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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Number of Terminations | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BYD33JGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd33kgphe354-datasheets-0997.pdf | DO-204AL, DO-41, Axial | No | BYD33J | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 600V | 30A | 600V | 250ns | 250 ns | Standard | 600V | 1A | 15pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||
| GP30MHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30M | 2 | Single | 1 | Rectifier Diodes | 1.1V | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 125A | 1kV | 5 μs | 5 μs | Standard | 1kV | 3A | 1 | 3A | 1000V | 5μA @ 1000V | 1.1V @ 3A | -65°C~175°C | ||||||||||||||
| FGP20DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20D | 2 | Single | 1 | Rectifier Diodes | 2A | 950mV | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 50A | 200V | 35 ns | 35 ns | Standard | 200V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 200V | 950mV @ 2A | -65°C~175°C | |||||||||||||
| GP15DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 3.5 μs | 3.5 μs | Standard | 200V | 1.5A | 1 | 5μA @ 200V | 1.1V @ 1.5A | -65°C~175°C | |||||||||||||||||
| GP10THE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10T | 2 | Single | 1 | Rectifier Diodes | 1A | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.3kV | 25A | 1.3kV | 3 μs | 3 μs | Standard | 1.3kV | 1A | 1A | 5pF @ 4V 1MHz | 1300V | 5μA @ 1300V | 1.3V @ 1A | -65°C~150°C | |||||||||||||||
| GP30KHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30K | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 800V | 125A | 800V | 5 μs | 5 μs | Standard | 800V | 3A | 1 | 3A | 5μA @ 800V | 1.1V @ 3A | -65°C~175°C | ||||||||||||||||
| EGP20FHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20F | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 75A | 300V | 50 ns | 50 ns | Standard | 300V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 2A | -65°C~150°C | |||||||||||||||
| GP10QHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10Q | 2 | Single | 1 | Rectifier Diodes | 1A | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.2kV | 25A | 1.2kV | 3 μs | 3 μs | Standard | 1.2kV | 1A | 1A | 7pF @ 4V 1MHz | 1200V | 5μA @ 1200V | 1.2V @ 1A | -65°C~150°C | |||||||||||||||
| GP02-30HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp0240e354-datasheets-3946.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | GP02-30 | 2 | Single | 1 | Rectifier Diodes | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 3kV | 15A | 3kV | 2 μs | 2 μs | Standard | 3kV | 250mA | 3000V | 5μA @ 3000V | 3V @ 1A | -65°C~175°C | ||||||||||||||||||
| GP10JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10J | 2 | Single | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 30A | 600V | 3 μs | 3 μs | Standard | 600V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 600V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||
| GP10-4003EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | GP10-4003 | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 1A | 200V | 1A | |||||||||||||||||||||||||||||||||||||||||||||
| GP10-4007EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | GP10-4007 | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 1kV | 1A | 1000V | 1A | |||||||||||||||||||||||||||||||||||||||||||||
| BYD13KGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd13jgphe354-datasheets-0967.pdf | DO-204AL, DO-41, Axial | No | BYD13K | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 800V | 30A | 800V | 3μs | 3 μs | Standard | 800V | 1A | 8pF @ 4V 1MHz | 800V | 5μA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||
| GP10GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10G | 2 | Single | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 3 μs | 3 μs | Standard | 400V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||
| BYD33KGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd33kgphe354-datasheets-0997.pdf | DO-204AL, DO-41, Axial | No | BYD33K | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 800V | 30A | 800V | 300 ns | 300 ns | Standard | 800V | 1A | 15pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||
| NSB8ATHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | NSB8A | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 125A | Standard | 50V | 8A | 1 | 8A | 55pF @ 4V 1MHz | 10μA @ 50V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||
| GP10-4005EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | GP10-4005 | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 1A | 600V | 1A | |||||||||||||||||||||||||||||||||||||||||||||
| MBRF1050-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 10A | 1 | 100μA @ 50V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||
| GI1-1600GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi11600gpe354-datasheets-8126.pdf | 3.6mm | DO-204AC, DO-15, Axial | 7.6mm | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | GI1-1600 | 2 | Single | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.6kV | 30A | 1.6kV | 1.5 μs | 25 μs | Standard | 1.6kV | 1A | 1A | 1600V | 10μA @ 1600V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||
| FGP10D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 30A | 200V | 35 ns | 35 ns | Standard | 200V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 200V | 950mV @ 1A | -65°C~175°C | |||||||||||||||||
| GP10VHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10V | 2 | Single | 1 | Rectifier Diodes | 1A | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.4kV | 25A | 1.4kV | 3 μs | 3 μs | Standard | 1.4kV | 1A | 1A | 5pF @ 4V 1MHz | 1400V | 5μA @ 1400V | 1.3V @ 1A | -65°C~150°C | |||||||||||||||
| FGP10B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 100V | 30A | 100V | 35 ns | 35 ns | Standard | 100V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 100V | 950mV @ 1A | -65°C~175°C | |||||||||||||||||
| FGP10CHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 30A | 150V | 35 ns | 35 ns | Standard | 150V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 150V | 950mV @ 1A | -65°C~175°C | |||||||||||||||||
| FGP20C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 50A | 150V | 35 ns | 35 ns | Standard | 150V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 150V | 950mV @ 2A | -65°C~175°C | ||||||||||||||
| EGP30C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 20 | yes | EAR99 | No | 8541.10.00.80 | EGP30C | 2 | Single | 950mV | 125A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 150V | 125A | 150V | 50 ns | 50 ns | Standard | 150V | 3A | 5μA @ 150V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||||||||||||
| EGP30CHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 150V | 50 ns | 50 ns | Standard | 150V | 3A | 1 | 3A | 5μA @ 150V | 950mV @ 3A | -65°C~150°C | |||||||||||||||
| EGP30D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 20 | yes | EAR99 | No | 8541.10.00.80 | EGP30D | 2 | Single | 950mV | 125A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 200V | 125A | 200V | 50 ns | 50 ns | Standard | 200V | 3A | 5μA @ 200V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||||||||||||
| GP02-20HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp0240e354-datasheets-3946.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | GP02-20 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2kV | 15A | 2kV | 2 μs | 2 μs | Standard | 2kV | 250mA | 0.25A | 2000V | 5μA @ 2000V | 3V @ 1A | -65°C~175°C | |||||||||||||||||
| BYW27-400GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw27200gpe354-datasheets-4622.pdf | DO-204AL, DO-41, Axial | 2 | BYW27-400 | Single | DO-204AL (DO-41) | 1A | Standard Recovery >500ns, > 200mA (Io) | 200nA | 400V | 30A | 3 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 200nA @ 400V | 1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| EGP50CHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 150A | 150V | 50 ns | 50 ns | Standard | 150V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 5A | -65°C~150°C |
