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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-1N1201A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 31.8mm | 11mm | 13 Weeks | Unknown | 2 | 1N1201 | Single | DO-203AA | 12A | 1.35V | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 2.25mA | 150V | 150V | Standard | 150V | 12A | 150V | 2.25mA @ 150V | 1.35V @ 12A | 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT4045BP-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vbt4045bpe34w-datasheets-0656.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4394mm | 9.144mm | 4.826mm | Lead Free | 2 | 14 Weeks | 2 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | VBT4045 | 3 | Common Anode | 1 | Rectifier Diodes | 40A | 670mV | 240A | 3mA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3mA | 45V | 240A | Schottky | 45V | 40A | 1 | 3mA @ 45V | 670mV @ 40A | 40A DC | 200°C Max | |||||||||||||||||||||||||||||||||||||
| VS-1N1184 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 36.9062mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1184 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.7V | 400A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500A | 10mA | 100V | 400A | 100V | Standard | 100V | 35A | 1 | 10mA @ 100V | 1.7V @ 110A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||
| 1N6643US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6643us-datasheets-0665.pdf | SQ-MELF, B | Contains Lead | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 20 ns | Standard | 50V | 300mA | 0.3A | 5pF @ 0V 1MHz | 50nA @ 50V | 1.2V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-60EPS16-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60eps16m3-datasheets-0667.pdf | TO-247-2 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Standard | 1.6kV | 60A | 950A | 1 | 1600V | 100μA @ 1600V | 1.15V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RFN20TJ6SGC9 | ROHM Semiconductor | $1.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | 2017 | TO-220-2 Full Pack | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 140ns | Standard | 150A | 1 | 20A | 600V | 10μA @ 600V | 1.55V @ 20A | 20A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.369kA | 9mA | 600V | 1.8kA | 600V | 500 ns | Standard | 600V | 85A | 1 | 9mA @ 600V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||
| C4D20120H | Cree/Wolfspeed | $18.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Tube | 1 (Unlimited) | TO-247-2 | 11 Weeks | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1.5nF @ 0V 1MHz | 1200V | 200μA @ 1200V | 1.8V @ 20A | 54A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS220AJHRTLL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-scs220ajhrtll-datasheets-0513.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | e2 | Tin/Copper (Sn/Cu) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 107W | 650V | 400μA | 0ns | Silicon Carbide Schottky | 53A | 1 | 20A | 730pF @ 1V 1MHz | 650V | 400μA @ 600V | 1.55V @ 20A | 20A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| C5D10170H | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Not Applicable | TO-247-2 | 11 Weeks | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 830pF @ 0V 1MHz | 1700V | 200μA @ 1700V | 1.8V @ 10A | 33A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80EBU02 | Vishay Semiconductor Diodes Division | $4.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Panel, Screw | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80ebu02-datasheets-0619.pdf | PowerTab™, PowIRtab™ | 15.9mm | 4.95mm | 12.4mm | 14 Weeks | 2 | No | Single | PowIRtab™ | 80A | 1.13V | 800A | Standard Recovery >500ns, > 200mA (Io) | 800A | 50μA | 200V | 800A | 200V | 35 ns | 35 ns | Standard | 200V | 50μA @ 200V | 1.13V @ 80A | 80A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR10100-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-mbr10100e34w-datasheets-0621.pdf | TO-220-2 | 10.54mm | 15.32mm | 4.7mm | Lead Free | 2 | 10 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR10100 | 3 | Single | 1 | Rectifier Diodes | 10A | 800mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 100μA | 100V | 150A | Schottky | 100V | 10A | 1 | 100μA @ 100V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SCS205KGHRC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | TO-220-2 | 2 | 12 Weeks | yes | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 5A | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 88W | 1200V | 100μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 5A | 270pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.6V @ 5A | 5A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N5802 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5802-datasheets-0547.pdf | A, Axial | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Yes | Single | 975mV | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 50V | 35A | 25 ns | Standard | 50V | 1A | 25pF @ 10V 1MHz | 50V | 1μA @ 50V | 875mV @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPH06-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs30eph06n3-datasheets-0644.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 30A | 1.34V | 300A | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300nA | 31 ns | 31 ns | Standard | 600V | 30A | 1 | 600V | 50μA @ 600V | 2.6V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| STPSC20065WY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, ECOPACK®2 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stpsc20065wy-datasheets-0549.pdf | DO-247-2 (Straight Leads) | 2 | 14 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | FREE WHEELING DIODE | NO | NOT SPECIFIED | STPSC2006 | 175°C | Single | NOT SPECIFIED | 1 | 20A | HIGH VOLTAGE POWER | No Recovery Time > 500mA (Io) | 650V | 300μA | 0ns | Silicon Carbide Schottky | 1 | 1250pF @ 0V 1MHz | 650V | 300μA @ 650V | 1.45V @ 20A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30APF10-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs30apf10m3-datasheets-0552.