MMBT100A

MMBT100A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from MICROSS/On Semiconductor stock available at Feilidi


  • Manufacturer: MICROSS/On Semiconductor
  • NO: 598-MMBT100A
  • Package: SOT-23
  • Datasheet: pdf
  • Stock: 7444
  • Description: MMBT100A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from MICROSS/On Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case SOT-23
Number of Pins 3
Weight 30mg
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 45V
Max Power Dissipation 350mW
Current Rating 500mA
Frequency 250MHz
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 350mW
Gain Bandwidth Product 250MHz
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 300
RoHS Status RoHS Compliant
Lead Free Lead Free

MMBT100A Overview


This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Keeping the emitter base voltage at 6V can result in a high level of efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 250MHz.The maximum collector current is 500mA volts.

MMBT100A Features


a collector emitter saturation voltage of 400mV
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 250MHz

MMBT100A Applications


There are a lot of MICROSS/On Semiconductor MMBT100A applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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