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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N459TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2004 | /files/onsemiconductor-1n459a-datasheets-0782.pdf | 200V | 500mA | 1.91mm | DO-204AH, DO-35, Axial | 4.56mm | Lead Free | 2 | 2 Weeks | 80g | 2 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | 8541.10.00.70 | e3 | WIRE | 1N459 | Single | 500mW | 1 | Rectifier Diodes | 500mA | 500mA | 1V | 4A | ISOLATED | 300 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 25nA | 200V | 4A | 200V | Standard | 200V | 500mA | 6pF @ 0V 1MHz | 25nA @ 175V | 1V @ 100mA | 175°C Max | |||||||||||||||||||||||||||||||||||||||
| SCS215KGC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 | 9.8mm | 15.37mm | 4.45mm | Lead Free | 2 | 12 Weeks | No SVHC | 2 | EAR99 | not_compliant | 8541.10.00.80 | NOT SPECIFIED | SCS215 | Single | NOT SPECIFIED | 180W | 1 | 15A | 1.4V | CATHODE | GENERAL PURPOSE | 0.8 °C/W | No Recovery Time > 500mA (Io) | 240A | 300μA | 1.2kV | 240A | 0 s | Silicon Carbide Schottky | 1.2kV | 15A | 1 | 790pF @ 1V 1MHz | 1200V | 300μA @ 1200V | 1.6V @ 15A | 15A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| SCS215AEC | ROHM Semiconductor | $6.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | TO-247-3 | Lead Free | 3 | 12 Weeks | 38.000013g | No SVHC | 3 | EAR99 | not_compliant | 8541.10.00.80 | 110W | NOT SPECIFIED | SCS215 | Single | NOT SPECIFIED | 1 | 15A | 1.55V | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 200A | 300μA | 650V | 0 s | Silicon Carbide Schottky | 650V | 15A | 1 | 550pF @ 1V 1MHz | 300μA @ 600V | 1.55V @ 15A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA30PB120-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vshfa30pb120n3-datasheets-4812.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 30A | 5.7V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350W | 120A | 40μA | 1.2kV | 120A | 170 ns | Standard | 1.2kV | 30A | 1 | 1200V | 40μA @ 1200V | 4.1V @ 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| MSC030SDA070K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc010sda070k-datasheets-4425.pdf | TO-220-3 | 13 Weeks | TO-220-3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 700V | 1.5V @ 30A | 30A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS210AGHRC | ROHM Semiconductor | $3.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohm-scs210aghrc-datasheets-0347.pdf | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 10A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 78W | 650V | 200μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 365pF @ 1V 1MHz | 650V | 200μA @ 600V | 1.55V @ 10A | 10A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFL60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.151kA | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.369kA | 100μA | 600V | 1.151kA | 600V | 500 ns | 500 ns | Standard | 600V | 85A | 1 | 100μA @ 600V | 1.75V @ 266.9A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SCS220AGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 20A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 130W | 650V | 400μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 730pF @ 1V 1MHz | 650V | 400μA @ 600V | 1.55V @ 20A | 20A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FR85G02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.4V | 1.369kA | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.369kA | 25μA | 400V | 400V | 200 ns | 200 ns | Standard | 400V | 85A | 1 | 25μA @ 100V | 1.4V @ 85A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4154TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-1n4154tap-datasheets-4717.pdf | 300mA | DO-204AH, DO-35, Axial | 2 | 11 Weeks | EAR99 | Silver, Tin | 8541.10.00.70 | e2 | Tin/Silver (Sn/Ag) | 500mW | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | 300mA | 1V | 2A | 100nA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 35V | 2A | 4 ns | 4 ns | Standard | 25V | 150mA | 0.15A | 4pF @ 0V 1MHz | 100nA @ 25V | 1V @ 30mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| S85VR | GeneSiC Semiconductor | $13.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.1V | 1.05kA | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.4kV | 1.4kV | Standard, Reverse Polarity | 1.4kV | 85A | 1 | 1400V | 10μA @ 100V | 1.1V @ 85A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| BAW76-TAP | Vishay Semiconductor Diodes Division | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-baw76tap-datasheets-4713.pdf | 100mA | DO-204AH, DO-35, Axial | 11 Weeks | 2 | Silver, Tin | No | Single | DO-35 | 150mA | 1V | 2A | 100nA | Fast Recovery =< 500ns, > 200mA (Io) | 75V | 2A | 4 ns | 4 ns | Standard | 50V | 300mA | 2pF @ 0V 1MHz | 50V | 100nA @ 50V | 1V @ 100mA | 300mA DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH09G65C5XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idh09g65c5xksa2-datasheets-4752.pdf | TO-220-2 | Lead Free | 2 | 18 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 160μA | 0 s | Silicon Carbide Schottky | 650V | 9A | 396A | 1 | 9A | 270pF @ 1V 1MHz | 160μA @ 650V | 1.7V @ 9A | 9A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS210KE2C | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | ROHS3 Compliant | 2011 | /files/rohm-scs210ke2c-datasheets-0330.pdf | TO-247-3 | 5.9mm | 20.95mm | 5.03mm | Lead Free | 3 | 12 Weeks | Unknown | 3 | EAR99 | not_compliant | 8541.10.00.80 | NOT SPECIFIED | SCS210 | Single | NOT SPECIFIED | 170W | 2 | 10A | 1.4V | GENERAL PURPOSE | 1.8 °C/W | No Recovery Time > 500mA (Io) | 100μA | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 10A | 1 | 5A | 1200V | 10A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| SCS120AGC | ROHM Semiconductor | $9.