (Max) | RMS On-state Current-Max | Desc. of Quick-Connects | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFN34N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn34n100-datasheets-8717.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | Not Qualified | 65ns | 30 ns | 110 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 700W Tc | 136A | 0.28Ohm | 1kV | N-Channel | 9200pF @ 25V | 280m Ω @ 500mA, 10V | 5.5V @ 8mA | 34A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK260N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx260n17t-datasheets-9075.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1670W Tc | 700A | 0.0065Ohm | N-Channel | 24000pF @ 25V | 6.5m Ω @ 60A, 10V | 5V @ 8mA | 260A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKP10N60C5M | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp10n60c5m-datasheets-1008.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 31W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5.4A | 20V | SILICON | SWITCHING | TO-220AB | 0.385Ohm | 225 mJ | 600V | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 5.4A Tc | 22nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC12N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc12n80p-datasheets-4312.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 120W Tc | 7A | 1000 mJ | 800V | N-Channel | 2800pF @ 25V | 930m Ω @ 6A, 10V | 5.5V @ 2.5mA | 7A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK150N15 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx150n15-datasheets-8690.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 60ns | 45 ns | 110 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 600A | 0.0125Ohm | 150V | N-Channel | 9100pF @ 25V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN38N100Q2 | IXYS | $36.21 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn38n100q2-datasheets-4474.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 28ns | 15 ns | 57 ns | 38A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 890W Tc | 152A | 0.25Ohm | 5000 mJ | 1kV | N-Channel | 7200pF @ 25V | 250m Ω @ 19A, 10V | 5V @ 8mA | 38A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFY4N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | AVALANCHE RATED | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 114W Tc | TO-252AA | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD14N100-8X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | Die | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1000V | 1000V | 0.75Ohm | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR21N50Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX60N25Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM11N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n80-datasheets-2163.pdf | TO-204AA, TO-3 | 2 | yes | AVALANCHE RATED | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 300W Tc | 11A | 44A | 0.95Ohm | N-Channel | 4200pF @ 25V | 950m Ω @ 5.5A, 10V | 4.5V @ 4mA | 11A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM67N10 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth67n10-datasheets-1685.pdf | TO-204AE | 2 | 3 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 67A | 268A | 0.025Ohm | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LF-SIC-EVB-GDEV1 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | ROHS3 Compliant | 15 Weeks | Gate Driver | Silicon Carbide (SiC) Diodes, MOSFETs | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN414 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdn409-datasheets-5903.pdf | Yes | FET Driver (External FET) | IXDN414 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDMA210P1600YD | IXYS |
Min: 1 Mult: 1 |
download | 3 | 24 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | IEC-60747 | NO | UPPER | UNSPECIFIED | 150°C | -40°C | 2 | R-PUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 735W | 1600V | 1000μA | 1.34V | RECTIFIER DIODE | 6060A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX98N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfx98n50p3-datasheets-8690.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | EAR99 | AVALANCHE RATED | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 35 ns | 8ns | 6 ns | 65 ns | 98A | 30V | SILICON | DRAIN | SWITCHING | 1300W Tc | 245A | 0.05Ohm | 2000 mJ | 500V | N-Channel | 13100pF @ 25V | 50m Ω @ 500mA, 10V | 5V @ 8mA | 98A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF1N450 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtf1n450-datasheets-9289.pdf | i4-Pac™-5 (3 Leads) | 3 | 8 Weeks | 3 | EAR99 | unknown | Single | 165W | 1 | FET General Purpose Power | 60ns | 127 ns | 58 ns | 900mA | 20V | SILICON | ISOLATED | 4500V | 160W Tc | 0.9A | 3A | 80Ohm | 4.5kV | N-Channel | 1730pF @ 25V | 85 Ω @ 50mA, 10V | 6.5V @ 250μA | 900mA Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH24N80P | IXYS | $5.61 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n80p-datasheets-4174.