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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI1024X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1024xt1ge3-datasheets-3402.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 8.193012mg | No SVHC | 700mOhm | 6 | No | 250mW | SI1024 | 2 | Dual | 250mW | 2 | SC-89-6 | 600mA | 6V | 20V | 20V | 900mV | 250mW | 1.25Ohm | 20V | 2 N-Channel (Dual) | 900 mV | 700mOhm @ 600mA, 4.5V | 900mV @ 250μA | 485mA | 0.75nC @ 4.5V | Logic Level Gate | 700 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| SI1016X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016xt1ge3-datasheets-1326.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 32.006612mg | No SVHC | 1.2Ohm | 6 | 250mW | SI1016 | 2 | 250mW | 2 | SC-89-6 | 600mA | 6V | 20V | 20V | 800mV | 250mW | 1.2Ohm | 20V | N and P-Channel | 800 mV | 700mOhm @ 600mA, 4.5V | 1V @ 250μA | 485mA 370mA | 0.75nC @ 4.5V | Logic Level Gate | 700 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| VWM200-01P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-vwm20001p-datasheets-4278.pdf | V2-PAK | 24 | 17 | EAR99 | UPPER | UNSPECIFIED | 24 | 6 | Not Qualified | R-XUFM-X24 | 210A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.0052Ohm | 6 N-Channel (3-Phase Bridge) | 5.2m Ω @ 100A, 10V | 4V @ 2mA | 430nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VWM350-0075P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-vwm3500075p-datasheets-4282.pdf | V2-PAK | 24 | EAR99 | e3 | Matte Tin (Sn) | UPPER | UNSPECIFIED | 260 | 35 | 6 | Not Qualified | R-XUFM-X24 | 340A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 0.0033Ohm | 6 N-Channel (3-Phase Bridge) | 3.3m Ω @ 250A, 10V | 4V @ 2mA | 450nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMM1500-0075P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-vmm15000075p-datasheets-9231.pdf | Y3-Li | Lead Free | 7 | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMM | 7 | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X7 | 1.5kA | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 1500A | 0.0008Ohm | 2 N-Channel (Dual) | 0.8m Ω @ 1200A, 10V | 4V @ 10mA | 1500A | 2480nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMJ1028N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2001 | /files/onsemiconductor-fdmj1028n-datasheets-4221.pdf | 20V | 3.2A | 6-WFDFN Exposed Pad | Lead Free | 8 | 800mW | Dual | 1.4W | 2 | 6-MicroFET (2x2) | 200pF | 3.2A | 12V | 20V | 800mW | 76mOhm | 20V | 2 N-Channel (Dual) | 200pF @ 10V | 90mOhm @ 3.2A, 4.5V | 1.5V @ 250μA | 3.2A | 3nC @ 4.5V | Logic Level Gate | 90 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3A06N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/diodesinc-zxmn3a06n8ta-datasheets-9202.pdf | 30V | 6.2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 73.992255mg | 8 | 1.25W | 2 | 1.25W | 8-SOP | 6.2A | 20V | 30V | 35mOhm | 30V | 2 N-Channel (Dual) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD4502NT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/onsemiconductor-nthd4502nt1g-datasheets-6759.pdf | 30V | 3.9A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 640mW | C BEND | 240 | NTHD4502N | 8 | 30 | 1.13W | 2 | FET General Purpose Power | Not Qualified | 5.4ns | 5.4 ns | 14.6 ns | 2.2A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.9A | 25 pF | -20V | 2 N-Channel (Dual) | 140pF @ 15V | 85m Ω @ 2.9A, 10V | 3V @ 250μA | 7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| NTJD2152PT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntjd2152pt1-datasheets-0332.pdf | -8V | -775mA | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | EAR99 | e3 | Tin (Sn) | 270mW | GULL WING | 260 | NTJD2152P | 6 | Dual | NOT SPECIFIED | 270mW | 2 | Other Transistors | Not Qualified | R-PDSO-G6 | 23ns | 23 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.775A | 0.3Ohm | 40 pF | -8V | 2 P-Channel (Dual) | 225pF @ 8V | 300m Ω @ 570mA, 4.5V | 1V @ 250μA | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| NTJD4401NT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntjd4401nt1g-datasheets-3295.pdf | 20V | 775mA | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | unknown | e3 | Tin (Sn) | YES | 270mW | GULL WING | 260 | NTJD4401N | 6 | Dual | 40 | 270mW | 2 | FET General Purpose Power | Not Qualified | 227ns | 227 ns | 786 ns | 630mA | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.375Ohm | 5 pF | 20V | 2 N-Channel (Dual) | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NTJD2152PT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntjd2152pt1-datasheets-0332.pdf | -8V | -775mA | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 270mW | GULL WING | 235 | NTJD2152P | 6 | Dual | NOT SPECIFIED | 270mW | 2 | Other Transistors | Not Qualified | R-PDSO-G6 | 23ns | 23 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.775A | 0.3Ohm | 40 pF | -8V | 2 P-Channel (Dual) | 225pF @ 8V | 300m Ω @ 570mA, 4.5V | 1V @ 250μA | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| MMDF2P02ER2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mmdf2p02er2g-datasheets-4229.pdf | -25V | -2.5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 3 days ago) | yes | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | 2W | GULL WING | 260 | 8 | 40 | 2W | 2 | Other Transistors | Not Qualified | 29ns | 28 ns | 30 ns | 2.5A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 13A | 0.25Ohm | 245 mJ | -25V | 2 P-Channel (Dual) | 475pF @ 16V | 250m Ω @ 2A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NTQD6968N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntqd6968nr2-datasheets-0491.pdf | 20V | 7A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | 1.39W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.81W | 2 | Not Qualified | 25ns | 25 ns | 60 ns | 6.2A | 12V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.03Ohm | 20V | 2 N-Channel (Dual) | 630pF @ 16V | 22m Ω @ 7A, 4.5V | 1.2V @ 250μA | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| NTJD4401NT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | /files/onsemiconductor-ntjd4401nt1g-datasheets-3295.pdf | 20V | 775mA | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | 88 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | 270mW | GULL WING | 235 | NTJD4401N | 6 | Dual | NOT SPECIFIED | 270mW | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | 227ns | 227 ns | 786 ns | 630mA | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.63A | 0.375Ohm | 5 pF | 20V | 2 N-Channel (Dual) | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| NTMD2C02R2SG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntmd2c02r2-datasheets-0369.pdf | 20V | 5.2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | 2W | DUAL | GULL WING | 260 | 8 | 40 | 2W | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | 40ns | 35 ns | 35 ns | 3.4A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 48A | 0.043Ohm | 20V | N and P-Channel | 1100pF @ 10V | 43m Ω @ 4A, 4.5V | 1.2V @ 250μA | 5.2A 3.4A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NTJD4152PT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | /files/onsemiconductor-ntjd4152pt1g-datasheets-3403.pdf | -20V | -880mA | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | 6 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 272mW | GULL WING | 240 | NTJD4152P | 6 | Dual | 30 | 272mW | 2 | Other Transistors | Not Qualified | 6.5ns | 6.5 ns | 13.5 ns | 880mA | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.88A | -20V | 2 P-Channel (Dual) | 155pF @ 20V | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 2.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IXTL2X240N055T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/ixys-ixtl2x240n055t-datasheets-9223.pdf | ISOPLUSi5-Pak™ | 5 | 5 | yes | EAR99 | AVALANCHE RATED | 150W | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 150W | 2 | Not Qualified | 54ns | 75 ns | 63 ns | 140A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 55V | METAL-OXIDE SEMICONDUCTOR | 0.0044Ohm | 1000 mJ | 55V | 2 N-Channel (Dual) | 7600pF @ 25V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 170nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76413DK8T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-hufa76413dk8t-datasheets-4248.pdf | 60V | 4.8A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 230.4mg | 8 | EAR99 | ULTRA-LOW RESISTANCE | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5W | GULL WING | 260 | 30 | 2.5W | 2 | Not Qualified | 19ns | 27 ns | 45 ns | 5.1A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 60V | 2 N-Channel (Dual) | 620pF @ 25V | 49m Ω @ 5.1A, 10V | 3V @ 250μA | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| GWM160-0055P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/ixys-gwm1600055p3-datasheets-9228.pdf | ISOPLUS-DIL™ | Lead Free | 17 | 2MOhm | yes | EAR99 | DUAL | FLAT | NOT SPECIFIED | GWM160 | NOT SPECIFIED | 6 | Not Qualified | R-PDFP-F17 | 160A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 6 N-Channel (3-Phase Bridge) | 3m Ω @ 100A, 10V | 4V @ 1mA | 90nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD4401PT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/onsemiconductor-nthd4401pt1-datasheets-0361.pdf | 20V | -3A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | yes | EAR99 | e3 | Tin (Sn) | 1.1W | C BEND | NTHD4401P | 8 | 1.1W | 2 | 13ns | 13 ns | 33 ns | 2.1A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.155Ohm | 50 pF | -20V | 2 P-Channel (Dual) | 300pF @ 10V | 155m Ω @ 2.1A, 4.5V | 1.2V @ 250μA | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SSD2025TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-ssd2025tf-datasheets-4220.pdf | 60V | 3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 48 Weeks | 8 | 2W | 2W | 2 | 18ns | 23 ns | 40 ns | 3.3A | 20V | 60V | 2 N-Channel (Dual) | 100m Ω @ 3.3A, 10V | 1V @ 250μA | 30nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTJD1155LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ntjd1155lt1g-datasheets-3487.pdf | -8V | -1.3A | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | 6 | OBSOLETE (Last Updated: 2 weeks ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | 400mW | GULL WING | 240 | NTJD1155 | 6 | Dual | 30 | 400mW | 2 | Other Transistors | Not Qualified | 1.3A | 1V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 8V | METAL-OXIDE SEMICONDUCTOR | 0.175Ohm | -8V | N and P-Channel | 175m Ω @ 1.2A, 4.5V | 1V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| NDH8304P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-ndh8304p-datasheets-4183.pdf | 8-LSOP (0.130, 3.30mm Width) | SuperSOT™-8 | 20V | 800mW | 2 P-Channel (Dual) | 865pF @ 10V | 70mOhm @ 2.7A, 4.5V | 1V @ 250μA | 2.7A | 23nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTJD4105CT2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntjd4105ct2g-datasheets-6244.pdf | 630mA | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | 6 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | 270mW | GULL WING | 240 | NTJD4105C | 6 | Dual | 30 | 270mW | 2 | Other Transistors | Not Qualified | 23ns | 36 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V 8V | METAL-OXIDE SEMICONDUCTOR | 1.1A | 0.375Ohm | 5 pF | -8V | N and P-Channel | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA 775mA | 3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| BSO200N03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bso200n03-datasheets-4187.pdf | 30V | 6.6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | AVALANCHE RATED | Tin | e3 | 1.4W | GULL WING | 260 | 8 | 40 | 1.56W | 2 | FET General Purpose Power | Not Qualified | 2.9 ns | 2.6ns | 2.6 ns | 12 ns | 7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | MS-012 | 0.02Ohm | 56 pF | 30V | 2 N-Channel (Dual) | 1010pF @ 15V | 20m Ω @ 7.9A, 10V | 2V @ 13μA | 8nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NTJD4105CT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntjd4105ct2g-datasheets-6244.pdf | 630mA | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | 6 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | 270mW | GULL WING | 235 | NTJD4105C | 6 | Dual | NOT SPECIFIED | 270mW | 2 | Other Transistors | Not Qualified | 23ns | 36 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V 8V | METAL-OXIDE SEMICONDUCTOR | 1.1A | 0.375Ohm | 5 pF | -8V | N and P-Channel | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA 775mA | 3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTJD4105CT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntjd4105ct2g-datasheets-6244.pdf | 630mA | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 6 | EAR99 | unknown | 8541.21.00.95 | e3 | Tin (Sn) | YES | 270mW | GULL WING | 260 | NTJD4105C | 6 | Dual | 40 | 270mW | 2 | Other Transistors | Not Qualified | 23ns | 36 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V 8V | METAL-OXIDE SEMICONDUCTOR | 1.1A | 0.375Ohm | 5 pF | -8V | N and P-Channel | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA 775mA | 3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTHD3100CT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-nthd3100ct1g-datasheets-5869.pdf | 20V | 3.9A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | 1.1W | C BEND | NOT SPECIFIED | NTHD3100C | 8 | Dual | NOT SPECIFIED | 1.1W | 2 | Other Transistors | Not Qualified | 11.7ns | 11.7 ns | 16 ns | 3.2A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.9A | 12A | -20V | N and P-Channel | 165pF @ 10V | 80m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 2.9A 3.2A | 2.3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| FDS8926A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | RoHS Compliant | 1998 | /files/onsemiconductor-fds8926a-datasheets-4200.pdf | 30V | 5.5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 230.4mg | No SVHC | 8 | No | 900mW | Dual | 2W | 2 | 19ns | 13 ns | 42 ns | 5.5A | 8V | 30V | 30V | 2 N-Channel (Dual) | 900pF @ 10V | 670 mV | 30m Ω @ 5.5A, 4.5V | 1V @ 250μA | 28nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO150N03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-bso150n03-datasheets-4159.pdf | 30V | 9.1A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 1.4W | GULL WING | 260 | BSO150N03 | 8 | 40 | 1.4W | 2 | FET General Purpose Power | Not Qualified | 4ns | 4 ns | 21 ns | 7.6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 0.015Ohm | 100 pF | 30V | 2 N-Channel (Dual) | 1890pF @ 15V | 15m Ω @ 9.1A, 10V | 2V @ 25μA | 15nC @ 5V | Standard |
