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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Power - Max | Max Repetitive Reverse Voltage (Vrrm) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
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| BSM100GB170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/infineontechnologies-bsm100gb170dn2hosa1-datasheets-2695.pdf | Module | 1kW | Module | 16nF | Half Bridge | 1000W | 1.7kV | 3.9V | 145A | Standard | 1700V | 145A | 1mA | 3.9V @ 15V, 100A | No | 16nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| FS215R04A1E3DBOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2006 | Contains Lead | 26 Weeks | yes | EAR99 | Not Halogen Free | 400V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ800R33KL2CB5NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | /files/infineontechnologies-fz800r33kl2cb5nosa1-datasheets-2699.pdf | Module | 7 | 9.8kW | UPPER | UNSPECIFIED | 2 | R-XUFM-X7 | 97nF | SILICON | COMPLEX | ISOLATED | POWER CONTROL | N-CHANNEL | 9800W | 3.3kV | 1400 ns | 3.65V | 1.5kA | Standard | 3300V | 1500A | 4250 ns | 5mA | 3.65V @ 15V, 800A | No | 97nF @ 25V | ||||||||||||||||||||||||||||||||||||
| VS-GA200HS60S1 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vsga200hs60s1pbf-datasheets-2354.pdf | INT-A-Pak | 7 | EAR99 | 830W | 32.5nF | Half Bridge | 830W | 600V | 1.21V | 480A | Standard | 1mA | 1.21V @ 15V, 200A | No | 32.5nF @ 30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FS100R12KT4B11BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2012 | /files/infineontechnologies-fs100r12kt4b11bosa1-datasheets-2703.pdf | Module | Contains Lead | Not Halogen Free | Three Phase Inverter | 515W | Standard | 1200V | 100A | 1mA | 2.1V @ 15V, 100A | Trench Field Stop | No | 6.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ30R07W1E3B31ABOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2006 | /files/infineontechnologies-fz30r07w1e3b31aboma1-datasheets-2707.pdf | 14 Weeks | EAR99 | compliant | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FF800R17KE3B2NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2002 | /files/infineontechnologies-ff800r17ke3b2nosa1-datasheets-2710.pdf | Module | Contains Lead | 10 | 130 | EAR99 | Not Halogen Free | UPPER | UNSPECIFIED | NOT SPECIFIED | Dual | NOT SPECIFIED | 2 | R-XUFM-X10 | ISOLATED | POWER CONTROL | N-CHANNEL | 900 ns | 1.7kV | 1.2kA | 1900 ns | ||||||||||||||||||||||||||||||||||||||||||
| BSM35GD120DN2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/infineontechnologies-bsm35gd120dn2-datasheets-2668.pdf | Module | 107.5mm | 17mm | 45.5mm | 17 | 18 Weeks | 17 | EAR99 | 280W | UPPER | UNSPECIFIED | 17 | 280W | 6 | Insulated Gate BIP Transistors | SILICON | Three Phase Inverter | ISOLATED | N-CHANNEL | 1.2kV | 2.7V | 120 ns | 1.2kV | 50A | Standard | 1200V | 450 ns | 3.2 V | 20V | 3.2V @ 15V, 35A | NPT | No | 2nF @ 25V | |||||||||||||||||||||||||||||
| F1235R12KT4GBOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2013 | /files/infineontechnologies-f1235r12kt4gbosa1-datasheets-2715.pdf | Module | 38 | EAR99 | UL RECOGNIZED | compliant | NO | UPPER | UNSPECIFIED | 12 | R-XUFM-X38 | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 210W | 210 ns | Standard | 1200V | 35A | 620 ns | 1mA | 2.15V @ 15V, 35A | Trench Field Stop | No | 2nF @ 25V | |||||||||||||||||||||||||||||||||||||
| FS100R12KE3_B3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/infineontechnologies-fs100r12ke3b3-datasheets-2671.pdf | Module | 34 | 32 | EAR99 | e0 | TIN LEAD | UPPER | UNSPECIFIED | 34 | 6 | Insulated Gate BIP Transistors | R-XUFM-X34 | SILICON | Three Phase Inverter | ISOLATED | N-CHANNEL | 480W | 480W | 340 ns | 1.2kV | 140A | Standard | 1200V | 610 ns | 2.15 V | 20V | 5mA | 2.15V @ 15V, 100A | NPT | No | 7.1nF @ 25V | |||||||||||||||||||||||||||||||
| VS-GB200NH120N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | Double INT-A-PAK (3 + 4) | 14 Weeks | yes | EAR99 | Nickel (Ni) | 1.562kW | 1 | Insulated Gate BIP Transistors | 18nF | Single | 1562W | 1.2kV | 1.8V | 420A | Standard | 1200V | 20V | 5mA | 1.8V @ 15V, 200A (Typ) | No | 18nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
| FZ800R33KL2CNOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | Module | 7 | no | 9.8kW | UPPER | UNSPECIFIED | 7 | 2 | Insulated Gate BIP Transistors | R-XUFM-X7 | 97nF | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 9800W | 3.3kV | 1700 ns | 3.65V | 1.5kA | Standard | 3300V | 1500A | 4250 ns | 20V | 5mA | 3.65V @ 15V, 800A | No | 97nF @ 25V | ||||||||||||||||||||||||||||||||||
| FZ1200R33KL2CNOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | Module | 9 | no | NO | UPPER | UNSPECIFIED | 9 | 3 | Insulated Gate BIP Transistors | R-XUFM-X9 | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 14500W | 14500W | 1700 ns | Standard | 3300V | 2300A | 4250 ns | 3.65 V | 20V | 5mA | 3.65V @ 15V, 1200A | No | 145nF @ 25V | |||||||||||||||||||||||||||||||||||||
