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ContactIXTY08N100D2
IXTY08N100D2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from IXYS stock available at Feilidi
- Manufacturer: IXYS / Littelfuse
- NO: 415-IXTY08N100D2
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6302
- Description: IXTY08N100D2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from IXYS stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 19 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Pure Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 60W Tc |
| Power Dissipation | 60W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 21 Ω @ 400mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 800mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 14.6nC @ 5V |
| Drain to Source Voltage (Vdss) | 1000V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 800mA |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| FET Feature | Depletion Mode |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IXTY08N100D2 Description
IXTY08N100D2 provided by IXYS belongs to the family of N-channel MOSFET which is a field effect transistor that can be widely used in analog circuits and digital circuits. Its characteristic is that the gate voltage is used to control the drain current. Based on its specific characteristics, the IXTY08N100D2 MOSFET is well-suited for audio amplifiers, start-up circuits, protection circuits, and more. It is supplied in the TO-252-3 package for space-constrained applications.
IXTY08N100D2 Features
Normally ON mode
Easy to mount
Space savings
High power density
Temperature range: -55° to +150°C
IXTY08N100D2 Applications
Audio amplifiers
Start-up circuits
Protection circuits
Ramp generators
Current regulators
Active loads
