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ContactSIHFS11N50A-GE3
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 520m Ω @ 6.6A, 10V ±30V 1423pF @ 25V 52nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Vishay Siliconix
- NO: 880-SIHFS11N50A-GE3
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 12671
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 520m Ω @ 6.6A, 10V ±30V 1423pF @ 25V 52nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 170W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 520m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1423pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain Current-Max (Abs) (ID) | 11A |
| Drain-source On Resistance-Max | 0.52Ohm |
| Pulsed Drain Current-Max (IDM) | 44A |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 275 mJ |
| RoHS Status | Non-RoHS Compliant |
