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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Terminal Finish | Polarity | Max Power Dissipation | Terminal Position | Terminal Form | Base Part Number | Pin Count | Element Configuration | Number of Elements | Subcategory | Input Capacitance | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXGN200N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2000 | /files/ixys-ixgn200n60a-datasheets-2113.pdf | SOT-227-4, miniBLOC | 4 | 38.000013g | 4 | yes | FAST, UL RECOGNIZED | Nickel (Ni) | 600W | UPPER | UNSPECIFIED | IXG*200N60 | 4 | 1 | Insulated Gate BIP Transistors | 9nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 600W | 600V | 100 ns | 600V | 200A | Standard | 800 ns | 20V | 6V | 200μA | 2.5V @ 15V, 100A | No | 9nF @ 25V | 500ns | ||||||||||||||||||
| VS-GT100TP120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgt100tp120n-datasheets-2415.pdf | INT-A-PAK (3 + 4) | yes | EAR99 | NICKEL (197) | 652W | 12.8nF | Half Bridge | 652W | 1.2kV | 2.35V | 180A | Standard | 1200V | 5mA | 2.35V @ 15V, 100A | Trench | No | 12.8nF @ 30V | |||||||||||||||||||||||||||||||||||
| APTGF30TL601G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf30tl601g-datasheets-2418.pdf | SP1 | 12 | EAR99 | 140W | 1 | Insulated Gate BIP Transistors | 1.35nF | Three Level Inverter | 600V | 600V | 42A | Standard | 2.45 V | 20V | 250μA | 2.45V @ 15V, 30A | NPT | No | 1.35nF @ 25V | |||||||||||||||||||||||||||||||||
| VS-GT75NP120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgt75np120n-datasheets-2421.pdf | INT-A-PAK (3 + 4) | yes | EAR99 | NICKEL (197) | 446W | 9.45nF | Single | 446W | 1.2kV | 2.08V | 150A | Standard | 1200V | 1mA | 2.08V @ 15V, 75A (Typ) | No | 9.45nF @ 30V | ||||||||||||||||||||||||||||||||||||
| VS-GB300TH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb300th120n-datasheets-2424.pdf | Double INT-A-PAK (3 + 4) | 14 Weeks | 7 | yes | EAR99 | Nickel (Ni) | 1.645kW | Dual | 1 | Insulated Gate BIP Transistors | 21.2nF | Half Bridge | 1645W | 1.2kV | 2.45V | 500A | Standard | 1200V | 20V | 5mA | 2.45V @ 15V, 300A | No | 21.2nF @ 25V | ||||||||||||||||||||||||||||||
| VS-GB400AH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (5) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 2.5kW | 1 | Insulated Gate BIP Transistors | 30nF | Single | 2500W | 1.2kV | 1.9V | 650A | Standard | 1200V | 20V | 5mA | 1.9V @ 15V, 400A (Typ) | No | 30nF @ 25V | |||||||||||||||||||||||||||||||||
| VS-GB75SA120UP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsgb75sa120up-datasheets-2430.pdf | SOT-227-4, miniBLOC | Unknown | 4 | EAR99 | NPN | 658W | Single | 658W | 1.2kV | 3.3V | 3.8V | 250μA | Standard | 1200V | 3.8V @ 15V, 75A | NPT | No | ||||||||||||||||||||||||||||||||||||
| VS-GB70NA60UF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vsgb70na60uf-datasheets-2432.pdf | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | 4 | Unknown | 4 | EAR99 | UL RECOGNIZED, LOW CONDUCTION LOSS | 447W | UPPER | UNSPECIFIED | 4 | 1 | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 447W | 600V | 2.23V | 277 ns | 600V | 111A | Standard | 308 ns | 100μA | 2.44V @ 15V, 70A | NPT | No | ||||||||||||||||||||||
