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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| STBR6012W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stbr6012w-datasheets-4662.pdf | DO-247-2 (Straight Leads) | 2 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | STBR60 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 60A | SINGLE | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | 5μA | Standard | 1 | 1200V | 5μA @ 1200V | 1.3V @ 60A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3883R | GeneSiC Semiconductor | $6.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3883r-datasheets-0293.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 1N3883R | 150°C | 1 | Rectifier Diodes | 6A | 90A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 400V | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 6A | 6A | 15μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS215KGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/rohm-scs215kghrc-datasheets-0294.pdf | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 15A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 180W | 1200V | 300μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 790pF @ 1V 1MHz | 1200V | 300μA @ 1200V | 1.6V @ 15A | 15A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| VS-80EBU04HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs80ebu04hf4-datasheets-4683.pdf | PowerTab® | 1 | 14 Weeks | 2 | EAR99 | No | 8541.10.00.80 | UNSPECIFIED | Single | 1 | R-PSFM-X1 | 80A | 1.3V | 800A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 400V | 800A | 87 ns | 50 ns | Standard | 400V | 80A | 1 | 400V | 50μA @ 400V | 1.3V @ 80A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-8EVH06-M3/I | Vishay Semiconductor Diodes Division | $0.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8evh06m3i-datasheets-3929.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | SlimDPAK | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 600V | 20μA @ 600V | 2.4V @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5554US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 5A | 1.3V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 100A | 2 μs | Standard | 1kV | 3A | 1 | 5A | 1000V | 1μA @ 1000V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| SCS208AGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/rohm-scs208aghrc-datasheets-0271.pdf | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 8A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 68W | 650V | 160μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 8A | 291pF @ 1V 1MHz | 650V | 160μA @ 600V | 1.55V @ 8A | 8A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||
| MUR420 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur460a0g-datasheets-1971.pdf | DO-201AD, Axial | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | NO | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 5μA | 25ns | Standard | 125A | 1 | 4A | 65pF @ 4V 1MHz | 200V | 5μA @ 200V | 890mV @ 4A | 4A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N3879 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | 1N3879 | DO-4 | 6A | 90A | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 50V | 50V | 200 ns | 200 ns | Standard | 50V | 6A | 50V | 15μA @ 50V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS215AGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/rohm-scs215aghrc-datasheets-0274.pdf | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 15A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 110W | 650V | 300μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 550pF @ 1V 1MHz | 650V | 300μA @ 600V | 1.55V @ 15A | 15A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| 1N3881R | GeneSiC Semiconductor | $7.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 1N3881R | 150°C | 1 | Rectifier Diodes | 6A | 90A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 200V | 200V | 200 ns | 200 ns | Standard, Reverse Polarity | 200V | 6A | 6A | 15μA @ 50V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-EPH3006-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vseph3006n3-datasheets-4497.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 14 Weeks | 2 | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | unknown | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 30A | 2V | 220A | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 30μA | 600V | 180A | 26 ns | 27 ns | Standard | 600V | 30A | 1 | 600V | 30μA @ 600V | 2.65V @ 30A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-60APU04-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60apu04n3-datasheets-4500.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 14 Weeks | 3 | yes | EAR99 | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 60A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 50μA | 400V | TO-247AC | 85 ns | Standard | 400V | 60A | 1 | 50μA @ 400V | 1.25V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| SCS215AMC | ROHM Semiconductor | $5.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2007 | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | No SVHC | 2 | EAR99 | 8541.10.00.80 | 39W | NOT SPECIFIED | SCS215 | Single | NOT SPECIFIED | 1 | 15A | 1.55V | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 200A | 300μA | 650V | 0ns | Silicon Carbide Schottky | 650V | 12A | 1 | 438pF @ 1V 1MHz | 240μA @ 600V | 1.55V @ 12A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| MSC010SDA120K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc010sda070k-datasheets-4425.pdf | TO-220-2 | 13 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | TO-220 [K] | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1200V | 1.5V @ 10A | 10A DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS206AGHRC | ROHM Semiconductor | $21.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohm-scs206aghrc-datasheets-0260.pdf | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 6A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 51W | 650V | 120μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 6A | 219pF @ 1V 1MHz | 650V | 120μA @ 600V | 1.55V @ 6A | 6A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||
