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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| FGA60N60UFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/onsemiconductor-fga60n60ufdtu-datasheets-6151.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 3 | 6 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 298W | Single | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 298W | 47 ns | 600V | 600V | 83 ns | 600V | 120A | 204 ns | 400V, 60A, 5 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 60A | Field Stop | 188nC | 180A | 23ns/130ns | 1.81mJ (on), 810μJ (off) | 80ns | |||||||||||||||||||||||||||||
| RGW00TK65DGVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw00tk65dgvc11-datasheets-6158.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 89W | 95ns | 72 ns | 650V | 45A | 273 ns | 400V, 50A, 10 Ω, 15V | 1.9V @ 15V, 50A | Trench Field Stop | 141nC | 200A | 52ns/180ns | 1.18mJ (on), 960μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| RGW00TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw00ts65dgc11-datasheets-6161.pdf | TO-247-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 254W | 95ns | 72 ns | 650V | 96A | 273 ns | 400V, 50A, 10 Ω, 15V | 1.9V @ 15V, 50A | Trench Field Stop | 141nC | 200A | 52ns/180ns | 1.18mJ (on), 960μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IKW15N120T2FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ikw15n120t2fksa1-datasheets-6102.pdf | TO-247-3 | 3 | 14 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 235W | TO-247AD | 300ns | 61 ns | 1200V | 30A | 626 ns | 600V, 15A, 41.8 Ω, 15V | 2.2V @ 15V, 15A | Trench | 93nC | 60A | 32ns/362ns | 2.05mJ | |||||||||||||||||||||||||||||||||||||
| FGA50T65SHD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-fga50t65shd-datasheets-6164.pdf | TO-3P-3, SC-65-3 | 4 Weeks | 6.401g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 319W | NOT SPECIFIED | NOT SPECIFIED | 319W | 34.6 ns | 650V | 2.14V | 2.1V | 100A | 400V, 50A, 6 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 87nC | 150A | 22.4ns/73.6ns | 1.28mJ (on), 384μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| RGW00TK65GVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw00tk65gvc11-datasheets-6105.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 89W | 72 ns | 650V | 45A | 273 ns | 400V, 50A, 10 Ω, 15V | 1.9V @ 15V, 50A | Trench Field Stop | 141nC | 200A | 52ns/180ns | 1.18mJ (on), 960μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| RGW60TK65DGVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgw60tk65dgvc11-datasheets-6171.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 72W | 92ns | 50 ns | 650V | 33A | 209 ns | 400V, 30A, 10 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 84nC | 120A | 37ns/114ns | 480μJ (on), 490μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| FGHL50T65SQ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | /files/onsemiconductor-fghl50t65sq-datasheets-6108.pdf | TO-247-3 | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 268W | 650V | 100A | 400V, 25A, 4.7 Ω, 15V | 2.1V @ 15V, 50A | 99nC | 200A | 19ns/93ns | 410μJ (on), 88μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH40N60SMD-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgh40n60smdf085-datasheets-6112.pdf | TO-247-3 | 3 | 6 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 349W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 349W | TO-247AB | 47 ns | 600V | 2.1V | 43.7 ns | 600V | 80A | 172.5 ns | 400V, 40A, 6 Ω, 15V | 20V | 6V | 2.5V @ 15V, 40A | Field Stop | 180nC | 120A | 18ns/110ns | 920μJ (on), 300μJ (off) | 81ns | |||||||||||||||||||||||||||||||
| FGH40N60SFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-fgh40n60sftu-datasheets-9017.pdf | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | 3 | 9 Weeks | 6.39g | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 290W | FGH40N60 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | 1.2kV | TO-247AB | 600V | 2.3V | 67 ns | 600V | 80A | 150 ns | 400V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.9V @ 15V, 40A | Field Stop | 120nC | 120A | 25ns/115ns | 1.13mJ (on), 310μJ (off) | 54ns | |||||||||||||||||||||||||||
