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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | uPs/uCs/Peripheral ICs Type | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Standby Voltage-Min | Access Mode |
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| EDB4064B4PB-1DIT-F-R TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb4064b4pb1ditfr-datasheets-5534.pdf | 216-WFBGA | 9 Weeks | 1.14V~1.95V | 4Gb 64M x 64 | Volatile | 533MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512N10FFA010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100, GL-N | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 64-LBGA | 18 Weeks | 2.7V~3.6V | 512Mb 64M x 8 32M x 16 | Non-Volatile | FLASH | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV10248EDBLL-10CTLA3 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 10.16mm | 44 | 10 Weeks | 44 | 1 | YES | 2.4V~3.6V | DUAL | 3V | 0.8mm | 3.6V | 2.4V | 2.5/3.3V | 0.065mA | Not Qualified | AEC-Q100 | 8Mb 1M x 8 | Volatile | 3-STATE | SRAM | Parallel | 1MX8 | 8 | 10ns | 8388608 bit | 0.035A | 10 ns | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M16JY-075E AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a2g4we083ebtr-datasheets-5390.pdf | 96-TFBGA | 14mm | 8mm | 96 | 1 | AUTO/SELF REFRESH | compliant | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.14V~1.26V | BOTTOM | 260 | 1.2V | 0.8mm | 1.26V | 1.14V | 30 | R-PBGA-B96 | AEC-Q100 | 8Gb 512M x 16 | Volatile | 1.33GHz | DRAM | Parallel | 512MX16 | 16 | 8589934592 bit | MULTI BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MR20H40CDFR | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | SYNCHRONOUS | 0.9mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr25h40cdf-datasheets-7354.pdf | 8-VDFN Exposed Pad | 6mm | 5mm | 3.3V | 8 | 12 Weeks | 8 | SPI, Serial | 4 Mb | EAR99 | 1 | 3V~3.6V | DUAL | 260 | 3.3V | 1.27mm | 8 | 3.6V | 3V | 40 | 0.0465mA | Not Qualified | 4Mb 512K x 8 | Non-Volatile | 9 ns | 50MHz | RAM | SPI | 8 | 0.00075A | 8b | ||||||||||||||||||||||||||||||||||||||||||||||
| MT28HL04GABB1EPG-0GCT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | 4 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M16JY-083E AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a2g4we083ebtr-datasheets-5390.pdf | 96-TFBGA | 14mm | 8mm | 96 | 1 | AUTO/SELF REFRESH | compliant | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.14V~1.26V | BOTTOM | 260 | 1.2V | 0.8mm | 1.26V | 1.14V | 30 | R-PBGA-B96 | AEC-Q100 | 8Gb 512M x 16 | Volatile | 1.2GHz | DRAM | Parallel | 512MX16 | 16 | 8589934592 bit | MULTI BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61NVF51236B-6.5B3LI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | 165-TBGA | 12 Weeks | 165 | 2.375V~2.625V | 18Mb 512K x 36 | Volatile | 6.5ns | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC8GLGDQ-AIT Z | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | FLASH - NAND | RoHS Compliant | 2002 | 100-LBGA | 16 Weeks | compliant | 8542.31.00.01 | 1.65V~3.6V | NOT SPECIFIED | NOT SPECIFIED | 64Gb 8G x 8 | Non-Volatile | MICROPROCESSOR CIRCUIT | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61NVF51236B-6.5TQL-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | 100-LQFP | 12 Weeks | 100 | 2.375V~2.625V | 18Mb 512K x 36 | Volatile | 6.5ns | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V321L35PFGI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v321l25tfgi-datasheets-6634.pdf | 64-LQFP | 10 Weeks | 3V~3.6V | IDT71V321 | 64-TQFP (14x14) | 16Kb 2K x 8 | Volatile | 35ns | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-053 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | 200-WFBGA | 14.5mm | 10mm | 200 | 11 Weeks | 1 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 0.6V 1.1V | BOTTOM | BALL | 260 | 1.1V | 0.8mm | 1.17V | 1.06V | 30 | R-PBGA-B200 | AEC-Q100 | 8Gb 256M x 32 | Volatile | 1.866GHz | DRAM | 256MX32 | 32 | 8589934592 bit | SINGLE BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64LF12832A-7.5TQLA3 | ISSI, Integrated Silicon Solution Inc | $23.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 20mm | 3.3V | 100 | 12 Weeks | 100 | 4 Mb | yes | 4 | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | No | 1 | 175mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.465V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.135V | 40 | 4Mb 128K x 32 | Volatile | 3-STATE | 7.5ns | 117MHz | 17b | SRAM | Parallel | 128KX32 | 32 | 32b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||||||||||
