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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | RMS Current (Irms) | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SCS306APC9 | ROHM Semiconductor | $4.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 6A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 46W | 30μA | TO-220AC | 0ns | Silicon Carbide Schottky | 650V | 6A | 1 | 6A | 300pF @ 1V 1MHz | 30μA @ 650V | 1.5V @ 6A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI30-12A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei3012a-datasheets-0489.pdf | 1.2kV | 26A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | 3 | Single | 138W | 1 | Rectifier Diodes | 26A | 26A | 2.55V | 210A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 210A | 750μA | 1.2kV | 210A | 1.2kV | 60 ns | 60 ns | Standard | 1.2kV | 26A | 1 | 1200V | 750μA @ 1200V | 2.55V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| SCS310APC9 | ROHM Semiconductor | $6.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 10A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 71W | 50μA | TO-220AC | 0ns | Silicon Carbide Schottky | 650V | 10A | 1 | 500pF @ 1V 1MHz | 50μA @ 650V | 1.5V @ 10A | 10A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| FFH60UP40S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | ROHS3 Compliant | /files/onsemiconductor-ffh60up40s-datasheets-0505.pdf | TO-247-2 | 2 | 4 Weeks | 6.33g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | HIGH RELIABILITY, FREEWHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 60A | 1.3V | 600A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 100μA | 400V | 600A | 400V | 85 ns | 85 ns | Standard | 400V | 60A | 1 | 100μA @ 400V | 1.3V @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| STPSC10H12D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ECOPACK®2 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stpsc10h12d-datasheets-0529.pdf | TO-220-2 | 2 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | STPSC10 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 10A | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 1200V | 60μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 725pF @ 0V 1MHz | 1200V | 60μA @ 1200V | 1.5V @ 10A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D12065A | Cree/Wolfspeed | $4.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2016 | TO-220-2 | 11 Weeks | TO-220-2 | 35A | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 641.5pF @ 0V 1MHz | 650V | 74μA @ 650V | 1.8V @ 12A | 35A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-12FR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 16A | 280A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 1.2kV | 370A | 1.2kV | Standard, Reverse Polarity | 1.2kV | 12A | 1 | 1200V | 12mA @ 1200V | 1.26V @ 38A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1206RA | Vishay Semiconductor Diodes Division | $4.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Unknown | 2 | 1N1206 | Single | DO-203AA | 12A | 1.35V | 240A | Standard Recovery >500ns, > 200mA (Io) | 285A | 1mA | 600V | 240A | 600V | Standard, Reverse Polarity | 600V | 12A | 600V | 1mA @ 600V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1184A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1184 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 1.3V | 800A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 100V | 800A | 100V | Standard | 100V | 40A | 1 | 2.5mA @ 100V | 1.3V @ 126A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| DSEI60-02A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei6002a-datasheets-0545.pdf | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 69A | 880mV | 650A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150W | 650A | 50μA | 200V | 650A | 200V | 50 ns | 50 ns | Standard | 200V | 69A | 1 | 50μA @ 200V | 1.08V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| IDW10G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw10g65c5xksa1-datasheets-0458.pdf | TO-247-3 | 3 | 18 Weeks | 3 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | 10A | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 150W | 220μA | 0 s | Silicon Carbide Schottky | 650V | 10A | 1 | 300pF @ 1V 1MHz | 180μA @ 650V | 1.7V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| STTH6010W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth6010w-datasheets-0462.pdf | 1kV | 60A | DO-247-2 (Straight Leads) | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NOT SPECIFIED | STTH6010 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 60A | 60A | 2V | 400A | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400A | 20μA | 1kV | 400A | 1kV | 115 ns | 115 ns | Standard | 1kV | 60A | 1 | 1000V | 20μA @ 1000V | 2V @ 60A | 175°C Max | |||||||||||||||||||||||||||||||||||
| HERAF808G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-heraf808gc0g-datasheets-0363.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.7V @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDP40E65D2XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-idp40e65d2xksa1-datasheets-0366.pdf | TO-220-2 | Lead Free | 16 Weeks | Unknown | 2 | yes | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 40A | 1.6V | Fast Recovery =< 500ns, > 200mA (Io) | 250A | 650V | 250A | 36 ns | Standard | 650V | 40A | 80A | 40μA @ 650V | 2.3V @ 40A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| STTH8R06DIRG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth8r06fp-datasheets-0239.pdf | 600V | 8A | TO-220-2 Insulated, TO-220AC | 10.4mm | 9.15mm | 4.6mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | STTH8R06 | 3 | Single | 1 | Rectifier Diodes | 8A | 8A | 2.9V | 24A | 80A | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY | 3.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 30μA | 600V | 80A | 600V | 45 ns | 45 ns | Standard | 600V | 8A | 1 | 30μA @ 600V | 2.9V @ 8A | 175°C Max | ||||||||||||||||||||||||||||||||||
