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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Breakdown Voltage | Power - Output | Current Rating (Amps) | JEDEC-95 Code | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
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| MRF6V2010NBR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 220MHz | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf6v2010nbr1-datasheets-1565.pdf | TO-272BC | MRF6V2010 | 23.9dB | 10W | 30mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V2300NBR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 220MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf6v2300nbr1-datasheets-1558.pdf | TO-272BB | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | MRF6V2300 | 225°C | 40 | 1 | FET General Purpose Power | 25.5dB | Not Qualified | R-PDFM-F4 | SILICON | SINGLE | SOURCE | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 300W | TO-270AA | 900mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||
| PD54003S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd54003e-datasheets-8996.pdf | 4A | PowerSO-10 Exposed Bottom Pad | 2 | 4 | EAR99 | HIGH RELIABILITY | 52.8W | DUAL | FLAT | NOT SPECIFIED | PD54003 | 10 | Single | NOT SPECIFIED | 52.8W | 1 | FET General Purpose Power | 12dB | Not Qualified | R-PDSO-F2 | 4A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 3W | 50mA | 4A | 25V | LDMOS | 7.5V | |||||||||||||||||||||||||||||||
| BF256C_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | BF256 | 18mA | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G20LS-75,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.93GHz~1.99GHz | Non-RoHS Compliant | 2009 | /files/ampleonusainc-blf6g2075112-datasheets-6812.pdf | SOT-502B | BLF6G20 | 19dB | SOT502B | 29.5W | 18A | 550mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G20-110,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.93GHz~1.99GHz | Non-RoHS Compliant | 2008 | /files/ampleonusainc-blf6g20ls110112-datasheets-7115.pdf | SOT-502A | BLF6G20 | 19dB | LDMOST | 25W | 29A | 900mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF245B_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | /files/onsemiconductor-bf245bd27z-datasheets-2494.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | BF245 | TO-92-3 | 15mA | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G10LS-135R,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 871.5MHz~891.5MHz | Non-RoHS Compliant | 2010 | /files/ampleon-blf6g10ls135r112-datasheets-7693.pdf | SOT-502B | BLF6G10 | 21dB | SOT502B | 26.5W | 32A | 950mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD57030 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 3 (168 Hours) | 150°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57030s-datasheets-3011.pdf | 4A | PowerSO-10 Exposed Bottom Pad | 2 | 3 | no | EAR99 | HIGH RELIABILITY | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | 52.8W | DUAL | GULL WING | NOT SPECIFIED | PD57030 | 2 | Single | NOT SPECIFIED | 52.8W | 1 | FET General Purpose Power | 14dB | Not Qualified | R-PDSO-G2 | 4A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 50mA | 4A | 65V | LDMOS | 28V | |||||||||||||||||||||||||||
| BLF6G10LS-200R,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | Non-RoHS Compliant | 2009 | /files/ampleonusainc-blf6g10ls200r112-datasheets-3115.pdf | SOT-502B | BLF6G10 | SOT502B | 40W | 49A | 1.4A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MPF102_D74Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | 25V | RoHS Compliant | /files/onsemiconductor-mpf102d74z-datasheets-3117.pdf | 20mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | 200.998119mg | 3 | 350mW | MPF102 | Single | 350mW | TO-92-3 | 20mA | -25V | 20mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||
| BF 1005SR E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | DUAL GATE, ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-bf1005se6433xt-datasheets-2834.pdf | SOT-143R | 26 Weeks | EAR99 | YES | BF1005 | 150°C | FET General Purpose Power | 22dB | 1.6dB | Single | 0.2W | METAL-OXIDE SEMICONDUCTOR | 25mA | 0.025A | N-Channel | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||