| CY62167GE30-45BV1XI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1mm | ROHS3 Compliant | 2011 | 48-VFBGA | 8mm | 6mm | 48 | 12 Weeks | 48 | 3A991.B.2.A | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 2.2V~3.6V | BOTTOM | 260 | 3V | 0.75mm | CY62167 | 3.6V | 2.2V | 30 | 16Mb 2M x 8 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 45ns | 16777216 bit | 8 | 45 ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| CY62168GE30-45BVXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1mm | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62168g3045bvxit-datasheets-9884.pdf | 48-VFBGA | 8mm | 6mm | 48 | 12 Weeks | 48 | 3A991.B.2.A | 8542.32.00.41 | 1 | YES | 2.2V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 0.75mm | 3.6V | 2.2V | NOT SPECIFIED | 16Mb 2M x 8 | Volatile | SRAM | Parallel | 2MX8 | 8 | 45ns | 16777216 bit | 45 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 71421LA25PFGI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71321sa55jg-datasheets-8633.pdf | 64-LQFP | 12 Weeks | 4.5V~5.5V | IDT71421 | 64-TQFP | 16Kb 2K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC8GLWDQ-3M AIT Z | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | FLASH - NAND | RoHS Compliant | 100-LBGA | 16 Weeks | compliant | 2.7V~3.6V | NOT SPECIFIED | NOT SPECIFIED | 64Gb 8G x 8 | Non-Volatile | 2.7V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F256G08EBHBFB16C3WC1-FES | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | 8 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1360S-166BZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | 85°C | -40°C | SRAM - Synchronous, SDR | 166MHz | ROHS3 Compliant | 2016 | 165-LBGA | 6 Weeks | 165 | Parallel | 3.135V~3.6V | CY7C1360 | 165-FBGA (13x15) | 9Mb 256K x 36 | Volatile | 3.5ns | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46TR16256AL-15HBLA1 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 96-TFBGA | 13mm | 1.35V | 240mA | 96 | 10 Weeks | 96 | 4 Gb | 1 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 180mA | 1.283V~1.45V | BOTTOM | 1.35V | 0.8mm | 1.45V | 1.283V | Not Qualified | AEC-Q100 | 4Gb 256M x 16 | Volatile | 16b | 3-STATE | 20ns | 667MHz | 18b | DRAM | Parallel | 256MX16 | 16 | 15ns | 0.016A | COMMON | 8192 | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||
| CY62168G30-45BVXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1mm | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62168g3045bvxit-datasheets-9884.pdf | 48-VFBGA | 8mm | 6mm | 48 | 13 Weeks | 48 | 3A991.B.2.B | 8542.32.00.41 | 1 | YES | 2.2V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 0.75mm | 3.6V | 2.2V | NOT SPECIFIED | 16Mb 2M x 8 | Volatile | SRAM | Parallel | 2MX8 | 8 | 45ns | 16777216 bit | 45 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A1G8SA-062E AIT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 78-TFBGA | 1.14V~1.26V | 8Gb 1G x 8 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29RZ4C8DZZMHAN-18W.80D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -25°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND, DRAM - LPDDR2 | ROHS3 Compliant | 1.8V | 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 | Non-Volatile | 533MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29GZ5A3BPGGA-53AAT.87K | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 8 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV10248BLL-10CTLA3-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 3 (168 Hours) | 125°C | -40°C | SRAM - Asynchronous | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10 Weeks | 3.6V | 2.4V | 44 | Parallel | 8 Mb | 2 | No | 2.4V~3.6V | 44-TSOP II | 8Mb 1M x 8 | Volatile | 10ns | 20b | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46TR16256A-125KBLA1 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 96-TFBGA | 13mm | 1.5V | 290mA | 96 | 10 Weeks | 96 | 4 Gb | 1 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 230mA | 1.425V~1.575V | BOTTOM | 1.5V | 0.8mm | 1.575V | 1.425V | Not Qualified | AEC-Q100 | 4Gb 256M x 16 | Volatile | 16b | 3-STATE | 20ns | 800MHz | 18b | DRAM | Parallel | 256MX16 | 16 | 15ns | 0.018A | COMMON | 8192 | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-046 AIT:B | Micron Technology Inc. | $17.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 12 Weeks | 0.6V 1.1V | 8Gb 256M x 32 | Volatile | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1354CV25-200AXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NoBL™ | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1354cv25166axc-datasheets-9396.pdf | 100-LQFP | 20mm | 1.4mm | 14mm | 2.5V | Lead Free | 220mA | 100 | 6 Weeks | 657.000198mg | 100 | 9 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 220mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.375V~2.625V | QUAD | 260 | 2.5V | 0.65mm | CY7C1354 | 100 | 2.625V | 2.375V | 20 | 9Mb 256K x 36 | Volatile | 3.2ns | 200MHz | 18b | SRAM | Parallel | 256KX36 | 36b | Synchronous | |||||||||||||||||||||||||||||||||||||
| IS43TR85120A-15HBLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 78-TFBGA | 10.5mm | 1.5V | 78 | 78 | 4 Gb | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | 1 | YES | 1.425V~1.575V | BOTTOM | 1.5V | 0.8mm | 78 | 1.575V | 1.425V | 4Gb 512M x 8 | Volatile | 20ns | 667MHz | 16b | DRAM | Parallel | 512MX8 | 8 | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61VPS51236B-250B3LI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.2mm | ROHS3 Compliant | 165-TBGA | 15mm | 13mm | 165 | 12 Weeks | 165 | yes | 1 | YES | 2.375V~2.625V | BOTTOM | NOT SPECIFIED | 2.5V | 1mm | 2.625V | 2.375V | NOT SPECIFIED | 18Mb 512K x 36 | Volatile | 2.6ns | 250MHz | SRAM | Parallel | 512KX36 | 36 | 18874368 bit |