| STTH3010WY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stth3010wy-datasheets-4539.pdf | DO-247-2 (Straight Leads) | 2 | 11 Weeks | 2 | ACTIVE (Last Updated: 6 months ago) | EAR99 | LOW LEAKAGE CURRENT | e3 | Matte Tin (Sn) | STTH30 | Single | 1 | Rectifier Diodes | 2V | 100μA | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 180A | 100 ns | 42 ns | Standard | 1kV | 30A | 1 | 1000V | 15μA @ 1000V | 2V @ 30A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWF10S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ewf12sm3-datasheets-5992.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 8EWF10 | 3 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-252AA | 270 ns | Standard | 1kV | 8A | 110A | 1 | 8A | 1000V | 100μA @ 1000V | 1.3V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| 1N3879R | GeneSiC Semiconductor | $7.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 1N3879R | 150°C | 1 | Rectifier Diodes | 6A | 90A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 50V | 50V | 200 ns | 200 ns | Standard, Reverse Polarity | 50V | 6A | 6A | 15μA @ 50V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4PJ-M3/86A | Vishay Semiconductor Diodes Division | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | AS4PJ | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 1.1V | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 350nA | 600V | 100A | 600V | TO-277A | 1.8 μs | 1.8 μs | Avalanche | 600V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 600V | 962mV @ 2A | 2.4A DC | -55°C~175°C | |||||||||||||||||||||||||||||
| SCS108AGC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs106agc-datasheets-4405.pdf | TO-220-2 | Lead Free | EAR99 | No | 8541.10.00.80 | 52W | 175°C | Single | 1 | Rectifier Diodes | 8A | 1.6V | No Recovery Time > 500mA (Io) | 32A | 160μA | 600V | 32A | 0 s | Silicon Carbide Schottky | 600V | 8A | 8A | 345pF @ 1V 1MHz | 160μA @ 600V | 1.7V @ 8A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UGF1008G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ugf1006gc0g-datasheets-4371.pdf | TO-220-3 Full Pack, Isolated Tab | 16 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 600V | 10μA @ 600V | 1.7V @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVBA1H100T3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-nrvba1h100t3g-datasheets-4179.pdf | DO-214AC, SMA | 4.57mm | 2.05mm | 2.92mm | Lead Free | 2 | 15 Weeks | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | YES | DUAL | J BEND | MBRA1H100 | 2 | Single | 1 | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 4μA | 100V | 50A | Schottky | 100V | 1A | 1A | 40μA @ 100V | 760mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| C3D08060G | Cree/Wolfspeed | $4.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Surface Mount | Tube | 175°C | -55°C | RoHS Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 11.05mm | 4.572mm | 10.312mm | 6 Weeks | Unknown | 2 | No | 100W | Single | TO-263-2 | 8A | 1.8V | 220A | 50μA | No Recovery Time > 500mA (Io) | 80A | 200μA | 600V | 220A | 0 s | Silicon Carbide Schottky | 600V | 8A | 441pF @ 0V 1MHz | 600V | 50μA @ 600V | 1.8V @ 8A | 24A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-60APU02-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs60apu02n3-datasheets-4490.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 60A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800A | 50μA | 200V | TO-247AC | 28 ns | Standard | 200V | 60A | 1 | 50μA @ 200V | 1.08V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| 1N3883 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3883-datasheets-0252.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3883 | DO-4 | 6A | 90A | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 400V | 400V | 200 ns | 200 ns | Standard | 400V | 6A | 400V | 15μA @ 50V | 1.4V @ 6A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3881 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 10 Weeks | 2 | PRODUCTION (Last Updated: 6 months ago) | 1N3881 | DO-4 | 6A | 90A | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 200V | 200V | 200 ns | 200 ns | Standard | 200V | 6A | 200V | 15μA @ 50V | 1.4V @ 6A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-EPU6006-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vsepu6006n3-datasheets-4412.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 14 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | SINGLE | NOT SPECIFIED | Common Cathode | NOT SPECIFIED | 1 | 60A | 1.4V | 220A | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 30μA | 600V | 110 ns | 30 ns | Standard | 600V | 60A | 1 | 600V | 30μA @ 600V | 1.5V @ 60A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| STPSC10065DY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, ECOPACK®2 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stpsc10065dy-datasheets-4415.pdf | TO-220-2 | 2 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | STPSC1006 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 650V | 130μA | TO-220AC | 0ns | Silicon Carbide Schottky | 39A | 1 | 10A | 670pF @ 0V 1MHz | 650V | 130μA @ 650V | 1.45V @ 10A | 10A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| STTH15RQ06DY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stth8l02ddjfytr-datasheets-4388.pdf | TO-220-2 | 2 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | FREE WHEELING DIODE | NO | SINGLE | NOT SPECIFIED | STTH15R | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 20μA | TO-220AC | 50ns | Standard | 120A | 1 | 600V | 20μA @ 600V | 2.95V @ 15A | 15A | -40°C~175°C |
