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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Thickness | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Screening Level | Memory Size | Memory Type | Frequency (Max) | Output Characteristics | Access Time | Clock Frequency | Address Bus Width | Organization | Memory Width | Memory Density | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDT71V424S10YI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Rail/Tube | 3 (168 Hours) | 85°C | -40°C | CMOS | 3.683mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v424s10yi-datasheets-1698.pdf | 23.495mm | 3.3V | 36 | 3.6V | 3V | 36 | Parallel | 4 Mb | 1 | not_compliant | 1 | 180mA | e0 | DUAL | J BEND | 225 | 3.3V | 36 | INDUSTRIAL | 30 | SRAMs | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 10 ns | 19b | 8 | 0.02A | 8b | Asynchronous | COMMON | 3V | ||||||||||||||||||||||||||||||||
| IDT70V7339S166DDI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 4 (72 Hours) | 85°C | -40°C | CMOS | 166MHz | SYNCHRONOUS | 1.6mm | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt70v7339s166ddi-datasheets-1688.pdf | TQFP | 20mm | 20mm | 144 | Parallel | 2 | 3A991.B.2.A | FLOW-THROUGH OR PIPELINED ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | QUAD | GULL WING | 225 | 3.3V | 0.5mm | 144 | INDUSTRIAL | 3.45V | 3.15V | 30 | SRAMs | 2.5/3.33.3V | 0.83mA | Not Qualified | S-PQFP-G144 | RAM, SRAM | 3-STATE | 512KX18 | 18 | 9437184 bit | 0.04A | 12 ns | COMMON | 3.15V | ||||||||||||||||||||||||||
| IDT71V67602S150BGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | CMOS | 150MHz | SYNCHRONOUS | 2.36mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v67602s150bgi8-datasheets-1683.pdf | BGA | 22mm | 14mm | 119 | Parallel | 3A991.B.2.A | PIPELINED ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | NOT SPECIFIED | 3.3V | 1.27mm | 119 | INDUSTRIAL | 3.465V | 3.135V | NOT SPECIFIED | SRAMs | 2.53.3V | 0.325mA | Not Qualified | RAM, SRAM | 3-STATE | 256KX36 | 36 | 9437184 bit | 0.05A | 3.8 ns | COMMON | 3.14V | |||||||||||||||||||||||||||
| 70V5388S100BG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 100MHz | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v5388s100bg-datasheets-1612.pdf | BGA | 27mm | 27mm | 3.3V | Contains Lead | 272 | 3.45V | 3.15V | 272 | Parallel | 1.1 Mb | no | 2mm | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 240mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 272 | INDUSTRIAL | 20 | SRAMs | 128kB | RAM, SDR, SRAM | 3-STATE | 10 ns | 16b | 0.015A | 18b | Synchronous | COMMON | ||||||||||||||||||||||||||
| IDT71V3577SA85BQ | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 70°C | 0°C | CMOS | SYNCHRONOUS | 1.2mm | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3577sa85bq-datasheets-1598.pdf | 15mm | 13mm | 165 | 165 | Parallel | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | 225 | 3.3V | 1mm | 165 | COMMERCIAL | 3.465V | 3.135V | 20 | SRAMs | 3.3V | 0.18mA | Not Qualified | RAM, SRAM | 3-STATE | 87MHz | 128KX36 | 36 | 4718592 bit | 0.03A | 8.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||
| THGBMHG9C4LBAIR | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 85°C | -25°C | CMOS | 52MHz | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshiba-thgbmhg9c4lbair-datasheets-1565.pdf | 1mm | 3.3V | 153 | 145 Weeks | 3.6V | 1.7V | 153 | MMC | 64 Gb | yes | 1 | BOTTOM | BALL | OTHER | 64GB | FLASH, NAND | 64GX8 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||
| 71V416L15BE | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 4 (72 Hours) | 70°C | 0°C | CMOS | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v416l15be-datasheets-1530.pdf | TFBGA | 9mm | 9mm | 3.3V | Contains Lead | 48 | 12 Weeks | 3.6V | 3V | 48 | Parallel | 4 Mb | no | 1.2mm | 1 | No | 1 | 160mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 0.75mm | 48 | COMMERCIAL | 20 | SRAMs | 512kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 15 ns | 18b | 16b | Asynchronous | COMMON | 3V | |||||||||||||||||||||||||||
