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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Standby Voltage-Min | Access Mode |
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| EDB8164B4PT-1DIT-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb8164b4pt1datfd-datasheets-8979.pdf | 216-WFBGA | 12mm | 12mm | 216 | 8 Weeks | 1 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.14V~1.95V | BOTTOM | 1.2V | 0.4mm | 1.95V | 1.14V | S-PBGA-B216 | 8Gb 128M x 64 | Volatile | 533MHz | DRAM | Parallel | 128MX64 | 64 | 8589934592 bit | SINGLE BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA20TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS45S16320D-7CTLA1-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | SDRAM | 143MHz | ROHS3 Compliant | 54-TSOP (0.400, 10.16mm Width) | 8 Weeks | 3.6V | 3V | 54 | Parallel | 143MHz | 3V~3.6V | 54-TSOP II | 512Mb 32M x 16 | Volatile | 16b | 5.4ns | 143MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC4GMWDQ-3M AIT A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Bulk | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-LBGA | 7 Weeks | 2.7V~3.6V | 32Gb 4G x 8 | Non-Volatile | 2.7V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4C64M16D1A-6TCNTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c64m16d1a6tin-datasheets-4260.pdf | 66-TSSOP (0.400, 10.16mm Width) | 8 Weeks | unknown | 2.3V~2.7V | NOT SPECIFIED | NOT SPECIFIED | 1Gb 64M x 16 | Volatile | 700ps | 166MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA35DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7130LA20TFG | Renesas Electronics America Inc. | $20.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7130la25pfgi-datasheets-7328.pdf | 64-LQFP | 14 Weeks | 4.5V~5.5V | IDT7130 | 8Kb 1K x 8 | Volatile | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LF51218A-7.5TQLI | ISSI, Integrated Silicon Solution Inc | $26.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 3.3V | 100 | 12 Weeks | 100 | 9 Mb | yes | 2 | FLOW-THROUGH ARCHITECTURE | No | 1 | 185mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.6V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.465V | 3.135V | 40 | 9Mb 512K x 18 | Volatile | 3-STATE | 7.5ns | 117MHz | 19b | SRAM | Parallel | 18 | 0.085A | 18b | Synchronous | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||
| IS61LF25636A-7.5TQLI | ISSI, Integrated Silicon Solution Inc | $13.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/issi-is61lf25636a75tqli-datasheets-9137.pdf | 100-LQFP | 20mm | 3.3V | 185mA | 100 | 12 Weeks | 657.000198mg | 100 | 9 Mb | yes | 4 | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | No | 1 | 185mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.6V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.135V | 40 | 9Mb 256K x 36 | Volatile | 3-STATE | 7.5ns | 117MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 0.085A | 36b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||||
| IS61LPS25636A-200B3LI | ISSI, Integrated Silicon Solution Inc | $23.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.2mm | ROHS3 Compliant | 165-TBGA | 15mm | 3.3V | 165 | 12 Weeks | 165 | 9 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 275mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 3.135V~3.465V | BOTTOM | 260 | 3.3V | 1mm | 165 | 3.135V | 40 | 9Mb 256K x 36 | Volatile | 3-STATE | 3.1ns | 200MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 0.105A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||||
| IS61NLP51218A-200TQLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 3.3V | 100 | 12 Weeks | 100 | 9 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 280mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.465V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.465V | 3.135V | 40 | 9Mb 512K x 18 | Volatile | 3-STATE | 3.1ns | 200MHz | 19b | SRAM | Parallel | 18 | 0.05A | 18b | Synchronous | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||
| SM662GX8-ACS | Silicon Motion, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V321L25TFG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v321l25tfgi-datasheets-6634.pdf | 64-LQFP | 12 Weeks | 3V~3.6V | IDT71V321 | 64-TQFP (10x10) | 16Kb 2K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46TR16256A-125KBLA2-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR3 | ROHS3 Compliant | 96-TFBGA | 1.5V | 290mA | 10 Weeks | 96 | 4 Gb | 230mA | 1.425V~1.575V | 4Gb 256M x 16 | Volatile | 16b | 20ns | 800MHz | 18b | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B101LA-BA45XIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14b101lasp45xi-datasheets-7591.pdf | 48-TFBGA | 10mm | 3V | 48 | 13 Weeks | 48 | 1 Mb | EAR99 | 8542.32.00.41 | 1 | 52mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 260 | 3V | 0.75mm | CY14B101 | 48 | 3.6V | 2.7V | 30 | SRAMs | Not Qualified | 1Mb 128K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 128KX8 | 8 | 45ns | 0.005A | 8b | 45 ns | |||||||||||||||||||||||||||||||||||||||