| VS-GB75TP120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb75tp120u-datasheets-2434.pdf | INT-A-PAK (3 + 4) | 12 Weeks | yes | EAR99 | Nickel (Ni) | 500W | 4.3nF | Half Bridge | 500W | 1.2kV | 3.2V | 105A | Standard | 1200V | 2mA | 3.2V @ 15V, 75A (Typ) | No | 4.3nF @ 30V | |||||||||||||||||||||||||||||||||||
| VS-GB75DA120UP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsgb75da120up-datasheets-2438.pdf | SOT-227-4, miniBLOC | Unknown | 4 | EAR99 | NPN | 658W | Single | 658W | 1.2kV | 3.3V | 3.8V | 250μA | Standard | 1200V | 3.8V @ 15V, 75A | NPT | No | ||||||||||||||||||||||||||||||||||||
| VS-GB200LH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.562kW | 1 | Insulated Gate BIP Transistors | 18nF | Single | 1562W | 1.2kV | 2.07V | 370A | Standard | 1200V | 20V | 100nA | 2.07V @ 15V, 200A (Typ) | No | 18nF @ 25V | |||||||||||||||||||||||||||||||||
| VS-GT50TP60N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgt50tp60n-datasheets-2440.pdf | INT-A-PAK (3 + 4) | 12 Weeks | yes | EAR99 | Nickel (Ni) | 208W | 3.03nF | Half Bridge | 208W | 600V | 2.1V | 85A | Standard | 1mA | 2.1V @ 15V, 50A | Trench | No | 3.03nF @ 30V | |||||||||||||||||||||||||||||||||||
| VS-GB100TP120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | INT-A-Pak | 12 Weeks | EAR99 | 650W | 7.43nF | Half Bridge | 650W | 1.2kV | 2.2V | 200A | Standard | 1200V | 5mA | 2.2V @ 15V, 100A | No | 7.43nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| VS-GT100DA120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2000 | /files/vishaysemiconductordiodesdivision-vsgt100da120u-datasheets-2444.pdf | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | Unknown | 4 | EAR99 | 893W | Single | 893W | 1.2kV | 1.73V | 1.2kV | 258A | Standard | 1200V | 100μA | 2.1V @ 15V, 100A | Trench | No | |||||||||||||||||||||||||||||||||
| VS-GB100LP120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | INT-A-Pak | 12 Weeks | EAR99 | 658W | 7.43nF | Single | 658W | 1.2kV | 1.8V | 200A | Standard | 1200V | 1mA | 1.8V @ 15V, 100A (Typ) | No | 7.43nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| VS-GB200TH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.136kW | 1 | Insulated Gate BIP Transistors | 14.9nF | Half Bridge | 1136W | 1.2kV | 2.35V | 360A | Standard | 1200V | 20V | 5mA | 2.35V @ 15V, 200A | No | 14.9nF @ 25V | |||||||||||||||||||||||||||||||||
| VS-GB100TP120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 1 (Unlimited) | ROHS3 Compliant | 2015 | INT-A-Pak | yes | EAR99 | NICKEL (197) | 735W | 4.3nF | Half Bridge | 735W | 1.2kV | 3.9V | 150A | Standard | 1200V | 2mA | 3.9V @ 15V, 100A | No | 4.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| VS-GB200TS60NPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsgb200ts60npbf-datasheets-2368.pdf | INT-A-PAK (3 + 4) | 12 Weeks | Unknown | 3 | EAR99 | NPN | 781W | Dual | Half Bridge | 781W | 600V | 2.6V | 600V | 209A | Standard | 200μA | 2.84V @ 15V, 200A | NPT | No | ||||||||||||||||||||||||||||||||||
| VS-GB100TH120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb100th120u-datasheets-2370.pdf | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.136kW | 1 | Insulated Gate BIP Transistors | 8.45nF | Half Bridge | 1136W | 1.2kV | 3.6V | 200A | Standard | 1200V | 20V | 5mA | 3.6V @ 15V, 100A | NPT | No | 8.45nF @ 20V | |||||||||||||||||||||||||||||||