| IDT71V3577SA85BGG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 70°C | 0°C | CMOS | SYNCHRONOUS | 2.36mm | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3577sa85bgg8-datasheets-1489.pdf | BGA | 22mm | 14mm | 119 | Parallel | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | YES | BOTTOM | BALL | 3.3V | 1.27mm | 119 | COMMERCIAL | 3.465V | 3.135V | Not Qualified | RAM, SRAM | 128KX36 | 36 | 4718592 bit | 8.5 ns | |||||||||||||||||||||||||||||||||||||||
| 7024S35GB | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | CMOS | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7024s35gb-datasheets-1486.pdf | 27.94mm | 27.94mm | 5V | Contains Lead | 84 | 10 Weeks | 5.5V | 4.5V | 84 | Parallel | 64 kb | no | 3.68mm | 2 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | No | 1 | 300mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 240 | 5V | 84 | MILITARY | 20 | SRAMs | 5V | 38535Q/M;38534H;883B | RAM, SRAM | 3-STATE | 35 ns | 24b | 4KX16 | 0.03A | 16b | Asynchronous | COMMON | |||||||||||||||||||||||||
| 71V124SA12PHGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v124sa12phgi-datasheets-1455.pdf | TSOP | 20.95mm | 10.16mm | 3.3V | Lead Free | 32 | 7 Weeks | 3.6V | 3V | 32 | Parallel | 1 Mb | yes | 1mm | 1 | No | 1 | 140mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 32 | INDUSTRIAL | 30 | SRAMs | 128kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 12 ns | 17b | 8b | Asynchronous | COMMON | 3V | ||||||||||||||||||||||||||||
| 70V631S12PRFI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 (168 Hours) | 85°C | -40°C | CMOS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v631s12prfi-datasheets-1456.pdf | TQFP | 20mm | 14mm | 3.3V | Contains Lead | 128 | 7 Weeks | 3.45V | 3.15V | 128 | Parallel | 4.5 Mb | no | 1.4mm | 2 | No | 1 | 515mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 0.5mm | 128 | INDUSTRIAL | SRAMs | 512kB | RAM, SDR, SRAM | 3-STATE | 12 ns | 36b | 0.015A | 18b | Asynchronous | COMMON | ||||||||||||||||||||||||||
| 71V321L55J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v321l55j8-datasheets-1457.pdf | PLCC | 19mm | 19mm | 3.3V | Contains Lead | 52 | 7 Weeks | 3.6V | 3V | 52 | Parallel | 16 kb | no | 3.63mm | 2 | EAR99 | BATTERY BACKUP;AUTOMATIC POWER DOWN | No | 1 | 85mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | COMMERCIAL | SRAMs | 2kB | RAM, SDR, SRAM | 3-STATE | 55 ns | 22b | 0.0015A | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||
| 71V3559S85BQG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 91MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v3559s85bqg-datasheets-1415.pdf | 15mm | 13mm | 3.3V | Lead Free | 165 | 11 Weeks | 3.465V | 3.135V | 165 | Parallel | 4.5 Mb | yes | 1.2mm | 1 | FLOW-THROUGH ARCHITECHTURE | No | 1 | 225mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 165 | COMMERCIAL | 30 | SRAMs | RAM, SRAM | 3-STATE | 8.5 ns | 18b | 0.04A | 18b | Synchronous | COMMON | ||||||||||||||||||||||||||||
| 71V124SA10PHGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 85°C | -40°C | CMOS | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v124sa10phgi8-datasheets-1414.pdf | TSOP | 20.95mm | 10.16mm | 3.3V | Lead Free | 32 | 7 Weeks | 3.6V | 3.15V | 32 | Parallel | 1 Mb | yes | 1mm | 1 | No | 1 | 150mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 32 | INDUSTRIAL | 30 | SRAMs | 128kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 10 ns | 17b | 8b | Asynchronous | COMMON | ||||||||||||||||||||||||||||
