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MOSFET (Metal Oxide) P-Channel Digi-Reel® 3.8m Ω @ 20A, 10V ±12V 5460pF @ 10V 180nC @ 10V 20V PowerPAK® 1212-8
- Manufacturer: Vishay Siliconix
- NO: 880-SI7623DN-T1-GE3
- Package: PowerPAK® 1212-8
- Datasheet:
- Stock: 7796
- Description: MOSFET (Metal Oxide) P-Channel Digi-Reel® 3.8m Ω @ 20A, 10V ±12V 5460pF @ 10V 180nC @ 10V 20V PowerPAK® 1212-8 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2013 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | S-PDSO-C5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.7W Ta 52W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.7W |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5460pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Continuous Drain Current (ID) | -35A |
| Threshold Voltage | -400mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Avalanche Energy Rating (Eas) | 20 mJ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SI7623DN-T1-GE3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 20 mJ.A device's maximum input capacitance is 5460pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device has a continuous drain current (ID) of [-35A], which is its maximum continuous current.With a drain-source breakdown voltage of -20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -20V.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.In this case, the threshold voltage of the transistor is -400mV, which means that it will not activate any of its functions when its threshold voltage reaches -400mV.Operating this transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 10V).
SI7623DN-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of -35A
a drain-to-source breakdown voltage of -20V voltage
a threshold voltage of -400mV
a 20V drain to source voltage (Vdss)
SI7623DN-T1-GE3 Applications
There are a lot of Vishay Siliconix SI7623DN-T1-GE3 applications of single MOSFETs transistors.
- Telecom 1 Sever Power Supplies
- Uninterruptible Power Supply
- LCD/LED TV
- Server power supplies
- Industrial Power Supplies
- DC/DC converters
- Motor drives and Uninterruptible Power Supplies
- Lighting
- General Purpose Interfacing Switch
- Battery Protection Circuit
