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MOSFET (Metal Oxide) N-Channel Tube 190m Ω @ 10A, 10V ±30V 1470pF @ 10V 27nC @ 10V TO-3P-3, SC-65-3
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK20J60U(F)
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 8247
- Description: MOSFET (Metal Oxide) N-Channel Tube 190m Ω @ 10A, 10V ±30V 1470pF @ 10V 27nC @ 10V TO-3P-3, SC-65-3 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | DTMOSII |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 190W Tc |
| Element Configuration | Single |
| Power Dissipation | 190W |
| Turn On Delay Time | 80 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1470pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Height | 19mm |
| Length | 40.5mm |
| Width | 4.8mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
