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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 6A100G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SS36-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 60V | 3A | 100A | 1 | 3A | 60V | 500μA @ 60V | 750mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| MUR340SB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur340sbr5g-datasheets-1487.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 45pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.25V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A40G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| FESF16BTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 250A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 250A | 100V | 35 ns | 35 ns | Standard | 100V | 16A | 1 | 10μA @ 100V | 975mV @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||
| RB068L-60TE25 | ROHM Semiconductor | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2012 | Lead Free | 2 | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | SILICON | 2μA | DO-214AC | 0.68V | RECTIFIER DIODE | 60V | 2A | 90A | 1 | 2A | |||||||||||||||||||||||||||||||||||||||||
| FESF16GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 250A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 250A | 400V | 50 ns | 50 ns | Standard | 400V | 16A | 1 | 10μA @ 400V | 1.3V @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||
| SB580E-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-sb580eg-datasheets-5041.pdf | DO-201AD, Axial | 12 Weeks | yes | SB580 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 80V | 5A | 500pF @ 4V 1MHz | 80V | 500μA @ 80V | 850mV @ 5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG22BHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg22de3tr-datasheets-0872.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Avalanche | 100V | 1μA @ 100V | 1.1V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT51J-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byt51gtap-datasheets-4743.pdf | 1.5A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.5A | 1.1V | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 50A | 600V | 4 μs | 4 μs | Avalanche | 600V | 1.5A | 1A | 1μA @ 600V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||
| BY458TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 140°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by448tr-datasheets-0720.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1.6V | 30A | ISOLATED | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3μA | 1.2kV | 30A | 1.2kV | 2 μs | 20 μs | Avalanche | 1.2kV | 2A | 1 | 2A | 1200V | 3μA @ 1200V | 1.6V @ 3A | 140°C Max | ||||||||||||||||||||||||
| ES3F R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 30pF @ 4V 1MHz | 300V | 10μA @ 300V | 1.3V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A10G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A10G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.1V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A80G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 800V | 10μA @ 800V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| ES3GHR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 30pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3AHM6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 30pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.15V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6A05G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 10 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 50V | 10μA @ 50V | 1.1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE40PWGC-M3/I | Vishay Semiconductor Diodes Division | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se40pwjcm3i-datasheets-4976.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | SlimDPAK | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 14pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.1V @ 2A | 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS36 V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYX85TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byx86tap-datasheets-4874.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 50A | 800V | 4 μs | 4 μs | Avalanche | 800V | 2A | 1 | 2A | 20pF @ 4V 1MHz | 1μA @ 800V | 1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||
| MUR360SB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur340sbr5g-datasheets-1487.pdf | DO-214AA, SMB | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 40pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.25V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS23HE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss23e352t-datasheets-1000.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 125°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | Schottky | 30V | 2A | 75A | 1 | 2A | 30V | 400μA @ 30V | 500mV @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| 6A05G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | 10 Weeks | R-6 | Standard Recovery >500ns, > 200mA (Io) | Standard | 60pF @ 4V 1MHz | 50V | 10μA @ 50V | 1.1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYW34-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw36tr-datasheets-0780.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1.1V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 200 ns | 200 ns | Avalanche | 400V | 2A | 1 | 2A | 5μA @ 400V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||
| 6A60G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SK59B M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk510br5g-datasheets-0101.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 100μA @ 90V | 850mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMPD2004 BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpd2004atrpbfree-datasheets-2953.pdf | TO-236-3, SC-59, SOT-23-3 | 18 Weeks | compliant | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Small Signal =< 200mA (Io), Any Speed | 300V | 50ns | Standard | 4A | 0.225A | 5pF @ 0V 1MHz | 240V | 100nA @ 240V | 1V @ 100mA | 200mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| BYG22AHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg22de3tr-datasheets-0872.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Avalanche | 50V | 1μA @ 50V | 1.1V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYX85TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byx86tap-datasheets-4874.pdf | 2A | SOD-57, Axial | 20pF | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 50A | 800V | 4 μs | 4 μs | Avalanche | 800V | 2A | 1 | 2A | 20pF @ 4V 1MHz | 1μA @ 800V | 1V @ 1A | -55°C~175°C |
