SIHP18N50C-E3

MOSFET (Metal Oxide) N-Channel Bulk 270m Ω @ 10A, 10V ±30V 2942pF @ 25V 76nC @ 10V 500V TO-220-3


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIHP18N50C-E3
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 2094
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 270m Ω @ 10A, 10V ±30V 2942pF @ 25V 76nC @ 10V 500V TO-220-3 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 270mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 223W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 223W
Case Connection DRAIN
Turn On Delay Time 80 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2942pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 500V
Nominal Vgs 5 V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SIHP18N50C-E3 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2942pF @ 25V.This device has a continuous drain current (ID) of [18A], which is its maximum continuous current.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 32 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 72A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 80 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.By using drive voltage (10V), this device helps reduce its overall power consumption.

SIHP18N50C-E3 Features


a continuous drain current (ID) of 18A
the turn-off delay time is 32 ns
based on its rated peak drain current 72A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)

SIHP18N50C-E3 Applications


There are a lot of Vishay Siliconix SIHP18N50C-E3 applications of single MOSFETs transistors.

  • Consumer Appliances
  • Motor control
  • LCD/LED/ PDP TV Lighting
  • Industrial Power Supplies
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Power Management Functions
  • Synchronous Rectification
  • Server power supplies
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

In Stock

Please send RFQ , we will respond immediately.