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 450 ns | Standard | 1kV | 30A | 350A | 1 | 1000V | 100μA @ 1000V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| MSC010SDA120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc010sda070k-datasheets-4425.pdf | TO-247-2 | 13 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | TO-247 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1200V | 1.5V @ 10A | 10A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSIC2SD120A10 | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Gen2 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/littelfuseinc-lsic2sd120a10-datasheets-0561.pdf | TO-220-2 | 2 | 23 Weeks | EAR99 | PD-CASE | unknown | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 28A | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 136W | 1200V | 100μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 582pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 10A | 28A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10065D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ECOPACK®2 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stpsc10065d-datasheets-0567.pdf | TO-220-2 | 2 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | STPSC1006 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 10A | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 650V | 130μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 670pF @ 0V 1MHz | 650V | 130μA @ 650V | 1.45V @ 10A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH30R06PI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth30r06pi-datasheets-0573.pdf | 600V | 30A | DOP3I-2 Insulated (Straight Leads) | 15.5mm | 4.6mm | 13.1mm | Lead Free | 2 | 8 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | STTH30 | 2 | Single | 1 | Rectifier Diodes | 30A | 30A | 1.85V | 160A | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 160A | 25μA | 600V | 300A | 600V | 70 ns | 70 ns | Standard | 600V | 30A | 1 | 25μA @ 600V | 1.85V @ 30A | 175°C Max | |||||||||||||||||||||||||||||||||||
| STPSC10H12DY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, ECOPACK® | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | /files/stmicroelectronics-stpsc10h12dy-datasheets-0578.pdf | TO-220-2 | 2 | 14 Weeks | NO | SINGLE | NOT SPECIFIED | STPSC10 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 10A | SINGLE | CATHODE | HIGH VOLTAGE POWER | No Recovery Time > 500mA (Io) | 1200V | 60μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 725pF @ 0V 1MHz | 1200V | 60μA @ 1200V | 1.5V @ 10A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH12G65C5XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idh12g65c5xksa2-datasheets-0583.pdf | TO-220-2 | Lead Free | 18 Weeks | yes | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 12A | 1.7V | No Recovery Time > 500mA (Io) | 650V | 97A | 0ns | Silicon Carbide Schottky | 650V | 12A | 360pF @ 1V 1MHz | 190μA @ 650V | 1.7V @ 12A | 12A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D10065I | Cree/Wolfspeed | $5.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2013 | TO-220-2 Isolated Tab | 6 Weeks | Unknown | 2 | No | 60W | Single | TO-220-2 Isolated Tab | 10A | 1.8V | 80A | 250μA | 2.6 °C/W | No Recovery Time > 500mA (Io) | 80A | 650V | 80A | 0 s | Silicon Carbide Schottky | 650V | 10A | 480pF @ 0V 1MHz | 650V | 50μA @ 650V | 19A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH3010PI | STMicroelectronics | $1.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stth3010pi-datasheets-0592.pdf | DOP3I-2 Insulated (Straight Leads) | 2 | 8 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | STTH30 | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 100ns | Standard | 180A | 1 | 30A | 1000V | 15μA @ 1000V | 2V @ 30A | 30A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| IDW12G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idw12g65c5xksa1-datasheets-0612.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | 76W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 12A | 71A | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 190μA | 650V | 71A | 0ns | Silicon Carbide Schottky | 1 | 360pF @ 1V 1MHz | 190μA @ 650V | 1.7V @ 12A | 12A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| BY228GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-by228gpe354-datasheets-9599.pdf | 5.3mm | DO-201AD, Axial | 9.5mm | 9.5mm | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | WIRE | BY228GP | 2 | Single | 1 | Rectifier Diodes | 2.5A | 1.6V | 50A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.5kV | 50A | 1.5kV | 2 μs | 20 μs | Standard | 1.5kV | 2.5A | 1 | 40pF @ 4V 1MHz | 1500V | 5μA @ 1500V | 1.6V @ 2.5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| VS-1N1206RA | Vishay Semiconductor Diodes Division | $4.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Unknown | 2 | 1N1206 | Single | DO-203AA | 12A | 1.35V | 240A | Standard Recovery >500ns, > 200mA (Io) | 285A | 1mA | 600V | 240A | 600V | Standard, Reverse Polarity | 600V | 12A | 600V | 1mA @ 600V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1184A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1184 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 1.3V | 800A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 100V | 800A | 100V | Standard | 100V | 40A | 1 | 2.5mA @ 100V | 1.3V @ 126A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
| DSEI60-02A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei6002a-datasheets-0545.pdf | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 69A | 880mV | 650A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150W | 650A | 50μA | 200V | 650A | 200V | 50 ns | 50 ns | Standard | 200V | 69A | 1 | 50μA @ 200V | 1.08V @ 60A | -40°C~150°C |
