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ContactIXTU01N100D
MOSFET (Metal Oxide) N-Channel Tube 80 Ω @ 50mA, 0V ±20V 120pF @ 25V 1000V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: IXYS
- NO: 415-IXTU01N100D
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 4799
- Description: MOSFET (Metal Oxide) N-Channel Tube 80 Ω @ 50mA, 0V ±20V 120pF @ 25V 1000V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
- Delivery:
- Payment:
In Stock
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 24 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.1W Ta 25W Tc |
| Element Configuration | Single |
| Power Dissipation | 1.1W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80 Ω @ 50mA, 0V |
| Vgs(th) (Max) @ Id | 5V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 100mA Tc |
| Rise Time | 6ns |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 0V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 100mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.1A |
| Drain-source On Resistance-Max | 110Ohm |
| Drain to Source Breakdown Voltage | 1kV |
| Pulsed Drain Current-Max (IDM) | 0.4A |
| FET Feature | Depletion Mode |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
