SI1450DH-T1-E3

MOSFET N-CH 8V 4.53A SC70-6


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI1450DH-T1-E3
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: pdf
  • Stock: 5239
  • Description: MOSFET N-CH 8V 4.53A SC70-6(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Supplier Device Package SC-70-6 (SOT-363)
Weight 7.512624mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 58mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.56W Ta 2.78W Tc
Element Configuration Single
Power Dissipation 1.56W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 47mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 535pF @ 4V
Current - Continuous Drain (Id) @ 25°C 4.53A Ta 6.04A Tc
Gate Charge (Qg) (Max) @ Vgs 7.05nC @ 5V
Rise Time 73ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 73 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 5V
Dual Supply Voltage 8V
Input Capacitance 535pF
Drain to Source Resistance 47mOhm
Rds On Max 47 mΩ
Nominal Vgs 1 V
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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