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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Transistor Type | Nominal Vgs | Voltage - Test |
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| BLF6G20-180PN,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.8GHz~1.88GHz | 2009 | /files/ampleonusainc-blf6g20180pn112-datasheets-3223.pdf | SOT539A | BLF6G20 | 18dB | SOT539A | 50W | 1.6A | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF999E6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 20V | 45MHz | RoHS Compliant | 2007 | /files/infineontechnologies-bf999e6327htsa1-datasheets-9051.pdf | 30mA | TO-236-3, SC-59, SOT-23-3 | 3 | 300MHz | 200mW | 1 | 27dB | SOT-23-3 | 2.1dB | 30mA | 12V | 30mA | 10mA | N-Channel | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G22LS-180RN,11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | 2008 | /files/ampleonusainc-blf6g22180rn112-datasheets-3208.pdf | SOT-502B | BLF6G22 | 16dB | 40W | 49A | 1.4A | LDMOS | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G10LS-160RN:11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 922.5MHz~957.5MHz | 2009 | /files/ampleonusainc-blf6g10160rn112-datasheets-6564.pdf | SOT-502B | BLF6G10 | 22.5dB | 32W | 39A | 1.2A | LDMOS | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBFJ304 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | /files/onsemiconductor-mmbfj304-datasheets-3231.pdf | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 15mA | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STAC2932B | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -65°C | 175MHz | ENHANCEMENT MODE | ROHS3 Compliant | 40A | STAC244B | 4 | No SVHC | 5 | EAR99 | No | 625W | DUAL | FLAT | STAC293 | 4 | 1 | FET General Purpose Power | R-CDFM-F4 | 40A | 20V | SINGLE | SOURCE | 125V | METAL-OXIDE SEMICONDUCTOR | 300W | 390W | 250mA | N-Channel | 50V | |||||||||||||||||||||||||||||||||||||||||
| PTF140451F V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 1.5GHz | ROHS3 Compliant | 2010 | 2-Flatpack, Fin Leads, Flanged | 18dB | 45W | 1μA | 550mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BG3123E6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 8V | 800MHz | RoHS Compliant | 2007 | /files/infineontechnologies-bg3123e6327htsa1-datasheets-3287.pdf | 20mA | 6-VSSOP, SC-88, SOT-363 | 6 | 200mW | BG3123 | 2 | 25dB | PG-SOT363-6 | 1.8dB | 25mA | 25mA 20mA | 14mA | 2 N-Channel (Dual) | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PN4416_D27Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | 400MHz | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 4dB | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFA041501HL V1 R250 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 470MHz | 2008 | /files/infineontechnologies-ptfa041501glv1r250-datasheets-3255.pdf | 2-Flatpack, Fin Leads, Flanged | PTFA041501 | 21dB | PG-64248-2 | 150W | 1μA | 900mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTF141501E V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 1.5GHz | 2008 | /files/infineontechnologies-ptf141501ev1-datasheets-3235.pdf | 2-Flatpack, Fin Leads | 16.5dB | H-30260-2 | 150W | 1μA | 1.5A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFA041501GL V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 470MHz | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ptfa041501glv1r250-datasheets-3255.pdf | 2-Flatpack, Fin Leads | 2 | EAR99 | HIGH RELIABILITY | unknown | YES | DUAL | NOT SPECIFIED | PTFA041501 | 2 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | 21dB | R-PDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 150W | 1μA | 900mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||
| PTF210451E V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 2.17GHz | 2008 | /files/infineontechnologies-ptf210451ev1-datasheets-3239.pdf | 2-Flatpack, Fin Leads | 14dB | H-30265-2 | 45W | 1μA | 500mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTF140451E V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tray | 3 (168 Hours) | 65V | 1.5GHz | ROHS3 Compliant | 2010 | 2-Flatpack, Fin Leads | 18dB | 45W | 1μA | 550mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE3510M04-A | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | 4GHz | RoHS Compliant | SOT-343F | Lead Free | 4 | No | NE3510 | 16dB | 0.45dB | 97mA | -3V | 11dBm | 4V | 15mA | HFET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6VP41KHR7 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 110V | 450MHz | ROHS3 Compliant | 2012 | /files/nxpusainc-mrf6vp41khr7-datasheets-3184.pdf | NI-1230 | MRF6VP41 | 20dB | 1000W | 150mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V2010NBR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 220MHz | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf6v2010nbr1-datasheets-1565.pdf | TO-272BC | MRF6V2010 | 23.9dB | 10W | 30mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V2300NBR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 110V | 220MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf6v2300nbr1-datasheets-1558.pdf | TO-272BB | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | MRF6V2300 | 225°C | 40 | 1 | FET General Purpose Power | 25.5dB | Not Qualified | R-PDFM-F4 | SILICON | SINGLE | SOURCE | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 300W | TO-270AA | 900mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||
