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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GP20GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp20ge373-datasheets-5168.pdf | DO-201AA, DO-27, Axial | 20 | GP20G | Single | GP20 | 65A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 5 μs | 5 μs | Standard | 400V | 2A | 400V | 5μA @ 400V | 1.1V @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| SB150A-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb150ae373-datasheets-5253.pdf | DO-204AL, DO-41, Axial | 2 | SB150 | Single | DO-204AL (DO-41) | 700mV | 35A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 35A | Schottky | 50V | 1A | 50V | 500μA @ 50V | 650mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| 1N4003GPEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | Tin | 1N4003 | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 200V | 30A | 200V | 2 μs | 2 μs | Standard | 200V | 1A | 8pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| GPP60AHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GPP60A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 500A | 50V | 5.5 μs | 5.5 μs | Standard | 50V | 6A | 1 | 6A | 5μA @ 50V | 1.1V @ 6A | -55°C~175°C | ||||||||||||||||||||
| 1N4004GPEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | No | 1N4004 | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 2 μs | 2 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| SB360A-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb360ae373-datasheets-5260.pdf | DO-201AD, Axial | 2 | SB360 | Single | DO-201AD | 700mV | 80A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 80A | Schottky | 60V | 3A | 60V | 500μA @ 60V | 700mV @ 3A | 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| GPP60D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | GPP60D | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 500A | 200V | 5.5 μs | 5.5 μs | Standard | 200V | 6A | 1 | 6A | 5μA @ 200V | 1.1V @ 6A | -55°C~175°C | |||||||||||||||||
| 1N4934GPEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4934gpe354-datasheets-9941.pdf | DO-204AL, DO-41, Axial | 2 | Tin | 1N4934 | Single | DO-204AL (DO-41) | 30A | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 30A | 200 ns | 200 ns | Standard | 100V | 1A | 15pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.2V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| 1N4383GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4385gpe354-datasheets-2697.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4383 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 2 μs | 2 μs | Standard | 200V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 200V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||
| RGP10KHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP10K | 2 | Single | 1 | Rectifier Diodes | 30A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 30A | 500 ns | 500 ns | Standard | 800V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 800V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||
| EGP20BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20B | 2 | Single | 1 | Rectifier Diodes | 950mV | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 75A | 100V | 50 ns | 50 ns | Standard | 100V | 2A | 1 | 2A | 70pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 2A | -65°C~150°C | ||||||||||||||||||
| SBYV26CHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbyv26ce354-datasheets-6305.pdf | 2.7mm | DO-204AL, DO-41, Axial | 5.2mm | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SBYV26 | 2 | Single | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 30A | 600V | 30 ns | 30 ns | Standard | 600V | 1A | 1A | 5μA @ 600V | 2.5V @ 1A | -65°C~175°C | |||||||||||||||||||||
| 1N4004GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | WIRE | 1N4004 | 2 | Single | 1 | Rectifier Diodes | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 2 μs | 2 μs | Standard | 400V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||
| TVR10GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | TVR10 | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | Standard | 400V | 1A | 400V | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| RGP20DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp20be373-datasheets-5121.pdf | DO-201AA, DO-27, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT APPLICABLE | RGP20D | 2 | Single | NOT APPLICABLE | 1 | Not Qualified | O-PALF-W2 | 80A | 5μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150 ns | 150 ns | Standard | 200V | 2A | 1 | 2A | 5μA @ 200V | 1.3V @ 2A | -65°C~175°C | |||||||||||||||||||||||
| GP10KHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10K | 2 | Single | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 800V | 30A | 800V | 3 μs | 3 μs | Standard | 800V | 1A | 1A | 7pF @ 4V 1MHz | 5μA @ 800V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||
| MPG06DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mpg06ge354-datasheets-8621.pdf | MPG06, Axial | 2 | No | MPG06 | Single | MPG06 | 1A | 40A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 200V | 40A | 200V | 600 ns | 600 ns | Standard | 200V | 1A | 10pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| RGP30BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp30me354-datasheets-9202.pdf | DO-201AD, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP30B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | 5μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 150 ns | 150 ns | Standard | 100V | 3A | 1 | 3A | 5μA @ 100V | 1.3V @ 3A | -65°C~175°C | ||||||||||||||||||||
| RGP15DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp15be354-datasheets-2575.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP15D | 2 | Single | 1 | Rectifier Diodes | 50A | 5μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 150 ns | 150 ns | Standard | 200V | 1.5A | 1 | 5μA @ 200V | 1.3V @ 1.5A | -65°C~175°C | |||||||||||||||||||||
| RGP10DEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | No | RGP10D | Single | DO-204AL (DO-41) | 30A | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 200V | 30A | 150 ns | 150 ns | Standard | 200V | 1A | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| RGP10GEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | No | RGP10G | Single | DO-204AL (DO-41) | 30A | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 30A | 150 ns | 150 ns | Standard | 400V | 1A | 15pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| SRP300G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp300j1-datasheets-3705.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SRP300G | 2 | Single | 1 | Rectifier Diodes | 150A | 10μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 150A | 150 ns | 150 ns | Standard | 400V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 10μA @ 400V | 1.3V @ 3A | -50°C~125°C | ||||||||||||||||||||
| MUR160-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mur16054-datasheets-7215.pdf | DO-204AC, DO-15, Axial | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | MUR160 | 2 | Single | 1 | Rectifier Diodes | 1.25V | 35A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 35A | 600V | 75 ns | 75 ns | Standard | 600V | 1A | 1A | 5μA @ 600V | 1.25V @ 1A | -65°C~175°C | |||||||||||||||||||||
| GP15JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15J | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 3.5 μs | 3.5 μs | Standard | 600V | 1.5A | 1 | 5μA @ 600V | 1.1V @ 1.5A | -65°C~175°C | |||||||||||||||||||||
| MPG06JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mpg06ge354-datasheets-8621.pdf | MPG06, Axial | 2 | No | MPG06 | Single | MPG06 | 1A | 40A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 800V | 40A | 800V | 600 ns | 600 ns | Standard | 600V | 1A | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| GP10AHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 3 μs | 3 μs | Standard | 50V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 50V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||
| RMPG06JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rmpg06jhe3a54-datasheets-1547.pdf | MPG06, Axial | 2 | No | RMPG06J | Single | MPG06 | 1A | 40A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 600V | 40A | 600V | 200 ns | 200 ns | Standard | 600V | 1A | 6.6pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| RGP10JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP10J | 2 | Single | 1 | Rectifier Diodes | 30A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 30A | 250 ns | 250 ns | Standard | 600V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 600V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||
| MPG06GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mpg06ge354-datasheets-8621.pdf | MPG06, Axial | 2 | No | MPG06 | Single | MPG06 | 1A | 40A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 40A | 400V | 600ns | 600 ns | Standard | 400V | 1A | 10pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| SRP600K-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp600ke373-datasheets-5216.pdf | P600, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SRP600K | 2 | Single | 1 | Rectifier Diodes | 300A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 300A | 200 ns | 200 ns | Standard | 800V | 6A | 1 | 6A | 10μA @ 800V | 1.3V @ 6A | -50°C~125°C |