| MPF102_D27Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 25V | RoHS Compliant | /files/onsemiconductor-mpf102d74z-datasheets-3117.pdf | 20mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | 200.998119mg | No SVHC | 3 | 350mW | MPF102 | Single | 350mW | TO-92-3 | 20mA | -25V | -25V | 20mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G20-45,135 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.8GHz~1.88GHz | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf6g2045135-datasheets-3089.pdf | SOT-608A | BLF6G20 | 19.2dB | CDFM2 | 2.5W | 13A | 360mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G10LS-135R,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 871.5MHz~891.5MHz | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf6g10ls135rn11-datasheets-6515.pdf | SOT-502B | BLF6G10 | 21dB | SOT502B | 26.5W | 32A | 950mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF245C_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | /files/onsemiconductor-bf245bd27z-datasheets-2494.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | BF245 | TO-92-3 | 25mA | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G10LS-200R,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | Non-RoHS Compliant | 2008 | /files/ampleonusainc-blf6g10ls200r112-datasheets-3115.pdf | SOT-502B | BLF6G10 | SOT502B | 40W | 49A | 1.4A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF244B_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | 100MHz | /files/onsemiconductor-bf244c-datasheets-2504.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | BF244 | TO-92-3 | 1.5dB | 50mA | N-Channel JFET | 15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF2040RE6814HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 8V | 800MHz | DUAL GATE, DEPLETION MODE | RoHS Compliant | 2007 | /files/infineontechnologies-bf2040we6814htsa1-datasheets-2841.pdf | 40mA | SOT-143R | 4 | 4 | EAR99 | LOW NOISE | 200mW | DUAL | GULL WING | BF2040 | 1 | 23dB | 1.6dB | 40mA | 7V | SINGLE | SOURCE | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | 15mA | N-Channel | 5V | ||||||||||||||||||||||||||||||||||||||||
| BF244C_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | 100MHz | /files/onsemiconductor-bf244c-datasheets-2504.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | BF244 | TO-92-3 | 1.5dB | 50mA | N-Channel JFET | 15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFG35010ANR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 15V | 3.55GHz | ROHS3 Compliant | 2011 | NI-360HF | MRFG35010 | 10dB | 1W | 130mA | pHEMT FET | 12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF256B_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | BF256 | 13mA | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STAC2942B | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 150°C | -65°C | 175MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stac2942b-datasheets-3134.pdf | 40A | STAC244F | 34.04mm | 5.33mm | 9.78mm | 4 | No SVHC | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 625W | FLAT | NOT SPECIFIED | STAC294 | 4 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 21 dB | Not Qualified | 40A | 20V | SOURCE | 130V | METAL-OXIDE SEMICONDUCTOR | 450W | 250mA | N-Channel | 50V | ||||||||||||||||||||||||||||||||||
| BF998RE6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 45MHz | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bf998re6327htsa1-datasheets-3101.pdf | 30mA | SOT-143R | 4 | EAR99 | 200mW | BF998 | 1 | 28dB | 2.8dB | 30mA | 12V | 10mA | N-Channel | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G22LS-75,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | 2010 | /files/ampleonusainc-blf6g22ls75118-datasheets-3135.pdf | SOT-502B | BLF6G22 | 18.7dB | 17W | 18A | 690mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF244A_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | 100MHz | /files/onsemiconductor-bf244c-datasheets-2504.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | BF244 | 1.5dB | 50mA | N-Channel JFET | 15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G22LS-100,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf6g22ls100112-datasheets-3137.pdf | SOT-502B | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G22 | NOT SPECIFIED | 1 | 18.2dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 29A | 950mA | 29A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||
| 2N5246_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | /files/onsemiconductor-2n5246-datasheets-2548.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 2N5246 | TO-92-3 | 7mA | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD84010-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd84010se-datasheets-6908.pdf | 8A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 3 | OBSOLETE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 95W | DUAL | GULL WING | 250 | PD84010 | 10 | Single | 30 | 95W | 1 | FET General Purpose Power | 16.3dB | R-PDSO-G2 | 8A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 10W | 2W | 300mA | 8A | 40V | LDMOS | 7.5V | ||||||||||||||||||||||||||||
| 2N5245_J35Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 30V | /files/onsemiconductor-2n5245-datasheets-2476.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 2N5245 | TO-92-3 | 15mA | N-Channel JFET |