| 7009L20PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7009l20pf8-datasheets-1392.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 100 | 7 Weeks | 5.5V | 4.5V | 100 | Parallel | 1 Mb | no | 1.4mm | 2 | No | 1 | 300mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.5mm | 100 | COMMERCIAL | 20 | SRAMs | 5V | 128kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 34b | 0.003A | 8b | Asynchronous | COMMON | |||||||||||||||||||||||||
| 7008L20JI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 85°C | -40°C | CMOS | 4.57mm | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7008l20ji-datasheets-1366.pdf | PLCC | 29.21mm | 29.21mm | 5V | Contains Lead | 84 | 7 Weeks | 5.5V | 4.5V | 84 | Parallel | 512 kb | no | 3.63mm | 2 | No | 1 | 335mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | INDUSTRIAL | SRAMs | 5V | 64kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 32b | 64KX8 | 0.01A | 8b | Asynchronous | COMMON | |||||||||||||||||||||||||
| IDT71V3577SA85BGG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 70°C | 0°C | CMOS | SYNCHRONOUS | 2.36mm | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3577sa85bgg-datasheets-1360.pdf | BGA | 22mm | 14mm | 119 | Parallel | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | unknown | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | YES | BOTTOM | BALL | 3.3V | 1.27mm | 119 | COMMERCIAL | 3.465V | 3.135V | Not Qualified | RAM, SRAM | 128KX36 | 36 | 4718592 bit | 8.5 ns | |||||||||||||||||||||||||||||||||||||||
| 71342SA20J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71342sa20j8-datasheets-1359.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 32 kb | no | 3.63mm | 2 | EAR99 | SEMAPHORE; AUTOMATIC POWER-DOWN | No | 1 | 280mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 4kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 24b | 4KX8 | 0.015A | 8b | Asynchronous | COMMON | ||||||||||||||||||||||||
| 7134LA35P | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 70°C | 0°C | CMOS | 5.08mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7134la35p-datasheets-1297.pdf | PDIP | 61.7mm | 15.24mm | 5V | Contains Lead | 48 | 5.5V | 4.5V | 48 | Parallel | 32 kb | no | 3.8mm | 2 | EAR99 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | No | 1 | 210mA | e0 | Tin/Lead (Sn85Pb15) | DUAL | 245 | 5V | 48 | COMMERCIAL | SRAMs | 5V | 4kB | RAM, SDR, SRAM | 3-STATE | 35 ns | 24b | 4KX8 | 0.0015A | 8b | Asynchronous | COMMON | 2V | ||||||||||||||||||||||||
| 71V016SA20YGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 85°C | -40°C | CMOS | 3.683mm | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v016sa20ygi8-datasheets-1289.pdf | 28.6mm | 10.2mm | 3.3V | Lead Free | 44 | 12 Weeks | 3.6V | 3V | 44 | Parallel | 1 Mb | yes | 2.9mm | 1 | No | 1 | 120mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 44 | INDUSTRIAL | SRAMs | 128kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 20 ns | 16b | 16b | Asynchronous | COMMON | 3V | ||||||||||||||||||||||||||||
| IDT71V3577SA85BG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 70°C | 0°C | CMOS | SYNCHRONOUS | 2.36mm | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3577sa85bg8-datasheets-1274.pdf | BGA | 22mm | 14mm | 119 | Parallel | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | 3.3V | 1.27mm | 119 | COMMERCIAL | 3.465V | 3.135V | SRAMs | 3.3V | 0.18mA | Not Qualified | RAM, SRAM | 3-STATE | 87MHz | 128KX36 | 36 | 4718592 bit | 0.03A | 8.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||
| 71024S25TYGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71024s25tygi-datasheets-1275.pdf | 21.95mm | 7.6mm | 5V | Lead Free | 5.5V | 4.5V | 32 | Parallel | 1 Mb | yes | 2.67mm | 1 | No | e3 | Matte Tin (Sn) - annealed | 260 | 32 | 128kB | RAM, SDR, SRAM - Asynchronous | 25 ns | 17b | 8b | Asynchronous | |||||||||||||||||||||||||||||||||||||||||||
