SI7370ADP-T1-GE3

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10m Ω @ 12A, 10V ±20V 2850pF @ 30V 70nC @ 10V PowerPAK® SO-8


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI7370ADP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: pdf
  • Stock: 2907
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10m Ω @ 12A, 10V ±20V 2850pF @ 30V 70nC @ 10V PowerPAK® SO-8 (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 30V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 125 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Resistance 10mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Reach Compliance Code unknown
JESD-30 Code R-PDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5.2W Ta 69.4W Tc
Operating Mode ENHANCEMENT MODE

In Stock

Please send RFQ , we will respond immediately.