| IRG7T75HF12A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | /files/infineontechnologies-irg7t75hf12a-datasheets-2639.pdf | POWIR® 34 Module | 450W | 10.4nF | Half Bridge | 450W | 1.2kV | 2.2V | 150A | Standard | 1200V | 1mA | 2.2V @ 15V, 75A | No | 10.4nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FP100R06KE3_B16 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-GP300TD60S | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgp300td60s-datasheets-2643.pdf | Dual INT-A-PAK (3 + 8) | 14 Weeks | 7 | EAR99 | 1.136kW | Dual | Half Bridge | 1136W | 600V | 1.45V | 580A | Standard | 150μA | 1.45V @ 15V, 300A | PT, Trench | No | ||||||||||||||||||||||||||||||||||||||||||||||
| IRG7U150HF12B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 62 Module | 900W | 14nF | Half Bridge | 900W | 1.2kV | 2V | 300A | Standard | 1200V | 1mA | 2V @ 15V, 150A | No | 14nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRG5W50HF06A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 34 Module | 260W | 2.6nF | Half Bridge | 260W | 600V | 2.7V | 75A | Standard | 1mA | 2.7V @ 15V, 50A | No | 2.6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG5K35HF12A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 34 Module | 280W | 3.4nF | Half Bridge | 280W | 1.2kV | 2.6V | 70A | Standard | 1200V | 1mA | 2.6V @ 15V, 35A | No | 3.4nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FF800R12KL4CNOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | 2013 | /files/infineontechnologies-ff800r12kl4cnosa1-datasheets-2650.pdf | 10 | no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 10 | 150°C | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X10 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1250A | 1200V | 460 ns | 1210 ns | |||||||||||||||||||||||||||||||||||||||||||
| BSM50GB170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/infineontechnologies-bsm50gb170dn2hosa1-datasheets-2656.pdf | Module | 7 | 14 Weeks | no | compliant | NO | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 500W | 500 ns | Standard | 1700V | 72A | 740 ns | 3.9V @ 15V, 50A | No | 8nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| IRG7U50HF12A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 34 Module | 310W | 6nF | Half Bridge | 310W | 1.2kV | 2V | 100A | Standard | 1200V | 1mA | 2V @ 15V, 50A | No | 6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NXH80T120L2Q0SG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/onsemiconductor-nxh80t120l2q0sg-datasheets-2659.pdf | Module | Lead Free | 50 Weeks | yes | 146W | 1.99nF | T-Type | 146W | 1.2kV | 2.8V | 65A | Standard | 1200V | 100μA | 2.8V @ 15V, 80A | Yes | 1.99nF @ 20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSM300GA170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/infineontechnologies-bsm300ga170dn2hosa1-datasheets-2624.pdf | Module | 2.5kW | Single | Module | Single | 2500W | 1.7kV | 3.9V | 440A | Standard | 1700V | 440A | 3mA | 3.9V @ 15V, 300A | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRG7U100HF12B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 62 Module | 580W | 12.5nF | Half Bridge | 580W | 1.2kV | 2V | 200A | Standard | 1200V | 1mA | 2V @ 15V, 100A | No | 12.5nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRG5U300SD12B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 62 Module | 2.17kW | 38nF | Single | 2170W | 1.2kV | 3.5V | 480A | Standard | 1200V | 3mA | 3.5V @ 15V, 300A | No | 38nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FZ1200R33KL2CB5NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | Module | 9 | EAR99 | NO | UPPER | UNSPECIFIED | 3 | R-XUFM-X9 | SILICON | COMPLEX | ISOLATED | POWER CONTROL | N-CHANNEL | 14500W | 1400 ns | Standard | 3300V | 2300A | 4250 ns | 5mA | 3.65V @ 15V, 1200A | No | 145nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
| VS-GP100TS60SFPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgp100ts60sfpbf-datasheets-2629.pdf | INT-A-Pak | 12 Weeks | 7 | EAR99 | 781W | Dual | Half Bridge | 781W | 600V | 1.34V | 337A | Standard | 150μA | 1.34V @ 15V, 100A | PT, Trench | No | ||||||||||||||||||||||||||||||||||||||||||||||
| FD800R33KL2CKB5NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~125°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 2013 | Module | 9.8kW | 97nF | Dual Brake Chopper | 9800W | 3.3kV | 3.65V | 1.5kA | Standard | 3300V | 1500A | 5mA | 3.65V @ 15V, 800A | No | 97nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRG7T150HF12B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2014 | POWIR® 62 Module | 910W | 20.2nF | Half Bridge | 910W | 1.2kV | 2.2V | 300A | Standard | 1200V | 2mA | 2.2V @ 15V, 150A | No | 20.2nF @ 25V |