| FESF16JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 Full Pack, Isolated Tab | Lead Free | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 1.5V | 250A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 250A | 600V | 50 ns | 50 ns | Standard | 600V | 16A | 1 | 10μA @ 600V | 1.5V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| ISL9R3060G2-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Stealth™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | TO-247-2 | 4 Weeks | 6.33g | yes | not_compliant | Single | 1 | Rectifier Diodes | 30A | 2.4V | 90A | Fast Recovery =< 500ns, > 200mA (Io) | 90A | 100μA | 600V | 45 ns | 31 ns | Standard | 600V | 30A | 600V | 100μA @ 600V | 2.4V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWS12S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ews12sm3-datasheets-0406.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 8EWS12 | 3 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HIGH VOLTAGE HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-252AA | Standard | 1.2kV | 8A | 120A | 1 | 8A | 1200V | 50μA @ 1200V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| STBR6012WY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, ECOPACK®2 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stbr6012wy-datasheets-0411.pdf | DO-247-2 (Straight Leads) | 11 Weeks | STBR60 | 60A | Standard Recovery >500ns, > 200mA (Io) | Standard | 1200V | 5μA @ 1200V | 1.3V @ 60A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSP08120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ffsp08120a-datasheets-0415.pdf | TO-220-2 | 2 | 10 Weeks | 2.16g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | HIGH RELIABILITY, PD-CASE | 8541.10.00.80 | e3 | Tin (Sn) | 175°C | Single | 1 | R-PSFM-T2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | 166W | 1200V | 68A | 1.2kV | 200μA | TO-220AC | Silicon Carbide Schottky | 1 | 8A | 538pF @ 1V 100kHz | 1200V | 200μA @ 1200V | 1.75V @ 8A | 8A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| LSIC2SD120A05 | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Gen2 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/littelfuseinc-lsic2sd120a05-datasheets-0429.pdf | TO-220-2 | 2 | 23 Weeks | EAR99 | PD-CASE | unknown | 8541.10.00.80 | NO | SINGLE | 260 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 17.5A | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 100W | 1200V | 100μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 310pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 5A | 17.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| FFH60UP60S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-ffh60up60s3-datasheets-0312.pdf | TO-247-2 | 15.95mm | 21mm | 5.03mm | Lead Free | 2 | 4 Weeks | 6.33g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) | Single | 1 | Rectifier Diodes | 60A | 1.7V | 600A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 100μA | 600V | 600A | 600V | 80 ns | 80 ns | Standard | 600V | 60A | 1 | 100μA @ 600V | 1.7V @ 60A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| APT75DQ60BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf&product=microsemicorporation-apt75dq60bg-5978059 | 600V | 75A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | HIGH RELIABILITY, FREE WHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | R-PSFM-T3 | 75A | 75A | 2.5V | 600A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600A | 31 ns | 29 ns | Standard | 600V | 75A | 1 | 600V | 25μA @ 600V | 2.5V @ 75A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| BYT79-500,127 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | /files/weensemiconductors-byt79500127-datasheets-2241.pdf | TO-220-2 | 2 | not_compliant | e3 | Tin (Sn) | IEC-134 | NO | SINGLE | BYT79-500 | 150°C | 1 | R-PSFM-T2 | 14A | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50μA | TO-220AC | 60ns | Standard | 1 | 500V | 50μA @ 500V | 1.38V @ 30A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETH1506FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vseth1506fpm3-datasheets-0453.pdf | TO-220-2 Full Pack | 10.36mm | 16.07mm | 4.93mm | 2 | 14 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | ETH1506 | 2 | Single | 1 | Rectifier Diodes | 15A | 2.45V | 160A | ISOLATED | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 160A | 10nA | 600V | 160A | 600V | 36 ns | 29 ns | Standard | 600V | 15A | 1 | 15μA @ 600V | 2.45V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| APT15D100BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt15d100bg-datasheets-0456.pdf | 1kV | 15A | TO-247-2 | Lead Free | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | 8541.10.00.80 | e1 | TIN SILVER COPPER | APT15D100 | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 15A | 15A | 2.3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 1kV | 80A | 260 ns | Standard | 1kV | 15A | 1 | 1000V | 250μA @ 1000V | 2.3V @ 15A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-6EWH06FN-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs6ewh06fntrm3-datasheets-1939.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | Unknown | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 6EWH06 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 6A | 2.1V | 70A | CATHODE | HYPER ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 70A | 50μA | 600V | 70A | TO-252AA | 25 ns | 27 ns | Standard | 600V | 6A | 1 | 6A | 600V | 50μA @ 600V | 2.1V @ 6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| STTH506DTI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth506dti-datasheets-0281.pdf | 600V | 5A | TO-220-2 Insulated, TO-220AC | 10.4mm | 15.9mm | 4.6mm | Lead Free | 2 | 11 Weeks | 2 | ACTIVE (Last Updated: 6 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | STTH506 | 3 | Single | 1 | Rectifier Diodes | 5A | 14A | 3.6V | 60A | ISOLATED | HYPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 6μA | 600V | 60A | 600V | 25 ns | 25 ns | Standard | 600V | 5A | 1 | 6μA @ 600V | 3.6V @ 5A | 175°C Max | ||||||||||||||||||||||||||||||||||||||
| STTH812D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth812d-datasheets-0284.pdf | 1.2kV | 8A | TO-220-2 | 7pF | 10.4mm | 4.6mm | 9.15mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | STTH812 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 8A | 8A | 600mV | 80A | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 8μA | 1.2kV | 80A | 1.2kV | 100 ns | 100 ns | Standard | 1.2kV | 8A | 1 | 1200V | 8μA @ 1200V | 2.2V @ 8A | 175°C Max | |||||||||||||||||||||||||||||||
| STTH3012D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth3012d-datasheets-0288.pdf | 1.2kV | 30A | TO-220-2 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | STTH30 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | 30A | 2.25V | 210A | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 210A | 20μA | 1.2kV | 210A | 1.2kV | 115 ns | 115 ns | Standard | 1.2kV | 30A | 1 | 1200V | 20μA @ 1200V | 2.25V @ 30A | 175°C Max |