| 71V016SA20BFG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v016sa20bfg8-datasheets-1210.pdf | 7mm | 7mm | 3.3V | Lead Free | 48 | 12 Weeks | 3.6V | 3V | 48 | Parallel | 1 Mb | yes | 1.4mm | 1 | No | 1 | 120mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 0.75mm | 48 | COMMERCIAL | 30 | SRAMs | 128kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 20 ns | 16b | 16b | Asynchronous | COMMON | 3V | |||||||||||||||||||||||||||
| 71V67803S133BG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 133MHz | 2.36mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v67803s133bg8-datasheets-1191.pdf | BGA | 14mm | 22mm | 3.3V | Contains Lead | 119 | 7 Weeks | 3.465V | 3.135V | 119 | Parallel | 9 Mb | no | 2.15mm | 1 | PIPELINED ARCHITECTURE | No | 1 | 260mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 119 | COMMERCIAL | 20 | SRAMs | RAM, SRAM | 3-STATE | 4.2 ns | 19b | 0.05A | 18b | Synchronous | COMMON | |||||||||||||||||||||||||
| 7143SA35GB | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 125°C | -55°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7143sa35gb-datasheets-1176.pdf | 29.46mm | 29.46mm | 5V | Contains Lead | 5.5V | 4.5V | 68 | Parallel | 32 kb | 3.68mm | 2 | No | 325mA | RAM, SRAM | 35 ns | 22b | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||
| 7164L25YGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel | 3 (168 Hours) | 85°C | -40°C | CMOS | 3.556mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7164l25ygi8-datasheets-1172.pdf | 17.9mm | 7.6mm | 5V | Lead Free | 28 | 7 Weeks | 5.5V | 4.5V | 28 | Parallel | 64 kb | yes | 2.67mm | 1 | EAR99 | No | 1 | e3 | Matte Tin (Sn) - annealed | YES | DUAL | J BEND | 260 | 5V | 28 | INDUSTRIAL | SRAMs | 5V | 8kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 25 ns | 13b | 8KX8 | 0.00006A | COMMON | 2V | |||||||||||||||||||||||||||
| IDT71V3577SA85BG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 70°C | 0°C | CMOS | SYNCHRONOUS | 2.36mm | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3577sa85bg-datasheets-1149.pdf | BGA | 22mm | 14mm | 119 | Parallel | yes | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | YES | BOTTOM | BALL | 260 | 3.3V | 1.27mm | 119 | INDUSTRIAL | 3.465V | 3.135V | 30 | Not Qualified | RAM, SRAM | 128KX36 | 36 | 4718592 bit | 8.5 ns | ||||||||||||||||||||||||||||||||||||
| IDT71124S15YI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Rail/Tube | 3 (168 Hours) | 85°C | -40°C | CMOS | 3.683mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71124s15yi-datasheets-1123.pdf | 20.955mm | 5V | 32 | 5.5V | 4.5V | 32 | Parallel | 1 Mb | 1 | 1 | 155mA | e0 | DUAL | J BEND | 225 | 5V | 32 | INDUSTRIAL | 30 | SRAMs | 5V | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 15 ns | 17b | 8 | 8b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||
| IDT71V3577SA80BQI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | CMOS | SYNCHRONOUS | 1.2mm | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3577sa80bqi8-datasheets-1076.pdf | 15mm | 13mm | 165 | 165 | Parallel | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | 3.3V | 1mm | 165 | INDUSTRIAL | 3.465V | 3.135V | SRAMs | 3.3V | 0.21mA | Not Qualified | RAM, SRAM | 3-STATE | 100MHz | 128KX36 | 36 | 4718592 bit | 0.035A | 8 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||
| 71V3577S80PFG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 100MHz | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v3577s80pfg8-datasheets-1054.pdf | TQFP | 20mm | 14mm | 3.3V | Lead Free | 100 | 12 Weeks | 3.465V | 3.135V | 100 | Parallel | 4.5 Mb | yes | 1.4mm | 1 | FLOW-THROUGH ARCHITECTURE | No | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 0.65mm | 100 | COMMERCIAL | 30 | SRAMs | 512kB | RAM, SDR, SRAM | 100MHz | 3-STATE | 8 ns | 17b | 0.03A | 36b | Synchronous | COMMON |