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 400MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 650W | 1 | FET General Purpose Power | 32 ns | 27ns | 24 ns | 75 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | TO-247AD | 55A | 800V | N-Channel | 7200pF @ 25V | 400m Ω @ 12A, 10V | 5V @ 4mA | 24A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN106N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | 200V | 106A | SOT-227-4, miniBLOC | Lead Free | 8 Weeks | 20MOhm | 4 | No | 520W | 1 | SOT-227B | 9nF | 80ns | 30 ns | 75 ns | 106A | 20V | 200V | 521W Tc | 20mOhm | 200V | N-Channel | 9000pF @ 25V | 20mOhm @ 500mA, 10V | 4V @ 8mA | 106A Tc | 380nC @ 10V | 20 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA10N60P | IXYS | $3.41 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfp10n60p-datasheets-2120.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 25A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 1mA | 10A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMO1200-01F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-vmo120001f-datasheets-7431.pdf | Y3-Li | Lead Free | 4 | yes | EAR99 | not_compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 1.245kA | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 1220A | 0.00125Ohm | N-Channel | 1.35m Ω @ 932A, 10V | 4V @ 64mA | 1220A Tc | 2520nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGSK20-025AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | Common Cathode | 250V | 12A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEC29-02AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | Common Cathode | 25 ns | 200V | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKT70N60C5 | IXYS |
Min: 1 Mult: 1 |
Surface Mount | ENHANCEMENT MODE | RoHS Compliant | TO-268-3 | Lead Free | 2 | AVALANCHE RATED | SINGLE | GULL WING | -55°C | 1 | R-PSSO-G2 | 68A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-268AA | 66A | 0.045Ohm | 1950 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CS19-08HO1S-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TJ | 2015 | /files/ixys-cs1908ho1strl-datasheets-8164.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | CS19 | SCR | 800V | 31A | 50mA | 1.5V | 180A 195A | 28mA | 20A | Standard Recovery | 1.32V | 50μA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VHF55-12IO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/ixys-vko5508io7-datasheets-4359.pdf | 53A | FO-T-A | 6 | 25 Weeks | 6 | yes | 8541.30.00.80 | e4 | Gold (Au) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | VHF55 | NOT SPECIFIED | 2 | Silicon Controlled Rectifiers | Not Qualified | SCR | 41000A | BRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN DIODE | ISOLATED | 5mA | 200mA | 1200V | SCR | 1.2kV | 1200V | 200mA | 1.5V | 550A 600A | 100mA | 41A | 2G-2AK-CA-CK | Bridge, Single Phase - SCRs/Diodes (Layout 1) | 2 SCRs, 2 Diodes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI60-06A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -55°C | ROHS3 Compliant | 2000 | /files/ixys-dsei6006a-datasheets-6221.pdf&product=ixys-dsei6006a-5831809 | 600V | 60A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 20 Weeks | No SVHC | 2 | yes | EAR99 | FREEWHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | 3 | Single | 166W | 1 | Rectifier Diodes | R-PSFM-T3 | 60A | 60A | 1.8V | 600A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 550A | 200μA | 600V | 600A | 600V | 50 ns | 50 ns | Standard | 600V | 60A | 1 | 200μA @ 600V | 1.8V @ 70A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH50N90B2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixgh50n90b2-datasheets-0569.pdf | TO-247-3 | 3 | 30 Weeks | 6.500007g | 3 | yes | 400W | NOT SPECIFIED | IXG*50N90 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 400W | TO-247AD | 900V | 48 ns | 900V | 75A | 820 ns | 720V, 50A, 5 Ω, 15V | 2.7V @ 15V, 50A | PT | 135nC | 200A | 20ns/350ns | 4.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DCG160X650NA | IXYS |
Min: 1 Mult: 1 |
download | DCG 160X650NA | Chassis Mount | SOT-227-4, miniBLOC | 20 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 650V | 1.35V @ 50A | 80A | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ170C2K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz170c2k-datasheets-7511.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | NOT SPECIFIED | 2 | Not Qualified | 1.9V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1kA | 2kV | Standard | 2kV | 10A | 1000A | 1 | 2000V | 500μA @ 2000V | 1.9V @ 40A | 1 Pair Series Connection |