| FGH40T65SHDF-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgh40t65shdff155-datasheets-6046.pdf | TO-247-3 | 6 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | Tin | 268W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 268W | 101 ns | 650V | 1.45V | 650V | 80A | 400V, 40A, 6 Ω, 15V | 20V | 7.5V | 1.81V @ 15V, 40A | Field Stop | 68nC | 120A | 18ns/64ns | 1.22mJ (on), 440μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| HGTG30N60B3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-hgtg30n60b3-datasheets-9026.pdf | 600V | 60A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 4 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | Tin | No | 8541.29.00.95 | e3 | NPN | 208W | HGTG30N60 | Single | 208W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | 60A | 600V | 600V | 1.45V | 56 ns | 600V | 60A | 365 ns | 480V, 30A, 3 Ω, 15V | 20V | 6V | 1.9V @ 15V, 30A | 170nC | 220A | 36ns/137ns | 500μJ (on), 680μJ (off) | 150ns | ||||||||||||||||||||||||
| STGW40H65DFB-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HB | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | RoHS Compliant | /files/stmicroelectronics-stgw40h65dfb4-datasheets-6060.pdf | TO-247-4 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STGW40 | NOT SPECIFIED | 283W | 62ns | 650V | 80A | 400V, 40A, 5 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 210nC | 160A | 40ns/142ns | 200μJ (on), 410μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW15N120BH6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/infineontechnologies-ikw15n120bh6xksa1-datasheets-6062.pdf | TO-247-3 | 26 Weeks | 200W | 340ns | 1200V | 30A | 600V, 15A, 22 Ω, 15V | 2.3V @ 15V, 15A | Trench Field Stop | 92nC | 60A | 18ns/240ns | 700μJ (on), 550μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HGTG12N60C3D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 1997 | /files/onsemiconductor-hgtg12n60c3d-datasheets-9037.pdf | 600V | 24A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 36 Weeks | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 104W | HGTG12N60 | Single | 104W | 1 | SILICON | POWER CONTROL | N-CHANNEL | 42 ns | 600V | 1.65V | 30 ns | 600V | 24A | 480 ns | 2.2V @ 15V, 15A | 48nC | 96A | 380μJ (on), 900μJ (off) | ||||||||||||||||||||||||||||||||
| FGAF40N60UFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-fgaf40n60ufdtu-datasheets-6074.pdf | 600V | 40A | TO-3P-3 Full Pack | 15.5mm | 26.5mm | 5.5mm | Lead Free | 3 | 36 Weeks | 6.962g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 100W | Single | 100W | 1 | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 95 ns | 600V | 3.1V | 67 ns | 600V | 40A | 190 ns | 300V, 20A, 10 Ω, 15V | 3V @ 15V, 20A | 77nC | 160A | 15ns/65ns | 470μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||
| FGH60N60SFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | 3 | 5 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 378W | FGH60N60 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 378W | TO-247AB | 47 ns | 600V | 66 ns | 600V | 120A | 187 ns | 400V, 60A, 5 Ω, 15V | 20V | 6.5V | 2.9V @ 15V, 60A | Field Stop | 198nC | 180A | 22ns/134ns | 1.79mJ (on), 670μJ (off) | 62ns | |||||||||||||||||||||||||||||
| RGTV00TK65GVC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgtv00tk65gvc11-datasheets-6085.pdf | TO-3PFM, SC-93-3 | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 94W | 650V | 45A | 400V, 50A, 10 Ω, 15V | 1.9V @ 15V, 50A | Trench Field Stop | 104nC | 200A | 41ns/142ns | 1.17mJ (on), 940μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTH00TK65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-rgth00tk65gc11-datasheets-6088.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | POWER CONTROL | N-CHANNEL | 72W | 102 ns | 650V | 35A | 221 ns | 400V, 50A, 10 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 94nC | 200A | 39ns/143ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| FGH30T65UPDT-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgh30t65updtf155-datasheets-6090.pdf | TO-247-3 | 3 | 4 Weeks | 6.39g | 3 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | not_compliant | e3 | TIN | 250W | 260 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | TO-247AB | 43 ns | 650V | 2.1V | 52 ns | 650V | 60A | 170 ns | 400V, 30A, 8 Ω, 15V | 20V | 7.5V | 2.3V @ 15V, 30A | Trench Field Stop | 155nC | 90A | 22ns/139ns | 760μJ (on), 400μJ (off) | |||||||||||||||||||||||||||||||||
