IXTV200N10TS

MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 50A, 10V ±30V 9400pF @ 25V 152nC @ 10V PLUS-220SMD


  • Manufacturer: IXYS
  • NO: 415-IXTV200N10TS
  • Package: PLUS-220SMD
  • Datasheet: pdf
  • Stock: 8799
  • Description: MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 50A, 10V ±30V 9400pF @ 25V 152nC @ 10V PLUS-220SMD (Kg)

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  • Delivery: Delivery
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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PLUS-220SMD
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMV™
Published 2008
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 550W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 550W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 200A
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status RoHS Compliant

In Stock

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