SUM110N04-2M3L-E3

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.3mOhm @ 30A, 10V ±20V 13600pF @ 25V 360nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB


  • Manufacturer: Vishay Siliconix
  • NO: 880-SUM110N04-2M3L-E3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 6610
  • Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.3mOhm @ 30A, 10V ±20V 13600pF @ 25V 360nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263 (D2Pak)
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series TrenchFET®
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.75W Ta 375W Tc
Element Configuration Single
Power Dissipation 3.75W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Rise Time 100ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 125 ns
Reverse Recovery Time 56 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Dual Supply Voltage 40V
Input Capacitance 13.6nF
Drain to Source Resistance 2.3mOhm
Rds On Max 2.3 mΩ
Nominal Vgs 3 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.