| PD54003S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd54003e-datasheets-8996.pdf | 4A | PowerSO-10 Exposed Bottom Pad | 2 | 4 | EAR99 | HIGH RELIABILITY | 52.8W | DUAL | FLAT | NOT SPECIFIED | PD54003 | 10 | Single | NOT SPECIFIED | 52.8W | 1 | FET General Purpose Power | 12dB | Not Qualified | R-PDSO-F2 | 4A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 3W | 50mA | 4A | 25V | LDMOS | 7.5V | |||||||||||||||||||||||||||||||||
| BF 5020R E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 8V | 800MHz | DEPLETION MODE | RoHS Compliant | 2009 | SOT-143R | EAR99 | YES | BF5020 | 150°C | FET General Purpose Power | 26dB | 1.2dB | Single | 0.2W | METAL-OXIDE SEMICONDUCTOR | 25mA | 10mA | 0.025A | N-Channel | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-35143-TR1G | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 160°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2005 | 5.5V | 80mA | SC-82A, SOT-343 | Lead Free | 4 | 6 Weeks | No SVHC | 4 | EAR99 | Tin | No | e3 | 300mW | DUAL | GULL WING | 260 | ATF-35143 | 300mW | 1 | FET RF Small Signals | 18dB | 0.4dB | 80mA | -5V | 5.5V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 5.5V | HIGH ELECTRON MOBILITY | 10dBm | 15mA | pHEMT FET | -5 V | 2V | |||||||||||||||||||||||||||||
| BLF6G22-180RN,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | 2008 | /files/ampleonusainc-blf6g22180rn112-datasheets-3208.pdf | SOT-502A | BLF6G22 | 16dB | LDMOST | 40W | 49A | 1.4A | LDMOS | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G10-200RN,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 871.5MHz~891.5MHz | Non-RoHS Compliant | 2009 | /files/ampleonusainc-blf6g10200rn112-datasheets-3153.pdf | SOT-502A | BLF6G10 | 20dB | LDMOST | 40W | 49A | 1.4A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G22LS-100,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf6g22ls100112-datasheets-3137.pdf | SOT-502B | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G22 | NOT SPECIFIED | 1 | 18.2dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 29A | 950mA | 29A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||
| PD57060STR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57060tre-datasheets-9123.pdf | 7A | PowerSO-10 Exposed Bottom Pad | 2 | 4 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | 79W | DUAL | FLAT | 250 | PD57060 | 10 | Single | NOT SPECIFIED | 79W | 1 | FET General Purpose Power | 14.3dB | Not Qualified | R-PDSO-F2 | 7A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 60W | 100mA | 7A | 65V | LDMOS | 28V | ||||||||||||||||||||||||||||||
| BLF6G27LS-135,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | 2008 | SOT-502B | BLF6G27 | 16dB | 20W | 34A | 1.2A | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G10LS-160,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 2014 | SOT-502B | BLF6G10 | SOT502B | LDMOS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTF180101S V1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GOLDMOS® | Tape & Reel (TR) | 3 (168 Hours) | 65V | 1.99GHz | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-ptf180101sv1-datasheets-3159.pdf | H32259-2 | 2 | EAR99 | HIGH RELIABILITY | compliant | YES | DUAL | GULL WING | NOT SPECIFIED | 200°C | NOT SPECIFIED | 1 | 19dB | S-XDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 10W | 1μA | 180mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||
| PD20010S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 2GHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd20010tre-datasheets-7729.pdf | 5A | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) | 2 | 3 | EAR99 | ESD PROTECTION, HIGH RELIABILITY | 59W | DUAL | FLAT | NOT SPECIFIED | PD20010 | 10 | Single | NOT SPECIFIED | 59W | 1 | FET General Purpose Power | 11dB | Not Qualified | R-PDFP-F2 | 5A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 15W | 10W | 150mA | 5A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||
| BLF6G10-135RN,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 871.5MHz~891.5MHz | 2012 | /files/ampleonusainc-blf6g10ls135rn11-datasheets-6515.pdf | SOT-502A | BLF6G10 | 21dB | 26.5W | 32A | 950mA | LDMOS | 28V |
