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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| BYX86TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byx86tap-datasheets-4874.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 50A | 1kV | 4 μs | 4 μs | Avalanche | 1kV | 2A | 1 | 2A | 20pF @ 4V 1MHz | 1000V | 1μA @ 1000V | 1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||
| BYT51M-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt51gtap-datasheets-4743.pdf | 1.5A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | No | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.5A | 1.1V | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 50A | 1kV | 4 μs | 4 μs | Avalanche | 1kV | 1.5A | 1A | 1000V | 1μA @ 1000V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||
| SS32 V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 500μA @ 20V | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF37G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 5μA | 35ns | Standard | 125A | 1 | 3A | 60pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.7V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| 6A40G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| ES2FHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es2fe35bt-datasheets-3226.pdf | DO-214AA, SMB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 35 ns | Standard | 300V | 2A | 50A | 1 | 2A | 15pF @ 4V 1MHz | 300V | 10μA @ 50V | 1.1V @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| 6A80G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-6a10ga0g-datasheets-4991.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | 10μA | Standard | 250A | 1 | 6A | 60pF @ 4V 1MHz | 800V | 10μA @ 800V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SBRA8160T3G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-sbra8160t3gvf01-datasheets-5222.pdf | DO-214AC, SMA | 4 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 200μA @ 60V | 720mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV14-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-byv16tap-datasheets-0526.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.5A | 40A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 40A | 600V | 300 ns | 300 ns | Avalanche | 600V | 1.5A | 1 | 5μA @ 600V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||
| UG58G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | 2 | 14 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | AEC-Q101 | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 30μA | 20ns | Standard | 65A | 1 | 5A | 600V | 30μA @ 600V | 2.1V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| RBR3L40ATE25 | ROHM Semiconductor | $2.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | DO-214AC, SMA | 2 | yes | HIGH RELIABILITY | DUAL | C BEND | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-C2 | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | 50μA | Schottky | 40V | 3A | 30A | 1 | 3A | 50μA @ 40V | 690mV @ 3A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||
| SS3P3L-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-ss3p4lm386a-datasheets-5912.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS3P3 | 3 | Common Anode | 1 | Rectifier Diodes | 3A | 150A | 250μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 30V | 150A | TO-277A | Schottky | 30V | 3A | 1 | 3A | 250μA @ 30V | 470mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||
| SS34 V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS25HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss23e352t-datasheets-1000.pdf | DO-214AA, SMB | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | Single | NOT SPECIFIED | 1 | 2A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | 50V | 75A | Schottky | 50V | 2A | 1 | 2A | 400μA @ 50V | 700mV @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| BYM13-30-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM13-30 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 30A | Schottky | 30V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 30V | 500mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||||||
| SS34HR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 40V | 500μA @ 40V | 500mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AK 09V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ak09v0-datasheets-5074.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 0.7A | 0.1μs | 90V | 1mA @ 90V | 810mV @ 700mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| BYT54G-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | 1.25A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.25A | 1.5V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 100 ns | 100 ns | Avalanche | 400V | 1.25A | 0.75A | 5μA @ 400V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||
| AG01AV0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ag01av1-datasheets-0601.pdf | Axial | 12 Weeks | EAR99 | 22 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | Standard | 600V | 500mA | 600V | 100μA @ 600V | 1.8V @ 600mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR3U60P5Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr3u60p5q13d-datasheets-4808.pdf | PowerDI™ 5 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 60μA | Super Barrier | 60V | 3A | 80A | 1 | 3A | 60V | 100μA @ 60V | 620mV @ 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| ES3G R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | 17 Weeks | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 10μA | 35ns | Standard | 100A | 1 | 3A | 30pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| BYM13-20-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM13-20 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 20V | 30A | Schottky | 20V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 20V | 500mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||||||
| SBR10E45P5-13D | Diodes Incorporated | $0.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr10e45p513-datasheets-0786.pdf | PowerDI™ 5 | 3 | 15 Weeks | yes | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 280μA | Super Barrier | 45V | 10A | 275A | 1 | 45V | 280μA @ 45V | 470mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| AL01ZV0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-al01zv1-datasheets-9021.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | Standard | 200V | 1A | 200V | 50μA @ 200V | 980mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYM13-20HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 8 Weeks | 2 | yes | No | BYM13-20 | 2 | Single | 1A | 30A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 20V | 30A | Schottky | 20V | 1A | 110pF @ 4V 1MHz | 500μA @ 20V | 500mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||
| ES2AHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es2be352t-datasheets-6983.pdf | DO-214AA, SMB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 20 ns | Standard | 50V | 2A | 50A | 1 | 2A | 18pF @ 4V 1MHz | 50V | 10μA @ 50V | 900mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| ES3D-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 30 ns | Standard | 200V | 3A | 100A | 1 | 3A | 45pF @ 4V 1MHz | 200V | 10μA @ 200V | 900mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| SS29-E3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-ss210e352t-datasheets-4809.pdf | DO-214AA, SMB | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | SS29 | 2 | Single | 40 | 1 | Rectifier Diodes | R-PDSO-C2 | 1.5A | 75A | 30μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 90V | 75A | Schottky | 90V | 1.5A | 1 | 30μA @ 90V | 750mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||
| SS29HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss210e352t-datasheets-4809.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | AEC-Q101 | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | 30μA | Schottky | 75A | 1 | 1.5A | 90V | 30μA @ 90V | 950mV @ 3A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| AK 06V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ak06v1-datasheets-5137.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 1mA @ 60V | 620mV @ 700mA | 700mA | -40°C~150°C |