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs106agc-datasheets-4405.pdf | TO-220-2 | Lead Free | 2 | EAR99 | No | 8541.10.00.80 | 97W | 175°C | Single | 1 | Rectifier Diodes | 20A | 1.5V | 80A | 400μA | No Recovery Time > 500mA (Io) | 400μA | 600V | 80A | 0 s | Silicon Carbide Schottky | 600V | 20A | 860pF @ 1V 1MHz | 400μA @ 600V | 1.7V @ 20A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBD6050LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-mmbd6050lt1g-datasheets-7127.pdf | 70V | 100mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.10.00.70 | e3 | Tin (Sn) | Halogen Free | NO | AXIAL | WIRE | 260 | MMBD6050 | 3 | Single | 40 | 225mW | 1 | Rectifier Diodes | 200mA | 200mA | 1.1V | 500mA | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 100nA | 70V | 500mA | 4 ns | 4 ns | Standard | 70V | 200mA | 100nA @ 50V | 1.1V @ 100mA | 200mA DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| C3D08065I | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | RoHS Compliant | 2013 | /files/cree-c3d08065i-datasheets-0298.pdf | TO-220-2 Isolated Tab | 6 Weeks | 6.000006g | Unknown | 2 | 48W | Single | 8A | 1.8V | No Recovery Time > 500mA (Io) | 69A | 60μA | 650V | 0ns | Silicon Carbide Schottky | 650V | 8A | 441pF @ 0V 1MHz | 60μA @ 650V | 1.8V @ 8A | 16.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3892R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N3892R | 150°C | 1 | O-MUPM-D1 | 12A | 90A | SINGLE | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 300V | 300V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 12A | 1 | 25μA @ 50V | 1.4V @ 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS112AGC | ROHM Semiconductor | $4.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs106agc-datasheets-4405.pdf | TO-220-2 | Lead Free | 2 | EAR99 | No | 8541.10.00.80 | 80W | 175°C | Single | 1 | Rectifier Diodes | 12A | 1.5V | 48A | 240μA | No Recovery Time > 500mA (Io) | 240μA | 600V | 48A | 0 s | Silicon Carbide Schottky | 600V | 12A | 516pF @ 1V 1MHz | 240μA @ 600V | 1.7V @ 12A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH1512PI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth1512pi-datasheets-4706.pdf | DOP3I-2 Insulated (Straight Leads) | Lead Free | 2 | 8 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | STTH1512 | 2 | Single | 1 | Rectifier Diodes | 15A | 2.1V | 150A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 15μA | 1.2kV | 200A | 1.2kV | 105 ns | 53 ns | Standard | 1.2kV | 15A | 1 | 1200V | 15μA @ 1200V | 2.1V @ 15A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||
| STTH6010WY |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR40MR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 500A | SINGLE | ANODE | 0.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard, Reverse Polarity | 1kV | 40A | 1 | 1000V | 25μA @ 100V | 1V @ 40A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| C4D10120H | Cree/Wolfspeed | $4.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Tube | 1 (Unlimited) | TO-247-2 | 11 Weeks | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 754pF @ 0V 1MHz | 1200V | 250μA @ 1200V | 1.8V @ 10A | 31.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAW75-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-baw75tap-datasheets-4724.pdf | 300mA | DO-204AH, DO-35, Axial | 11 Weeks | 2 | Silver, Tin | Single | DO-35 | 150mA | 1V | 2A | 100nA | Fast Recovery =< 500ns, > 200mA (Io) | 35V | 2A | 4ns | 4 ns | Standard | 25V | 300mA | 4pF @ 0V 1MHz | 25V | 100nA @ 25V | 1V @ 30mA | 300mA DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-150EBU04HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs150ebu04hf4-datasheets-4648.pdf | PowerTab® | 1 | 14 Weeks | 2 | EAR99 | No | 8541.10.00.80 | UNSPECIFIED | Single | 1 | R-PSFM-X1 | 1.5kA | CATHODE | ULTRA FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 400V | 1.5kA | 400V | 93 ns | Standard | 400V | 150A | 1500A | 1 | 50μA @ 150V | 1.3V @ 150A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5617US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.6V | ISOLATED | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 150 ns | Standard | 400V | 1A | 1A | 35pF @ 12V 1MHz | 500nA @ 400V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| STBR6012W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stbr6012w-datasheets-4662.pdf | DO-247-2 (Straight Leads) | 2 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | STBR60 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 60A | SINGLE | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | 5μA | Standard | 1 | 1200V | 5μA @ 1200V | 1.3V @ 60A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3883R | GeneSiC Semiconductor | $6.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3883r-datasheets-0293.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 1N3883R | 150°C | 1 | Rectifier Diodes | 6A | 90A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 400V | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 6A | 6A | 15μA @ 50V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS215KGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/rohm-scs215kghrc-datasheets-0294.pdf | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 15A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 180W | 1200V | 300μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 790pF @ 1V 1MHz | 1200V | 300μA @ 1200V | 1.6V @ 15A | 15A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80EBU04HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs80ebu04hf4-datasheets-4683.pdf | PowerTab® | 1 | 14 Weeks | 2 | EAR99 | No | 8541.10.00.80 | UNSPECIFIED | Single | 1 | R-PSFM-X1 | 80A | 1.3V | 800A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 400V | 800A | 87 ns | 50 ns | Standard | 400V | 80A | 1 | 400V | 50μA @ 400V | 1.3V @ 80A | -55°C~175°C |