| FGH40N65UFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | 3 | 12 Weeks | 6.39g | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | 290W | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | TO-247AB | 45 ns | 650V | 650V | 69 ns | 650V | 80A | 160 ns | 400V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 40A | Field Stop | 120nC | 120A | 24ns/112ns | 1.19mJ (on), 460μJ (off) | 60ns | |||||||||||||||||||||||||||||||
| NGTB40N135IHRWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/onsemiconductor-ngtb40n135ihrwg-datasheets-6098.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 4 Weeks | 6.500007g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 394W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 394W | 1.35kV | 2.4V | 1.35kV | 80A | 1350V | 600V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.7V @ 15V, 40A | Trench Field Stop | 234nC | 120A | -/250ns | 1.3mJ (off) | ||||||||||||||||||||||||||||||||||
| STGWA60H65DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw60h65dfb-datasheets-4596.pdf | TO-247-3 | 20 Weeks | 3 | EAR99 | 375W | NOT SPECIFIED | STGWA60 | Single | NOT SPECIFIED | 375W | 60 ns | 650V | 2V | 80A | 400V, 60A, 10 Ω, 15V | 2V @ 15V, 60A | Trench Field Stop | 306nC | 240A | 66ns/210ns | 1.59mJ (on), 900μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTH80TK65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgth80tk65dgc11-datasheets-6025.pdf | TO-3PFM, SC-93-3 | 3 | 17 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 66W | 58ns | 84 ns | 650V | 31A | 194 ns | 400V, 40A, 10 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 79nC | 160A | 34ns/120ns | |||||||||||||||||||||||||||||||||||||||||||||||
| STGWT60H65DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw60h65dfb-datasheets-4596.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 32 Weeks | 6.756003g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 375W | STGWT60 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 375W | 60 ns | 650V | 1.6V | 650V | 80A | 400V, 60A, 5 Ω, 15V | 20V | 2V @ 15V, 60A | Trench Field Stop | 306nC | 240A | 51ns/160ns | 1.09mJ (on), 626μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| FGH25T120SMD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-fgh25t120smdf155-datasheets-6032.pdf | TO-247-3 | 3 | 5 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | No | e3 | TIN | 428W | 260 | Single | 428W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AB | 60ns | 1.2kV | 1.9V | 88 ns | 1.2kV | 50A | 1200V | 584 ns | 600V, 25A, 23 Ω, 15V | 25V | 7.5V | 2.4V @ 15V, 25A | Trench Field Stop | 225nC | 100A | 40ns/490ns | 1.74mJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||
| FGA30S120P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga30s120p-datasheets-5946.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 3 | 15 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 348W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 348W | 1.3kV | 2.3V | 1.3kV | 60A | 490ns | 1300V | 25V | 7.5V | 2.3V @ 15V, 30A | Trench Field Stop | 78nC | 150A | |||||||||||||||||||||||||||||||||||
| IKB20N60TATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikb20n60tatma1-datasheets-5811.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | No SVHC | 3 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 166W | GULL WING | 4 | Single | 1 | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 166W | 41 ns | 600V | 36 ns | 600V | 40A | 299 ns | 400V, 20A, 12 Ω, 15V | 2.05V @ 15V, 20A | Trench Field Stop | 120nC | 60A | 18ns/199ns | 770μJ | ||||||||||||||||||||||||||||||||||
| STGWT40H65DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40h65dfb-datasheets-5778.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 32 Weeks | 6.756003g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 283W | STGWT40 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 283W | 62 ns | 650V | 1.6V | 650V | 80A | 400V, 40A, 5 Ω, 15V | 20V | 2V @ 15V, 40A | Trench Field Stop | 210nC | 160A | 40ns/142ns | 498μJ (on), 363μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IKFW50N60DH3EXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/infineontechnologies-ikfw50n60dh3exksa1-datasheets-5967.pdf | TO-247-3 | 16 Weeks | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 130W | 64ns | 600V | 40A | 400V, 40A, 8 Ω, 15V | 2.7V @ 15V, 40A | Trench Field Stop | 160nC | 120A | 21ns/174ns | 1.28mJ (on), 560μJ (off) |
