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ContactSQM100N10-10_GE3
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10.5mOhm @ 30A, 10V ±20V 8050pF @ 25V 185nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Vishay Siliconix
- NO: 880-SQM100N10-10_GE3
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 14202
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10.5mOhm @ 30A, 10V ±20V 8050pF @ 25V 185nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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- Payment:
In Stock
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| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8050pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 185nC @ 10V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 44 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.05nF |
| Rds On Max | 10.5 mΩ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Supplier Device Package | TO-263 (D2Pak) |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 375W Tc |
| Power Dissipation | 375W |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