| MT47H128M16RT-25E AAT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Tray | 3 (168 Hours) | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt47h128m16rt25eitc-datasheets-7288.pdf | 84-TFBGA | 12.5mm | 9mm | 84 | 4 Weeks | yes | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | 1 | e1 | TIN SILVER COPPER | YES | 1.7V~1.9V | BOTTOM | 260 | 1.8V | 0.8mm | MT47H128M16 | 84 | 1.9V | 1.7V | 30 | 1.8V | 0.33mA | Not Qualified | R-PBGA-B84 | AEC-Q100 | 2Gb 128M x 16 | Volatile | 3-STATE | 400ps | 400MHz | DRAM | Parallel | 128MX16 | 16 | 15ns | 2147483648 bit | 0.012A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||
| MTFC4GMWDQ-AIT A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Bulk | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-LBGA | 7 Weeks | 2.7V~3.6V | 32Gb 4G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA45TDB | Renesas Electronics America Inc. | $23.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 24-CDIP | 16Kb 2K x 8 | Volatile | 45ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71321SA35TFG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71321sa55jg-datasheets-8633.pdf | 64-LQFP | 10 Weeks | 4.5V~5.5V | IDT71321 | 64-TQFP | 16Kb 2K x 8 | Volatile | 35ns | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V321L35JGI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v321l25tfgi-datasheets-6634.pdf | 52-LCC (J-Lead) | 13 Weeks | 3V~3.6V | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA90DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46LR32160B-6BLA2 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR | 1.2mm | ROHS3 Compliant | 90-TFBGA | 13mm | 1.8V | 90 | 14 Weeks | 90 | 512 Mb | yes | 1 | EAR99 | AUTO/SELF REFRESH | No | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | YES | 1.7V~1.95V | BOTTOM | 260 | 1.8V | 0.8mm | 90 | 1.95V | 1.7V | 40 | 0.13mA | 512Mb 16M x 32 | Volatile | 32b | 3-STATE | 5.5ns | 166MHz | 15b | DRAM | Parallel | 16MX32 | 32 | 12ns | 0.00001A | COMMON | 8192 | 24816 | 24816 | |||||||||||||||||||||||||||||||||||
| IS45S16320F-7CTLA2-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 54-TSOP (0.400, 10.16mm Width) | 22.22mm | 10.16mm | 54 | 8 Weeks | 54 | yes | 1 | AUTO/SELF REFRESH | 1 | YES | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 3.6V | 3V | NOT SPECIFIED | 512Mb 32M x 16 | Volatile | 5.4ns | 143MHz | DRAM | Parallel | 32MX16 | 16 | 536870912 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 71342LA20JG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71342sa55pf-datasheets-2477.pdf | 52-LCC (J-Lead) | 13 Weeks | 4.5V~5.5V | IDT71342 | 52-PLCC (19.13x19.13) | 32Kb 4K x 8 | Volatile | 20ns | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA55DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA55DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA70DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1356C-166AXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NoBL™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1354c166axi-datasheets-6949.pdf | 100-LQFP | 3.3V | Lead Free | 100 | 7 Weeks | 100 | 9 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 180mA | e3 | Matte Tin (Sn) | 3.135V~3.6V | QUAD | 260 | 3.3V | 0.65mm | CY7C1356 | 100 | 3.6V | 3.135V | 20 | 9Mb 512K x 18 | Volatile | 3-STATE | 3.5ns | 166MHz | 19b | SRAM | Parallel | 18 | 0.04A | 18b | Synchronous | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||
| 6116SA90TDB | Renesas Electronics America Inc. | $124.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 90ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LPD25636A-200TQLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 20mm | 3.3V | 100 | 12 Weeks | 100 | 9 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 275mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.465V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.135V | 40 | 9Mb 256K x 36 | Volatile | 3-STATE | 3.1ns | 200MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 0.06A | 36b | Synchronous | COMMON |