| VS-GB150TH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.008kW | 1 | Insulated Gate BIP Transistors | 11nF | Half Bridge | 1008W | 1.2kV | 2.35V | 300A | Standard | 1200V | 20V | 5mA | 2.35V @ 15V, 150A | No | 11nF @ 25V | |||||||||||||||||||||||||||||||||
| VS-EMG050J60N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsemg050j60n-datasheets-2377.pdf | EMIPAK2 | 17 | Unknown | 17 | EAR99 | No | NPN | 338W | UPPER | PIN/PEG | 17 | 2 | 9.5nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | 338W | 600V | 2.2V | 227 ns | 2.1V | 88A | Standard | 302 ns | 100μA | 2.1V @ 15V, 50A | Yes | 9.5nF @ 30V | ||||||||||||||||||||||||
| CM75TU-12H | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | IGBTMOD™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | Module | 17 | 17 | 310W | UPPER | UNSPECIFIED | 6 | Insulated Gate BIP Transistors | 6.6nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 310W | 600V | 100 ns | 3V | 75A | Standard | 500 ns | 3 V | 20V | 1mA | 3V @ 15V, 75A | No | 6.6nF @ 10V | ||||||||||||||||||||||||||
| VS-GB100TH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | EAR99 | 833W | 1 | Insulated Gate BIP Transistors | 8.58nF | Half Bridge | 833W | 1.2kV | 2.35V | 200A | Standard | 1200V | 20V | 5mA | 2.35V @ 15V, 100A | No | 8.58nF @ 25V | |||||||||||||||||||||||||||||||||||
| VS-CPV363M4KPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vscpv363m4kpbf-datasheets-2350.pdf | 19-SIP (13 Leads), IMS-2 | 13 | 36W | CPV363M4 | 740pF | 36W | 600V | 600V | 11A | Standard | 250μA | 2.1V @ 15V, 6A | No | 0.74nF @ 30V | |||||||||||||||||||||||||||||||||||||||
| VS-GB100NH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 833W | 1 | Insulated Gate BIP Transistors | 8.58nF | Single | 833W | 1.2kV | 2.35V | 200A | Standard | 1200V | 20V | 5mA | 2.35V @ 15V, 100A | No | 8.58nF @ 25V | |||||||||||||||||||||||||||||||||
| APTGL90DH120T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 22 Weeks | 16 | EAR99 | 385W | Dual | 1 | Insulated Gate BIP Transistors | 4.4nF | Asymmetrical Bridge | 385W | 1.2kV | 1.2kV | 110A | Standard | 1200V | 2.2 V | 20V | 250μA | 2.2V @ 15V, 75A | Trench Field Stop | Yes | 4.4nF @ 25V | |||||||||||||||||||||||||||||||
| CM200EXS-24S | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2013 | /files/powerexinc-cm200exs24s-datasheets-2386.pdf | Module | Unknown | 8 | 1.5kW | 1 | Insulated Gate BIP Transistors | 20nF | Single | 1500W | 1.2kV | 1.2kV | 2.15V | 200A | Standard | 1200V | 20V | 1mA | 2.15V @ 15V, 200A | Yes | 20nF @ 10V | |||||||||||||||||||||||||||||||||||
| VS-GB150TS60NPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | INT-A-PAK (3 + 4) | 12 Weeks | 7 | EAR99 | 500W | Dual | Half Bridge | 500W | 600V | 600V | 138A | Standard | 200μA | 3V @ 15V, 150A | NPT | No | ||||||||||||||||||||||||||||||||||||||
| VS-GB300TH120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb300th120u-datasheets-2388.pdf | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 2.119kW | 1 | Insulated Gate BIP Transistors | 25.3nF | Half Bridge | 2119W | 1.2kV | 3.6V | 530A | Standard | 1200V | 20V | 5mA | 3.6V @ 15V, 300A | No | 25.3nF @ 30V | ||||||||||||||||||||||||||||||||
| APTGT50H60T2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | SP2 | 22 | EAR99 | No | 176W | 3.15nF | Full Bridge Inverter | 600V | 600V | 80A | Standard | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V |
